FGD3245G2-F085C

FGD3245G2-F085C EcoSPARK 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT Features • • • • • SCIS Energy = 320 mJ at TJ = 25°C Logic Level Gate Drive Low Saturation Voltage AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com COLLECTOR Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application R1 GATE R2 EMITTER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 450 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ISCIS = 14.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) 320 mJ 180 mJ ESCIS150 ISCIS = 10.9 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C 23 A IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C 23 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total, TC = 25°C 150 W Power Dissipation Derating, TC > 25°C 1.1 W/°C −55 to +175 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 300 °C TPKG Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM−Electrostatic Discharge Voltage at 1 W 2 kV TJ, TSTG Operating Junction and Storage Temperature TL DPAK3 CASE 369AS MARKING DIAGRAM AYWW XXX XXXXXG A Y WW XXXX G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.9 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. © Semiconductor Components Industries, LLC, 2016 January, 2019 − Rev. 0 1 Publication Order Number: FGD3245G2−F085C//D FGD3245G2−F085C THERMAL RESISTANCE RATINGS Characteristic Symbol Max Units RqJC 0.9 °C/W Junction−to−Case – Steady State (Drain) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage ICE = 2 mA, VGE = 0 V, RGE = 1 kW, TJ = −40 to 150°C 420 − 480 V BVCES Collector to Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 440 − 500 V BVECS Emitter to Collector Breakdown Voltage ICE = −75 mA, VGE = 0 V, TJ = 25°C 28 − − V BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 − V ICER Collector to Emitter Leakage Current VCE = 175 V RGE = 1 kW TJ = 25°C − − 25 mA TJ = 150°C − − 1 mA VEC = 24 V TJ = 25°C − − 1 mA TJ = 150°C − − 40 IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance − 120 − W 10K − 30K W ON CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6 A, VGE = 4 V, TJ = 25°C − 1.13 1.25 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V, TJ = 150°C − 1.32 1.50 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15 A, VGE = 5 V, TJ = 150°C − 1.64 1.85 V DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA VCE = VGE VGEP Gate to Emitter Plateau Voltage − 23 − nC TJ = 25°C 1.3 1.6 2.2 V TJ = 150°C 0.75 1.1 1.8 VCE = 12 V, ICE = 10 A − 2.7 − V VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 470 W, TJ = 25°C − 0.9 4 ms − 2.6 7 VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 470 W, ICE = 6.5 A, TJ = 25°C − 5.4 15 − 2.7 15 SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Device Package Shipping† FGD3245G2−F085C DPAK (Pb−Free) 2500 Units/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FGD3245G2−F085C TYPICAL CHARACTERISTICS Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp Figure 2. Self Clamped Inductive Switching Current vs. Inductance Figure 4. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 3. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 5. Collector to Emitter On−State Voltage vs. Collector Current Figure 6. Collector to Emitter On−State Voltage vs. Collector Current www.onsemi.com 3 FGD3245G2−F085C TYPICAL CHARACTERISTICS (continued) Figure 7. Collector to Emitter On−State Voltage vs. Collector Current Figure 8. Transfer Characteristics Figure 10. Gate Charge Figure 9. DC Collector Current vs. Case Temperature Figure 11. Threshold Voltage vs. Junction Temperature Figure 12. Leakage Current vs. Junction Temperature www.onsemi.com 4 FGD3245G2−F085C TYPICAL CHARACTERISTICS (continued) Figure 13. Switching Time vs. Junction Temperature Figure 14. Capacitance vs. Collector to Emitter Figure 15. Break Down Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 FGD3245G2−F085C TEST CIRCUIT AND WAVEFORMS Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit Figure 19. Energy Test Circuit Figure 20. Energy Waveforms ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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