FGH40T65SPD_F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.85 V (Typ.) @ IC = 40 A High Input Impedance Fast Switching Tighten Parameter Distribution Short Circuit Ruggedness > 5 s @ 25°C This Device is Pb−Free and is RoHS Compliant G E E C G COLLECTOR (FLANGE) Applications TO−247−3LD CASE 340CH • Solar Inverter, UPS, Welder, PFC, Telecom, ESS MARKING DIAGRAM $Y&Z&3&K FGH40T65 SPD $Y &Z &3 &K FGH40T65SPD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 November, 2020 − Rev. 4 1 Publication Order Number: FGH40T65SPD/D FGH40T65SPD ABSOLUTE MAXIMUM RATINGS Description Symbol FGH40T65SPD−F155 Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±30 V 80 A 40 A ICM 120 A IF 40 A 20 A IFM 120 A PD 267 W 134 W SCWT 5 s Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C IC Pulsed Collector Current (Note 2) Diode Forward Current TC = 25°C Diode Forward Current TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C Short Circuit Withstand Time TC = 25°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case (IGBT) RJC − 0.56 °C/W Thermal Resistance, Junction to Case (Diode) RJC − 1.71 °C/W Thermal Resistance, Junction to Ambient RJA − 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40T65SPD FGH40T65SPD−F155 TO−247−3LD − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 1 mA 0.6 V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 4 5.5 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.85 2.4 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.51 − V ON CHARACTERISTICS www.onsemi.com 2 FGH40T65SPD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 1370 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 94 − pF Reverse Transfer Capacitance Cres − 16 − pF − 16 − ns − 42 − ns Td(off) − 37 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Td(on) Tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 25°C Tf − 11 − ns Turn−On Switching Loss Eon − 1.16 − mJ Turn−Off Switching Loss Eoff − 0.28 − mJ Total Switching Loss Ets − 1.44 − mJ Turn−On Delay Time Td(on) − 14 − ns − 49 − ns Td(off) − 38 − ns Tf − 18 − ns Turn−On Switching Loss Eon − 1.54 − mJ Turn−Off Switching Loss Eoff − 0.52 − mJ Total Switching Loss Ets − 2.06 − mJ Short Circuit Withstand Time TSC VCC = 400 V, VGE = 15 V, RG = 10  5 − − s Total Gate Charge Qg − 35 − nC Gate to Emitter Charge Qge VCC = 400 V, IC = 40 A, VGE = 15 V − 11 − nC Gate to Collector Charge Qgc − 12 − nC Min Typ Max Unit TC = 25°C − 2.2 2.7 V TC = 175°C − 1.9 − TC = 175°C − 76 − J TC = 25°C − 34 − ns TC = 175°C − 196 − TC = 25°C − 52 − TC = 175°C − 638 − Rise Time Tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 175°C ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Test Conditions VFM IF = 20 A Erec IF = 20 A, dIF/dt = 200 A/s Trr Qrr nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T65SPD IC, Collector Current (A) IC, Collector Current (A) TYPICAL PERFORMANCE CHARACTERISTICS VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) Figure 2. Typical Output Characteristics IC, Collector Current (A) VCE, Collector−Emitter Voltage (V) Figure 1. Typical Output Characteristics VCE, Collector−Emitter Voltage (V) TC, Case Temperature (°C) Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) Figure 3. Typical Saturation Voltage Characteristics VGE, Gate−Emitter Voltage (V) VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 FGH40T65SPD Capacitance (pF) VGE, Gate−Emitter Voltage (V) TYPICAL PERFORMANCE CHARACTERISTICS (continued) VCE, Collector−Emitter Voltage (V) Qg, Gate Charge (nC) Figure 7. Capacitance Characteristics Switching Time (ns) Switching Time (ns) Figure 8. Gate Charge Characteristics RG, Gate Resistance () RG, Gate Resistance () Figure 9. Turn−On Characteristics vs. Gate Resistance Switching Loss (mJ) Switching Time (ns) Figure 10. Turn−Off Characteristics vs. Gate Resistance IC, Collector Current (A) RG, Gate Resistance () Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 FGH40T65SPD Switching Time (ns) Switching Loss (mJ) TYPICAL PERFORMANCE CHARACTERISTICS (continued) IC, Collector Current (A) IC, Collector Current (A) Figure 14. Switching Loss vs. Collector Current Collector Current (A) IC, Collector Current (A) Figure 13. Turn−Off Characteristics vs. Collector Current f, Switching Frequency (Hz) VCE, Collector−Emitter Voltage (V) Figure 16. SOA Characteristics Irr, Reverse Recovery Current (A) IF, Forward Current (A) Figure 15. Load Current vs. Frequency C C C VF, Forward Voltage (V) IF, Forward Current (A) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 FGH40T65SPD trr, Reverse Recovery Time (ns) Qrr, Stored Recovery Charge (nC) TYPICAL PERFORMANCE CHARACTERISTICS (continued) IF, Forward Current (A) IF, Forward Current (A) Figure 19. Reverse Recovery Time Thermal Response (Zjc) Figure 20. Stored Charge P DM t1 t2 Rectangular Pulse Duration (sec) Thermal Response (Zjc) Figure 21. Transient Thermal Impedance of IGBT P DM t1 t2 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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