FGH40T65SPD-F085

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. www.onsemi.com VCES Eon VCE(Sat) 650 V 1.16 mJ 1.85 V Features • • • • • • • • • • C Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A 100% Of The Part Are Dynamically Tested (Note 1) Short Circuit Ruggedness > 5 mS @ 25°C Maximum Junction Temperature: TJ = 175°C Fast Switching Tight Parameter Distribution Positive Temperature Co−efficient for Easy Parallel Operating Co−Packed With Soft And Fast Recovery Diode AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant G E E G COLLECTOR (FLANGE) Applications • • • • • C TO−247−3LD CASE 340CK On−board Charger Air Conditioner Compressor PTC Heater Motor Drivers Other Automotive Power−Train Applications MARKING DIAGRAM $Y&Z&3&K FGH40T65 SPD $Y &Z &3 &K FGH40T65SPD = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Data code = 2−Digit Lot Traceability code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 February, 2021 − Rev. 3 1 Publication Order Number: FGH40T65SPD−F085/D FGH40T65SPD−F085 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Units VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 40 Pulsed Collector Current (Note 2) 120 A Diode Forward Current @ TC = 25°C 40 A Diode Forward Current @ TC = 100°C 20 IFM Pulsed Diode Maximum Forward Current (Note 2) 120 A PD Maximum Power Dissipation @ TC = 25°C 267 W Maximum Power Dissipation @ TC = 100°C 134 IC ICM IF SCWT Description 5 ms TJ Short Circuit Withstand Time @ TC = 25°C Operating Junction Temperature −55 to +175 °C Tstg Storage Temperature Range −55 to +175 °C TL Maximum Lead Temp. For soldering Purposes, ⅛” from case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 W, Inductive Load. 2. Repetitive rating: pulse width limited by max. Junction temperature. THERMAL CHARACTERISTICS Symbol Rating Max. Units RqJC Thermal Resistance Junction to Case, for IGBT 0.56 _C/W RqJC Thermal Resistance Junction to Case, for Diode 1.71 _C/W RqJA Thermal Resistance Junction to Ambient 40 _C/W PACKING MARKING AND ORDERING INFORMATION Device Marking Device Package Pacing Type Quantity FGH40T65SPD FGH40T65SPD−F085 TO−247−3LD Tube 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA DBVCES / DTJ − 0.6 − V/_C Collector Cut−off Current VGE = 0 V, VCE = VCES ICES − 250 mA G−E Leakage Current VGE = VGES, VCE = 0 V IGES − − ±400 nA G−E Threshold Voltage VGE = VCE, IC = 40 mA VGE(th) 4.0 5.5 7.5 V Collector to Emitter Saturation Voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175_C VCE(sat) − − 1.85 2.51 2.4 − V ON CHARACTERISTICS DYNAMIC CHARACTERISTICS www.onsemi.com 2 FGH40T65SPD−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)(continued) Parameter Test Conditions Symbol Min. Typ. Max. Unit Cies − 1518 − pF Coes − 91 − Cres − 15 − Td(on) − 18 − Tr − 42 − Td(off) − 35 − Tf − 10 − Turn−on Switching Loss Eon − 1.16 − Turn−off Switching Loss Eoff − 0.27 − Total Switching Loss Ets − 1.43 − Td(on) − 16 − Tr − 40 − Td(off) − 37 − Tf − 11 − Turn−on Switching Loss Eon − 1.59 − Turn−off Switching Loss Eoff − 0.42 − Total Switching Loss Ets − 2.01 − Qg − 36 − Qge − 11 − Qgc − 12 − Symbol Min. Typ. Max. Unit VFM − 2.2 2.7 V − 1.9 − DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn−on Delay Time Rise Time Turn−off Delay Time TC = 25_C VCC = 400 V, IC = 40 A Rg = 6 W VGE = 15 V Inductive Load Fall Time Turn−on Delay Time Rise Time Turn−off Delay Time TC = 175_C VCC = 400 V, IC = 40 A Rg = 6 W VGE = 15 V Inductive Load Fall Time Gate Charge Total Gate to Emitter Charge VCE = 400 V, IC = 40 V, VGE = 15 V Gate to Collector Charge ns mJ ns mJ nC ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Test Conditions Parameter Diode Forward Voltage IF = 20 A TC = 25_C TC = 175_C Reverse Recovery Energy Diode Reverse Recovery Time IF = 20 A, dIF/dt = 200 A/ms TC = 175_C Erec − 51 − mJ TC = 25_C Trr − 35 − ns − 214 − − 58 − − 776 − TC = 175_C Diode Reverse Recovery Charge TC = 25_C TC = 175_C Qrr mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS 120 TC = 25°C 20 V 12 V 90 10 V 60 30 0 VGE = 8 V 0 60 10 V 30 VGE = 8 V 0 Collector Current, I C [A] Collector Current, I C [A] 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] Common Emitter VCE = 20 V TC = 25°C TC = 175°C 90 60 30 0 6 2 Figure 3. Typical Saturation Voltage Characteristics 4 80 A 3 40 A 2 IC = 20 A −50 0 6 8 10 12 14 Gate−Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15 V 1 −100 4 50 100 16 Figure 4. Transfer Characteristics Collector−Emitter Voltage,VCE [V] Collector−Emitter Voltage, VCE [V] 5 1 2 3 4 5 6 Collector−Emitter Voltage, VCE [V] 120 30 0 0 Figure 2. Typical Output Characteristics 60 0 15 V 12 V 1 2 3 4 5 6 Collector−Emitter Voltage, VCE [V] Common Emitter VGE = 15 V TC = 25°C TC = 175°C 90 20V 90 Figure 1. Typical Output Characteristics 120 TC = 175°C 15 V Collector Current, I C [A] Collector Current, I C [A] 120 Common Emitter TC = −40°C 16 12 8 40 A 4 0 150 200 Collector−Emitter Case Temperature, T C[ oC] 80 A IC = 20 A 4 8 12 16 20 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 FGH40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 20 Common Emitter TC = 25°C Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 16 12 8 IC = 20 A 4 80 A 40 A 0 4 8 12 16 Common Emitter TC = 175°C 16 12 8 40 A 4 IC = 20 A 0 20 4 8 Gate−Emitter Voltage, VGE [V] Gate−Emitter Voltage, VGE [V] Capacitance [pF] 15 Ciss Ciss 100 Coss Crss 10 1 10 Collector−Emitter Voltage, VCE [V] 20 VCC = 200 V 300 V 400 V 9 6 3 0 30 0 10 20 30 Gate Charge, Qg [nC] 40 Figure 10. Gate Charge Characteristics 300 200 100 100 10 ms Collector Current, I C [A] Collector Current, I C [A] Common Emitter TC = 25°C 12 Figure 9. Capacitance Characteristics 100 ms 10 1 0.1 16 Figure 8. Saturation Voltage vs. VGE Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1000 12 Gate−Emitter Voltage, VGE [V] Figure 7. Saturation Voltage vs. VGE 10000 80 A *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 1 ms 10 ms DC 10 1 10 100 1000 Collector−Emitter Voltage, VCE[V] Safe Operating Area VGE = 15 V, TC = 175°C 1 10 100 1000 Collector−Emitter Voltage, VCE[V] Figure 12. Turn off Switching SOA Characteristics Figure 11. SOA Characteristics www.onsemi.com 5 FGH40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 200 1000 Switching Time [ns] Switching Time [ns] 100 tr td(on) 10 1 0 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 20 30 40 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 100 td(off) tf 10 0 50 10 Gate Resistance, RG [W] Figure 13. Turn−on Characteristics vs. Gate Resistance tr 100 td(on) 10 40 60 Collector Current, IC [A] 20 10 20000 10000 Eoff 10 td(off) 30 40 60 80 Figure 16. Turn−off Characteristics vs. Collector Current Eon 100 0 tf Collector Current, IC [A] Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 1000 100 1 20 Switching Loss [mJ] Switching Loss [mJ] 10000 50 Common Emitter VGE = 15 V, RG = 6 W TC = 25°C TC = 175°C 80 Figure 15. Turn−on Characteristics vs. Collector Current 20000 40 1000 Common Emitter VGE = 15 V, RG = 6 W TC = 25°C TC = 175°C 5 20 30 Figure 14. Turn−off Characteristics vs. Gate Resistance Switching Time [ns] Switching Time [ns] 200 20 Gate Resistance, RG [W] 40 Eon Eoff 1000 100 50 Common Emitter VGE = 15 V, RG = 6 W TC = 25°C TC = 175°C Gate Resistance, RG [W] 30 60 Collector Current, IC [A] Figure 17. Switching Loss vs Gate Resistance Figure 18. Switching Loss vs Collector Current www.onsemi.com 6 FGH40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 200 10000 Reverse Current, IR [mA] Forward Current, IF [A] 100 TJ = 125°C 10 TJ = 175°C TJ = 75°C 1 TJ = 25°C 0 1 TC = 25°C TC = 75°C TC = 125°C TC = 175°C 2 3 4 Forward Voltage, VF [V] TC = 175°C 1000 100 TC = 125°C 10 1 TC = 25°C 0.1 0.01 50 5 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 300 TC = 25°C TC = 175°C 600 400 di/dt = 200 A/ms di/dt = 100 A/ms 200 0 0 10 20 30 40 200 150 di/dt = 200 A/ms 50 Reverse Recovery Current, Irr [A] di/dt = 200 A/ms 6 di/dt = 100 A/ms di/dt = 200 A/ms 2 0 di/dt = 100 A/ms 10 20 30 Forward Current, IF [A] 10 20 30 40 Figure 22. Reverse Recovery Time 8 0 0 Forward Current, IF [A] Figure 21. Stored Charge TC = 25°C TC = 175°C di/dt = 100 A/ms 100 0 50 TC = 25°C TC = 175°C 250 Forward Current, IF [A] 4 600 650 Figure 20. Reverse Current Figure 19. Forward Characteristics 800 200 400 Reverse Voltage, VR [V] 40 Figure 23. Reverse Recovery Current www.onsemi.com 7 50 FGH40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1 Thermal Response [Zqjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM Single Pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zqjc + TC 1E−3 10−5 10−4 10−3 10−2 10−1 100 Rectangular Pulse Duration [s] Figure 24. Transient Thermal Impedance of IGBT 5 Thermal Response [Zqjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zqjc + TC 1E−3 10−5 10−4 10−3 10−2 Rectangular Pulse Duration [s] Figure 25. Transient Thermal Impedance of Diode www.onsemi.com 8 10−1 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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