FGAF30S65AQ

Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. Features • • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance Fast Switching Tighten Parameter Distribution IGBT with Monolithic Reverse Conducting Diode This Device is Pb−Free and is RoHS Compliant www.onsemi.com 30 A, 650 V VCE(sat) = 1.4 V (Typ.) C G E Typical Applications • PFC, Welder MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 ±30 V IC 60 30 A Pulsed Collector Current (Note 1) ILM 90 A Pulsed Collector Current (Note 2) ICM 90 A IF 30 15 A Pulsed Diode Maximum Forward Current IFM 90 A Maximum Power Dissipation@TC = 25°C @ TC = 100°C PD 83 42 W Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 °C TL 260 °C Collector Current Diode Forward Current @TC = 25°C @TC = 100°C @TC = 25°C @ TC = 100°C Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 13 W, Inductive Load, 100% Tested 2. Repetitive rating: pulse width limited by max. Junction temperature © Semiconductor Components Industries, LLC, 2019 June, 2020 − Rev. 2 1 TO−3PF CASE 340AH MARKING DIAGRAM &Y FGAF30S65 AQ&E&3&K G C E &Y = ON Semiconductor Logo &E = Designate space on marking &3 = 3−Digit Data Code &K = 2−Digit Lot Traceability Code FGAF30S65AQ = Specific Device Code ORDERING INFORMATION Device Package Shipping FGAF30S65AQ TO−3PF−3L 30 Units / Rail Publication Order Number: FGAF30S65AQ/D FGAF30S65AQ Table 1. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Case, for IGBT Parameter RqJC 1.8 _C/W Thermal Resistance, Junction−to−Case, for Diode RqJC 2.3 _C/W Thermal Resistance, Junction−to−Ambient RqJA 40 _C/W Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES / DTJ − 0.5 − V/°C Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 30 mA VGE(th) 2.6 5.3 6.6 V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 175°C VCE(sat) − − 1.4 1.7 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 1959 − pF Output capacitance Coes − 29 − Reverse transfer capacitance Cres − 8 − Qg − 58 − Gate to emitter charge Qge − 13 − Gate to collector charge Qgc − 17 − td(on) − 17.6 − OFF CHARACTERISTIC ON CHARACTERISTIC Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTIC Input capacitance Gate charge total VCE = 400 V, IC = 30 A, VGE = 15 V nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time TJ = 25°C VCC = 400 V, IC = 7.5 A Rg = 13 W VGE = 15 V Inductive Load tr − 6 − td(off) − 97 − tf − 44 − Turn−on switching loss Eon − 295 − Turn−off switching loss Eoff − 82 − Total switching loss Ets − 377 − td(on) − 18 − tr − 11 − td(off) − 92 − tf − 24 − Turn−on switching loss Eon − 515 − Turn−off switching loss Eoff − 140 − Total switching loss Ets − 655 − Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 15 A Rg = 13 W VGE = 15 V Inductive Load www.onsemi.com 2 ns mJ ns mJ FGAF30S65AQ Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit TJ = 175°C VCC = 400 V, IC = 7.5 A Rg = 13 W VGE = 15 V Inductive Load td(on) − 17.6 − ns tr − 6.4 − td(off) − 110 − tf − 56 − Turn−on switching loss Eon − 442 − Turn−off switching loss Eoff − 145 − Total switching loss Ets − 587 − td(on) − 18 − tr − 12 − td(off) − 104 − tf − 48 − Turn−on switching loss Eon − 741 − Turn−off switching loss Eoff − 274 − Total switching loss Ets − 1015 − IF = 15 A IF = 15 A, TJ = 175°C VF − − 1.3 1.3 1.6 − V IF = 15 A, dlF/dt = 200 A/ms Erec − 239 − mJ Diode Reverse Recovery Time IF = 15 A, dlF/dt = 200 A/ms IF =15 A, dlF/dt = 200 A/ms, TJ = 175°C Trr − 267 347 − nS Diode Reverse Recovery Charge IF = 15 A, dlF/dt = 200 A/ms IF = 15 A, dlF/dt = 200 A/ms, TJ = 175°C Qrr − 1135 1873 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TJ = 175°C VCC = 400 V, IC = 15 A Rg = 13 W VGE = 15 V Inductive Load mJ ns mJ DIODE CHARACTERISTIC Forward Voltage Reverse Recovery Energy Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGAF30S65AQ TYPICAL CHARACTERISTICS 15 V 90 120 10 V IC, COLLECTOR CURRENT (A) 20 V 12 V VGE = 8 V 60 30 0 TJ = 25°C 0 1 2 3 4 5 TJ = 175°C 80 40 1 2 3 4 5 TJ = 175°C 0 1 2 3 4 5 3.0 Common Emitter VGE = 15 V 2.5 IC = 60 A 2.0 IC = 30 A 1.5 IC = 15 A 1.0 −100 −50 0 50 100 150 200 VCE, COLLECTOR−EMITTER VOLTAGE (V) TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 30 Figure 2. Typical Output Characteristics TJ = 25°C Common Emitter TJ = 25°C 16 12 IC = 60 A 8 4 IC = 30 A IC = 15 A 0 VGE = 8 V 60 Figure 1. Typical Output Characteristics 120 0 90 VCE, COLLECTOR−EMITTER VOLTAGE (V) Common Emitter VGE = 15 V 0 15 V 12 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 20 V 10 V 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 120 4 8 12 16 20 20 Common Emitter TJ = 175°C 16 12 8 IC = 60 A IC = 15 A 4 0 IC = 30 A 0 4 8 12 16 VGE, GATE−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 FGAF30S65AQ TYPICAL CHARACTERISTICS 1K 100 Coes 10 Cres 1 10 VCC = 400 V VCC = 200 V 9 VCC = 300 V 6 3 0 0 15 30 45 60 75 Figure 7. Capacitance Characteristics Figure 8. Gate Charge 90 1000 tr, TJ = 25°C td(off), TJ = 175°C tr, TJ = 175°C td(on), TJ = 25°C td(on), TJ = 175°C 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 30 A 0 5000 10 20 30 40 50 tf, TJ = 25°C 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 30 A tf, TJ = 175°C 10 20 30 40 50 Rg, GATE RESISTANCE (W) Rg, GATE RESISTANCE (W) Figure 9. Turn−On Characteristics vs. Gate Resistance Figure 10. Turn−Off Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 400 V, VGE = 15 V IC = 30 A Eon, TJ = 175°C 1000 Eoff, TJ = 175°C Eoff, TJ = 25°C 0 td(off), TJ = 25°C 100 1 Eon, TJ = 25°C 100 12 Qg, GATE CHARGE (nC) 100 1 Common Emitter TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 200 SWITCHING TIME (ns) 30 SWITCHING TIME (ns) 1 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) Cies SWITCHING TIME (ns) CAPACITANCE (pF) 15 Common Emitter VGE = 0 V, f = 1 MHz TJ = 25°C 10K 10 20 30 40 tr, TJ = 175°C 100 tr, TJ = 25°C td(on), TJ = 25°C 10 td(on), TJ = 175°C 1 50 Common Emitter VCC = 400 V, VGE = 15 V RG = 13 W 0 10 20 30 40 50 60 70 80 Rg, GATE RESISTANCE (W) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 90 FGAF30S65AQ TYPICAL CHARACTERISTICS td(off), TJ = 175°C 100 td(off), TJ = 25°C tf, TJ = 25°C 10 tf, TJ = 175°C 0 IC, COLLECTOR CURRENT (A) 100 10 20 Common Emitter VCC = 400 V, VGE = 15 V RG = 13 W 30 40 80 20 1K 10K 100K 20 30 40 50 60 70 80 10 100 ms 1 ms 1 TJ = 25°C TJ = 175°C Single Pulse 1 10 ms DC 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics (FBSOA) TJ = 175°C 10 1 2 3 4 90 10 ms SWITCHING FREQUENCY (fHz) TJ = 25°C 0 10 100 0.1 1M TJ = 75°C 1 0 300 Square Wave VCC = 400 V, VGE = 15/0 V TJ ≤ 175°C, D = 0.5 V RG = 13 W TJ = 100°C 80 Common Emitter VCC = 400 V, VGE = 15 V RG = 13 W Figure 14. Switching Loss vs. Collector Current 30 10 0 Eoff, TJ = 25°C 100 10 90 60 40 Eoff, TJ = 175°C Figure 13. Turn−Off Characteristics vs. Collector Current TJ = 75°C 50 Eon, TJ = 175°C 1K IC, COLLECTOR CURRENT (A) 80 70 70 Eon, TJ = 25°C IC, COLLECTOR CURRENT (A) TJ = 25°C 90 60 50 IC, COLLECTOR CURRENT (A) 1 IF, FORWARD CURRENT (A) SWITCHING LOSS (mJ) 10K Irr, REVERSE RECOVERY CURRENT (A) SWITCHING TIME (ns) 1000 5 16 14 12 TJ = 175°C, di/dt = 200 A/ms 10 TJ = 25°C, di/dt = 200 A/ms 8 TJ = 175°C, di/dt = 100 A/ms 6 TJ = 25°C, di/dt = 100 A/ms 4 2 0 0 10 20 30 VF, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 40 FGAF30S65AQ 600 TJ = 175°C, di/dt = 100 A/ms 500 TJ = 175°C, di/dt = 200 A/ms 400 300 TJ = 25°C, di/dt = 200 A/ms 200 100 0 TJ = 25°C, di/dt = 100 A/ms 0 10 20 30 40 Qrr, STORED RECOVERY CHARGE (nC) trr, REVERSE RECOVERY TIME (ns) TYPICAL CHARACTERISTICS 2500 2000 TJ = 175°C, di/dt = 200 A/ms TJ = 175°C, di/dt = 100 A/ms 1500 1000 TJ = 25°C, di/dt = 100 A/ms 500 TJ = 25°C, di/dt = 200 A/ms 0 0 10 20 30 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) Figure 19. Reverse Recovery Time Figure 20. Stored Charge 40 THERMAL RESPONSE (ZqJC) 2 1 50% Duty Cycle 20% 10% 5% 0.1 2% P DM 1% 0.01 Notes: Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 t1 t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 RECTANGULAR PULSE DURATION (sec) Figure 21. Transient Thermal Impedance of IGBT THERMAL RESPONSE (ZqJC) 5 50% Duty Cycle 1 20% 10% 5% 2% 0.1 1% P DM Single Pulse Notes: Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 t1 t2 0.01 0.00001 0.0001 0.001 0.01 0.1 RECTANGULAR PULSE DURATION (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3PF−3L CASE 340AH ISSUE A DATE 09 JAN 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES). 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA­ SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20. SEATING PLANE P E A A1 Q H1 D D2 L2 D3 L1 NOTE 3 L 1 3X 2 3 b2 3X b b3 DESCRIPTION: MILLIMETERS MIN MAX 5.30 5.70 2.80 3.20 3.10 3.50 1.80 2.20 0.65 0.95 1.90 2.15 3.80 4.20 0.80 1.10 24.30 24.70 24.70 25.30 3.30 3.70 15.30 15.70 5.35 5.55 9.80 10.20 19.10 19.50 4.80 5.20 1.90 2.20 3.40 3.80 4.30 4.70 c A3 A2 e DOCUMENT NUMBER: DIM A A1 A2 A3 b b2 b3 c D D2 D3 E e H1 L L1 L2 P Q 98AON79755E TO−3PF−3L Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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