FGH40T65UQDF-F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Features • • • • • • • • • Max Junction Temperature 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A 100% of the Parts Tested for ILM High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 650 V 40 A C G E E Applications C G COLLECTOR (FLANGE) • Induction Heating, MWO TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH40T65 UQDF $Y &Z &3 &K FGH40T65UQDF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November, 2019 − Rev. 3 1 Publication Order Number: FGH40T65UQDF/D FGH40T65UQDF ABSOLUTE MAXIMUM RATINGS Symbol FGH40T65UQDF Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V TC = 25°C 80 A TC = 100°C 40 A TC = 25°C 120 A 120 A IC Description Collector Current ILM (Note 1) Pulsed Collector Current ICM (Note 2) Pulsed Collector Current IF Diode Forward Current TC = 25°C 40 A Diode Forward Current TC = 100°C 20 A 60 A 231 W IFM Pulsed Diode Maximum Forward Current PD Maximum Power Dissipation 115 W TJ Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C TC = 25°C TC = 100°C TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH40T65UQDF Unit RqJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.65 _C/W RqJC (Diode) Thermal Resistance, Junction to Case, Max. 1.75 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Qty per Tube FGH40T65UQDF FGH40T65UQDF−F155 TO−247−3LD − − 30 www.onsemi.com 2 FGH40T65UQDF ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGE = 0 V, IC = 1 mA 650 − − V VGE = 0 V, IC = 1 mA − 0.52 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 40 mA, VCE = VGE 2.5 4.0 5.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V − 1.33 1.67 V IC = 40 A, VGE = 15 V, TC = 175°C − 1.5 − V VCE = 30 V, VGE = 0 V, f = 1MHz − 7309 − pF − 58 − pF − 30 − pF − 32 − ns − 18 − ns Turn−Off Delay Time − 271 − ns Fall Time − 11 − ns Eon Turn−On Switching Loss − 989 − mJ Eoff Turn−Off Switching Loss − 310 − mJ Ets Total Switching Loss − 1299 − mJ Td(on) Turn−On Delay Time − 30 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Turn−On Delay Time Rise Time VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 25°C − 22 − ns Turn−Off Delay Time − 298 − ns Fall Time − 16 − ns Eon Turn−On Switching Loss − 1400 − mJ Eoff Turn−Off Switching Loss − 553 − mJ Ets Total Switching Loss − 1953 − mJ Qg Total Gate Charge − 306 − nC Qge Gate to Emitter Charge − 30 − nC Qgc Gate to Collector Charge − 77 − nC Td(off) Tf Rise Time VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 25°C VCE = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T65UQDF ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Test Conditions IF = 20 A IF = 20 A, dIF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 1.5 1.95 V TC = 175°C − 1.39 − TC = 175°C − 115 − mJ TC = 25°C − 89 − ns TC = 175°C − 251 − TC = 25°C − 289 − TC = 175°C − 1502 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH40T65UQDF TYPICAL CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH40T65UQDF TYPICAL CHARACTERISTICS (Continued) Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 6 FGH40T65UQDF TYPICAL CHARACTERISTICS (Continued) Figure 13. Turn−off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 7 FGH40T65UQDF TYPICAL CHARACTERISTICS (Continued) Figure 19. Reverse Recovery Time Figure 20. Stored Charge P DM t1 t2 Figure 21. Transient Thermal Impedance of IGBT P DM t1 t2 Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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