FGD2736G3-F085

EcoSPARKTM 3 270mJ, 360V, N-Channel Ignition IGBT Features Applications  SCIS Energy = 270mJ at TJ = 25°C  Automotive Ignition Coil Driver Circuits  SCIS Energy = 170mJ at TJ = 150°C  Coil On Plug Applications  Logic Level Gate Drive  RoHS Compliant Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 360 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 ISCIS = 13.4A, L = 3.0mHy, RGE = 1K TC = 25°C 270 mJ TC = 150°C 170 mJ ESCIS150 ISCIS = 10.8A, L = 3.0mHy, RGE = 1K IC25 Collector Current Continuous, at TC = 25°C, VGE = 5.0V 21 A IC110 Collector Current Continuous, at TC = 110°C, VGE = 5.0V 18 A VGEM Gate to Emitter Voltage Continuous PD Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C ±10 V 150 W 1 W/oC TJ Operating Junction Temperature Range -40 to +175 oC TSTG Storage Junction Temperature Range -40 to +175 oC TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 oC TPKG Max Lead Temp for soldering (Package Body for 10s) 260 oC ESD Electrostatic Discharge Voltage at100pF, 1500 4 kV ©2017 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: FGD2736G3-F085/D FGD2736G3-F085 EcoSPARKTM 270mJ, 360V, N-Channel Ignition IGBT FGD2736G3-F085 RJC Thermal Resistance Junction to Case o 1 C/W Electrical Characteristics of the IGBT TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVCER VGE = 0V,ICE = 2mA, Collector to Emitter Breakdown Voltage RGE = 1K, TJ = -40 to 150oC 330 - 390 V BVCES VGE = 0V, ICE = 10mA, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 350 - 410 V BVECS Emitter to Collector Breakdown Voltage VGE = 0V, ICE = -75mA, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±5mA ±11 ±14 - V Collector to Emitter Leakage Current VCE = 250V, RGE = 1KΩ - - 25 A - - 1 mA - - 1 - - 40 - 110 -  10K - 30K  ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance TJ = 25oC TJ = 150oC TJ = 25oC VEC = 24V TJ = 150oC mA On Characteristics VCE(SAT) Collector to Emitter Saturation Voltage VGE = 4V, ICE = 6A VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage VGE = 4.5V, ICE = 10A TJ = 25oC TJ = 25oC - 1.25 1.35 V - 1.45 1.65 V 1.6 1.8 V nC TJ = 150oC Dynamic Characteristics QG(ON) Gate Charge VGE = 5V, VCE = 12V, ICE = 10A TJ = 25oC - 18 - 1.3 1.6 2.2 0.75 1.1 1.8 - VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 10A - 3.0 Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 VGE = 5V, RG = 1K Current Rise Time-Resistive - 0.9 4 s - 3 7 s - 4.4 15 s - 1.9 15 s TJ = 150oC V V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH, VGE = 5V, RG = 1K Current Fall Time-Inductive Ordering Information Device Marking FGD2736G3 Device FGD2736G3-F085 Package TO-252AA Reel Size 330mm www.onsemi.com 2 Tape Width 16mm Quantity 2500units FGD2736G3-F085 EcoSPARKTM 270mJ, 360V, N-Channel Ignition IGBT Thermal Characteristics ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 35 SCIS Curves valid for Vclamp Voltages of