FFSP0865A

FFSP0865A Silicon Carbide Schottky Diode 650 V, 8 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 TO−220−2LD CASE 340BB MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSP 0865A $Y &Z &3 &K FFSP0865A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 September, 2019 − Rev. 2 1 Publication Order Number: FFSP0865A/D FFSP0865A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 49 mJ Continuous Rectified Forward Current @ TC < 155°C 8 A Symbol VRRM EAS IF IF, Max Continuous Rectified Forward Current @ TC < 135°C 13 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 750 A TC = 150°C, 10 ms 730 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 49 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 34 A Ptot Power Dissipation TC = 25°C 98 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 16 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.53 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 8 A, TC = 25°C − 1.50 1.75 V IF = 8 A, TC = 125°C − 1.6 2.0 IF = 8 A, TC = 175°C − 1.72 2.40 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 27 − nC Total Capacitance VR = 1 V, f = 100 kHz − 463 − pF VR = 200 V, f = 100 kHz − 48 − VR = 400 V, f = 100 kHz − 38 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSP0865A FFSP0865A TO−220−2LD (Pb-Free / Halogen Free) Tube 50 Units www.onsemi.com 2 FFSP0865A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) IR, REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 8 6 4 TJ = 175 oC 2 TJ = 25 oC TJ = 125 oC TJ = 75 oC 0 0.0 0.5 TJ = −55 oC 1.0 1.5 2.0 10 −5 10 −6 10 −7 10 −8 10 −9 T J = 175 oC T J = 75 o C T J = 25 o C 200 300 100 D = 0.2 60 D = 0.3 40 D = 0.5 0 25 D=1 50 75 100 125 150 60 40 20 0 25 175 50 75 100 125 150 175 o T C , CASE TEMPERATURE ( C) T C , CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 650 80 o 20 10 0 600 100 D = 0.1 20 D = 0.7 500 Figure 2. Reverse Characteristics PTOT , POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) Figure 1. Forward Characteristics 80 400 T J = −55 oC V R, REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) 120 T J = 125 o C 0 100 200 300 400 500 100 10 0.1 600 650 V R, REVERSE VOLTAGE (V) 1 10 100 V R, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSP0865A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY (m J) 10 8 6 4 2 0 0 100 200 300 400 500 600 650 V R , REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy NORMALIZED THERMAL IMPEDANCE, Z q JC 2 1 D=0.5 DUTY CIRCLE−DESCENDING ORDER 0.2 0.1 PDM 0.05 0.02 0.01 0.1 t1 t2 NOTES: 0.01 0.001 0.0005 −6 10 ZqJC(t) = r(t) x RqJC RqJC = 1.53 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −5 10 −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 1 FFSP0865A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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