FGD2736G3-F085V

FGD2736G3-F085V EcoSPARK 3 Ignition IGBT 270 mJ, 360 V, N−Channel Ignition IGBT Features • • • • • SCIS Energy = 270 mJ at TJ = 25°C Logic Level Gate Drive Low Saturation Voltage RoHS Compliant AEC−Q101 Qualified and PPAP Capable www.onsemi.com COLLECTOR Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications R1 GATE R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units BVCER Collector−to−Emitter Breakdown Voltage (IC = 1 mA) 360 V BVECS Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ISCIS = 13.4 A, L = 3.0 mHy, RGE = 1 KW TC = 25°C (Note 1) 270 mJ ESCIS150 ISCIS = 10.8 A, L = 3.0 mHy, RGE = 1 KW TC = 150°C (Note 2) 170 mJ Collector Current Continuous at VGE = 5.0 V, TC = 25°C 37.5 A IC110 Collector Current Continuous at VGE = 5.0 V, TC = 110°C 24.3 A VGEM Gate−to−Emitter Voltage Continuous ±10 V Power Dissipation Total, TC = 25°C 150 W Power Dissipation Derating, TC > 25°C 1.1 W/°C −40 to +175 °C TJ/TSTG Operating Junction and Storage Temperature Range 4 1 2 IC25 PD EMITTER 3 DPAK (SINGLE GAUGE) CASE 369C MARKING DIAGRAM TL Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 300 °C TPKG Reflow soldering according to JESD020C 260 °C ESD HBM − Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM − Electrostatic Discharge Voltage at 1 W 2 kV AYWW FGD 2736D A = Assembly Location Y = Year WW = Work Week FGD2736D = Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 270 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 13.4 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.8 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. © Semiconductor Components Industries, LLC, 2020 April, 2020 − Rev. 1 1 Publication Order Number: FGD2736G3−F085V/D FGD2736G3−F085V THERMAL RESISTANCE RATINGS Characteristic Junction−to−Case – Steady State (Drain) Symbol Max Units RqJC 1.1 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVCER Collector−to−Emitter Breakdown Voltage ICE = 2 mA, VGE = 0 V, RGE = 1 kW, TJ = −40 to 150°C 330 − 390 V BVCES Collector−to−Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 350 − 410 V BVECS Emitter−to−Collector Breakdown Voltage ICE = −75 mA, VGE = 0 V, TJ = 25°C 28 − − V BVGES Gate−to−Emitter Breakdown Voltage IGES = ±2 mA ±11 ±14 − V ICER Collector−to−Emitter Leakage Current VCE = 175 V RGE = 1 kW TJ = 25°C − − 25 mA TJ = 150°C − − 1 mA VEC = 24 V TJ = 25°C − − 1 mA TJ = 150°C − − 40 − 110 − W 10K − 30K W IECS Emitter−to−Collector Leakage Current R1 Series Gate Resistance R2 Gate−to−Emitter Resistance ON CHARACTERISTICS VCE(SAT) Collector−to−Emitter Saturation Voltage ICE = 6 A, VGE = 4 V, TJ = 25°C − 1.25 1.35 V VCE(SAT) Collector−to−Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V, TJ = 25°C − 1.45 1.65 V VCE(SAT) Collector−to−Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V, TJ = 150°C − 1.60 1.80 V − 18 − nC TJ = 25°C 1.3 1.6 2.2 V TJ = 150°C 0.75 1.1 1.8 VCE = 12 V, ICE = 10 A − 3.0 − V VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 470 W, TJ = 25°C − 0.9 4 ms − 3.0 7 VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 470 W, ICE = 6.5 A, TJ = 25°C − 4.4 15 − 1.9 15 DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V VGE(TH) Gate−to−Emitter Threshold Voltage ICE = 1 mA VCE = VGE VGEP Gate−to−Emitter Plateau Voltage SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND DEVICE ORDERING INFORMATION Device Marking FGD2736G3 Device FGD2736G3−F085V Package DPAK (Pb−Free) Reel Diameter Tape Width Qty† 330 mm 16 mm 2500 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FGD2736G3−F085V TYPICAL CHARACTERISTICS Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp Figure 2. Self Clamped Inductive Switching Current vs. Inductance Figure 3. Collector−to−Emitter On−State Voltage vs. Junction Temperature Figure 4. Collector−to−Emitter On−State Voltage vs. Junction Temperature Figure 5. Collector−to−Emitter On−State Voltage vs. Collector Current Figure 6. Collector−to−Emitter On−State Voltage vs. Collector Current www.onsemi.com 3 FGD2736G3−F085V TYPICAL CHARACTERISTICS Figure 7. Collector−to−Emitter On−State Voltage vs. Collector Current Figure 8. Transfer Characteristics Figure 9. Current Derating Figure 10. Gate Charge Figure 11. Threshold Voltage vs. Junction Temperature Figure 12. Leakage Current vs. Junction Temperature www.onsemi.com 4 FGD2736G3−F085V TYPICAL CHARACTERISTICS Figure 13. Switching Time vs. Junction Temperature Figure 14. Capacitance vs. Collector−to−Emitter Voltage Figure 15. Break Down Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction−to−Case www.onsemi.com 5 FGD2736G3−F085V TEST CIRCUITS AND WAVEFORMS Figure 18. tON and tOFF Switching Test Circuit Figure 17. Inductive Switching Test Circuit Figure 19. Energy Test Circuit Figure 20. Energy Waveforms ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 B c2 4 L3 Z D 1 L4 C A 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative