FFSP4065BDN-F085
Product Preview
Silicon Carbide Schottky
Diode, 650 V, 40 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
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1
Anode
3
Anode
Schottky Diode
Features
•
•
•
•
•
•
•
•
2
Cathode/
Case
Max Junction Temperature 175°C
Avalanche Rated 94 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
TO−220−3LD
CASE 340AT
MARKING DIAGRAM
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
$Y&Z&3&K
FFSP
4065BDN
$Y
&Z
&3
&K
FFSP4065BDN
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
March, 2019 − Rev. P1
1
Publication Order Number:
FFSP4065BDN−F085/D
FFSP4065BDN−F085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
EAS
Value
Unit
650
V
94*
mJ
20*/40**
A
TC = 25°C, 10 ms
882
A
TC = 150°C, 10 ms
798
A
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
IF
(Note 1)
Continuous Rectified Forward Current @ TC < 136°C
IF, Max
Non-Repetitive Peak Forward Surge Current
IF,SM
Non-Repetitive Forward Surge Current
TC = 25°C
Half-Sine Pulse, tp = 8.3 ms
84
A
Ptot
Power Dissipation
TC = 25°C
95
W
TC = 150°C
16
W
−55 to +175
°C
60
Ncm
TJ, TSTG
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
* Per Leg, ** Per Device
1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Thermal Resistance, Junction to Case, Max
Value
Unit
1.6*/0.8**
°C/W
* Per Leg, ** Per Device
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted (per leg))
Symbol
VF
IR
QC
C
Parameter
Min
Typ
Max
Unit
IF = 20 A, TC = 25°C
−
1.38
1.7
V
IF = 20 A, TC = 125°C
−
1.6
2.0
IF = 20 A, TC = 175°C
−
1.72
2.4
VR = 650 V, TC = 25°C
−
0.5
40
VR = 650 V, TC = 125°C
−
1
80
VR = 650 V, TC = 175°C
−
2
160
Total Capacitive Charge
V = 400 V
−
51
−
nC
Total Capacitance
VR = 1 V, f = 100 kHz
−
866
−
pF
VR = 300 V, f = 100 kHz
−
80
−
VR = 600 V, f = 100 kHz
−
70
−
Forward Voltage
Reverse Current
Test Condition
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSP4065BDN−F085
FFSP4065BDN
TO−220−3LD
(Pb−Free / Halogen Free)
50 Units / Tube
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2
FFSP4065BDN−F085
TYPICAL CHARACTERISTICS
−5
40
10
TJ = −55o C
TJ = 25o C
30
TJ = 75oC
IR, REVERSE CURRENT (A)
IF , FORWARD CURRENT (A)
(TJ = 25°C unless otherwise noted (per leg))
TJ = 175o C
TJ = 125o C
20
10
0
−6
10
TJ = 125oC
TJ = 75oC
TJ = 25oC
TJ = −55 oC
−8
10
−9
0
0.5
1.0
1.5
2.0
2.5
V F , FORWARD VOLTAGE (V)
10
3.0
Figure 1. Forward Characteristics
200
D = 0.1
100
D = 0.2
D = 0.3
D = 0.5
50
D=1
D = 0.7
25
50
75
100
125
150
90
60
30
0
175
25
o
50
75
100
125
150
175
TC, CASE TEMPERATURE ( C)
o
TC, CASE TEMPERATURE ( C)
Figure 3. Current Derating
Figure 4. Power Derating
90
2000
1000
CAPACITANCE (pF)
Q C , CAPACITIVE CHARGE (nC)
200
300
400
500 600 650
V R , REVERSE VOLTAGE (V)
120
150
0
100
Figure 2. Reverse Characteristics
P TOT , POWER DISSIPATION (W)
IF , PEAK FORWARD CURRENT (A)
TJ = 175oC
−7
10
60
30
0
0
100
200
300
400
500
100
50
600 650
V R , REVERSE VOLTAGE (V)
0.1
1
10
100
650
V R , REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP4065BDN−F085
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
E C, CAPACITIVE ENERGY ( mJ)
20
15
10
5
0
0
100
200
300
400
500
600 650
V R, REVERSE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
D=0.2
D=0.1
D=0.05
0.01
0.001
10 −6
t1
t2
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 1.6 oC/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t 1 / t 2
D=0.02
D=0.01
SINGLE PULSE
10 −5
10 −4
10 −3
10 −2
1
10 −1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
Q1
CURRENT
SENSE
DUT
VAVL
R
+
VDD
IL
IL
I V
VDD
−
t0
t1
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
t2
t
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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