FGD3325G2-F085

EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Features Applications o „ SCIS Energy = 330mJ at TJ = 25 C „ Automotive lgnition Coil Driver Circuits „ Logic Level Gate Drive „ Coil On Plug Applications „ Qualified to AEC Q101 „ RoHS Compliant Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: FGD3325G2-F085/D FGD3325G2-F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2-F085 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 250 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 ISCIS = 14.8A, L = 3.0mHy, RGE = 1KΩ TC = 25°C 330 mJ TC = 150°C 195 mJ ESCIS150 ISCIS = 11.4A, L = 3.0mHy, RGE = 1KΩ IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C 41 A IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C 25 A VGEM Gate to Emitter Voltage Continuous PD Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC ±10 V TC = 25°C 150 W TC > 25°C 1.0 W/oC TJ Operating Junction Temperature Range -55 to +175 o C TSTG Storage Junction Temperature Range -55 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Reflow soldering according to JESD020C 260 o C ESD HBM-Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV CDM-Electrostatic Discharge Voltage at 1Ω 2 kV Package Marking and Ordering Information Device Marking FGD3325G2 Device FGD3325G2-F085 Package TO252 Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 225 - 275 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 240 - 290 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCE = 175V, RGE = 1KΩ - - 25 μA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, - - 1 - - 40 R1 Series Gate Resistance - 120 - Ω R2 Gate to Emitter Resistance 10K - 30K Ω ICER TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, www.onsemi.com 2 TJ = 25oC TJ = 150oC TJ = 150oC - 1.15 1.25 V - 1.35 1.50 V - 1.68 1.85 V FGD3325G2-F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ - 21 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V - nC 1.3 1.5 2.2 0.75 1.1 1.8 VCE = 12V, ICE = 10A - 2.7 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 0.8 4 μs - 1.2 7 μs - 5.1 15 μs - 2.2 15 μs - - 1 oC/W VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25oC TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 190V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, Thermal Characteristics RθJC Thermal Resistance Junction to Case www.onsemi.com 3 FGD3325G2-F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 100 SCIS Curves valid for Vclamp Voltages of