FGD3245G2_F085

DATA SHEET www.onsemi.com ECOSPARK)2 320 mJ, 450 V, N-Channel Ignition IGBT G COLLECTOR (FLANGE) E FGD3245G2-F085, FGB3245G2-F085 JEDEC TO−263AB D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ General Description The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs designed in onsemi’s ECOSPARK−2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out−standing Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener−circuitry clamps the IGBT’s collecter−to−emitter voltage at 450 V which enables systems requiring a higher spark voltage Features • • • • • COLLECTOR (FLANGE) G E JEDEC TO−263AA DPAK3 (TO−252 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FGB 3245G2 SCIS Energy = 320 mJ at TJ = 25°C Logic Level Gate Drive Low Saturation Voltage AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant FGB3245G2 FGD3245G2 $Y &Z &3 &K Applications • Automotive lgnition Coil Driver Circuits • Coil On Plug Applications $Y&Z&3&K FGD 3245G2 = Device Code = onsemi Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digits Lot Run Traceability Code SYMBOL COLLECTOR GATE R1 R2 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2021 − Rev. 4 1 Publication Order Number: FGD3245G2−F085/D FGD3245G2−F085, FGB3245G2−F085 DEVICE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 450 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 320 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ IC25 Collector Current Continuous, at VGE = 5 V, TC = 25°C 41 A IC110 Collector Current Continuous, at VGE = 5 V, TC = 110°C 27 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 150 W Power Dissipation Derating, for TC > 25°C 1.1 W/°C Operating Junction Temperature Range −40 to +175 °C Storage Junction Temperature Range −40 to +175 °C PD TJ TSTG Max. Lead Temp. for Soldering (Leads at 1.6 mm from case for 10 s) 300 °C TPKG TL Max. Lead Temp. for Soldering (Package Body for 10 s) 260 °C ESD Electrostatic Discharge Voltage at 100 pF, 1500  4 kV CDM−Electrostatic Discharge Voltage at 1  2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self Clamping Inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy, ISCIS = 14.6 A, VCC = 100 V during inductor charging and VCC = 0 V during the time in clamp. 2. Self Clamping Inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that starting Tj = 150°C; L = 3 mHy, ISCIS = 10.9 A, VCC = 100 V during inductor charging and VCC = 0 V during the time in clamp. www.onsemi.com 2 FGD3245G2−F085, FGB3245G2−F085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF STATE CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage ICE = 2 mA, VGE = 0, RGE = 1 k, TJ = −40 to 150°C 420 − 480 V BVCES Collector to Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 440 − 500 V BVECS Emitter to Collector Breakdown Voltage ICE = −75 mA, VGE = 0 V, TJ = 25°C 28 − − V BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 − V ICER Collector to Emitter Leakage Current VCE = 250 V, RGE = 1 k TJ = 25°C − − 25 A TJ = 150°C − − 1 mA TJ = 25°C − − 1 mA TJ = 150°C − − 40 − 120 −  10 k − 30 k  IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VEC = 24 V ON STATE CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6 A, VGE = 4 V TJ = 25°C − 1.13 1.25 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V TJ = 150°C − 1.32 1.50 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15 A, VGE = 4.5 V TJ = 150°C − 1.64 1.85 V DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA, VCE = VGE VGEP Gate to Emitter Plateau Voltage − 23 − nC TJ = 25°C 1.3 1.6 2.2 V TJ = 150°C 0.75 1.1 1.8 VCE = 12 V, ICE = 10 A − 2.7 − V VCE = 14 V, RL = 1 k VGE = 5 V, RG = 1 k TJ = 25°C − 0.9 4 s − 2.6 7 s VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 1 k ICE = 6.5 A, TJ = 25°C − 5.4 15 s − 2.7 15 s − − 320 mJ − − 0.9 °C/W SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL ESCIS Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive Self Clamped Inductive Switching L = 3.0 mHy, RG = 1 k, VGE = 5 V, (Note 3) TJ = 25°C THERMAL CHARACTERISTICS RJC Thermal Resistance Junction to Case All packages Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Self Clamping Inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy, ISCIS = 14.6 A, VCC = 100 V during inductor charging and VCC = 0 V during the time in clamp. www.onsemi.com 3 FGD3245G2−F085, FGB3245G2−F085 100 RG = 1 k, VGE = 5 V, VCE = 100 V TJ = 150°C 10 1 ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) TYPICAL PERFORMANCE CURVES TJ = 25°C SCIS Curves valid for Vclamp Voltages of