FGH40T65SHDF_F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. www.onsemi.com C Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH Applications • Induction Heating, MWO MARKING DIAGRAM $Y&Z&3&K FGH40T65 SHDF $Y &Z &3 &K FGH40T65SHDF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2020 − Rev. 4 1 Publication Order Number: FGH40T65SHDF/D FGH40T65SHDF ABSOLUTE MAXIMUM RATINGS Description Symbol FGH40T65SHDF−F155 Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±30 V 80 A 40 A ILM 120 A ICM 120 A IF 40 A 20 A Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current (Note 1) TC = 25°C IC Pulsed Collector Current (Note 2) Diode Forward Current TC = 25°C Diode Forward Current TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IFM 60 A PD 268 W 134 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 , Inductive Load 2. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol FGH40T65SHDF−F155 Unit Thermal Resistance, Junction to Case (IGBT) Parameter RJC 0.56 °C/W Thermal Resistance, Junction to Case (Diode) RJC 1.75 °C/W Thermal Resistance, Junction to Ambient RJA 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40T65SHDF FGH40T65SHDF−F155 TO−247−3LD − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 1 mA 0.6 V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 3.5 5.5 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.45 1.85 V IC = 40 A, VGE = 15 V, TC = 175°C − 1.8 − V ON CHARACTERISTICS www.onsemi.com 2 FGH40T65SHDF ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 1982 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 70 − pF Reverse Transfer Capacitance Cres − 25 − pF − 18 − ns − 27 − ns Td(off) − 64 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Td(on) Tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 25°C Tf − 3 − ns Turn−On Switching Loss Eon − 1.22 − mJ Turn−Off Switching Loss Eoff − 0.44 − mJ Total Switching Loss Ets − 1.66 − mJ Turn−On Delay Time Td(on) − 18 − ns − 31 − ns Td(off) − 70 − ns Tf − 56 − ns Turn−On Switching Loss Eon − 1.78 − mJ Turn−Off Switching Loss Eoff − 0.78 − mJ Total Switching Loss Ets − 2.56 − mJ Total Gate Charge Qg − 68 − nC Gate to Emitter Charge Qge − 12 − nC Gate to Collector Charge Qgc − 25 − nC Min Typ Max Unit V Rise Time Tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 175°C VCC = 400 V, IC = 40 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec Trr Test Conditions IF = 20 A IF = 20 A, dIF/dt = 200 A/s Qrr TC = 25°C − 1.5 1.95 TC = 175°C − 1.37 − TC = 175°C − 153 − J TC = 25°C − 101 − ns TC = 175°C − 238 − TC = 25°C − 343 − TC = 175°C − 1493 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T65SHDF TYPICAL PERFORMANCE CHARACTERISTICS 20 V IC, Collector Current (A) 100 15 V 12 V 120 TC = 25°C 10 V IC, Collector Current (A) 120 80 60 VGE = 8 V 40 20 0 0 1 2 3 4 5 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) 30 0 30 1 2 3 VCE, Collector−Emitter Voltage (V) 4 40 A 80 A 4 0 4 8 12 16 Common Emitter VGE = 15 V 2 40 A 1 −100 IC = 20 A 50 0 50 100 150 200 20 IC = 20 A 8 6 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter TC = 25°C 16 4 3 TC, Case Temperature (°C) VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 20 2 1 80 A Figure 3. Typical Saturation Voltage Characteristics 12 0 3 60 0 VGE = 8 V Figure 2. Typical Output Characteristics Common Emitter VGE = 15 V TC = 25°C TC = 175°C 90 60 VCE, Collector−Emitter Voltage (V) Figure 1. Typical Output Characteristics 120 10 V 90 0 6 12 V T = 175°C C 20 V 15 V 16 12 VGE, Gate−Emitter Voltage (V) 80 A 8 40 A 4 0 20 Common Emitter TC = 175°C IC = 20 A 4 8 12 16 VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 20 FGH40T65SHDF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10000 VGE, Gate−Emitter Voltage (V) 15 Capacitance (pF) Cies 1000 Coes 100 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 10 Cres 1 10 Common Emitter TC = 25°C 12 400 V 9 6 3 0 30 0 20 VCE, Collector−Emitter Voltage (V) 40 80 Figure 8. Gate Charge Characteristics 100 1000 td(off) Switching Time (ns) tr Switching Time (ns) 60 Qg, Gate Charge (nC) Figure 7. Capacitance Characteristics td(on) Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 5 300 V VCC = 200 V 0 10 20 30 40 100 tf 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 1 50 0 RG, Gate Resistance () 10 20 30 40 50 RG, Gate Resistance () Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance 100 5000 Switching Time (ns) Switching Loss (J) tr Eon 1000 Eoff 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 0 10 20 30 40 td(on) Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 10 5 50 RG, Gate Resistance () Figure 11. Switching Loss vs. Gate Resistance 20 60 40 IC, Collector Current (A) 80 Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGH40T65SHDF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 200 10000 td(off) Switching Loss (J) Switching Time (ns) 100 tf 10 Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 1 20 40 60 Eon 1000 100 20 80 40 IC, Collector Current (A) 100 IC, Collector Current (A) Collector Current (A) 300 TC = 25°C 150 TC = 75°C TC = 100°C 100 50 0 1k 10k 100k 10 s 100 s 1 ms 10 10 ms DC 1 0.1 1M *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 100 10 1000 f, Switching Frequency (Hz) VCE, Collector−Emitter Voltage (V) Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics 80 15 TC = 175°C TC = 25°C TC = 75°C 10 1 Irr, Reverse Recovery Current (A) IF, Forward Current (A) 80 Figure 14. Switching Loss vs. Collector Current Square Wave TJ ≤ 175°C, D = 0.5, VCE = 400 V VGE = 15/0 V, RG = 6  200 60 IC, Collector Current (A) Figure 13. Turn−Off Characteristics vs. Collector Current 250 Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C Eoff TC = 25°C TC = 75°C TC = 175°C 0 1 2 12 9 VF, Forward Voltage (V) di/dt = 100 A/s 6 di/dt = 200 A/s 3 0 3 di/dt = 200 A/s di/dt = 100 A/s 0 10 20 TC = 25°C TC = 175°C 30 40 50 IF, Forward Current (A) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 FGH40T65SHDF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2000 400 300 200 di/dt = 200 A/s di/dt = 100 A/s 100 0 10 20 30 1500 1000 di/dt = 100 A/s 0 40 0 10 20 Figure 20. Stored Charge 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 10−4 10−3 10−2 100 10−1 Rectangular Pulse Duration (sec) Figure 21. Transient Thermal Impedance of IGBT 5 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1E−3 10−5 30 IF, Forward Current (A) Figure 19. Reverse Recovery Time 1E−3 10−5 di/dt = 200 A/s 500 IF, Forward Current (A) Thermal Response (Zjc) 0 TC = 25°C TC = 175°C Qrr, Stored Recovery Charge (nC) TC = 25°C TC = 175°C Thermal Response (Zjc) trr, Reverse Recovery Time (ns) 500 10−4 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 10−2 10−3 10−1 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 100 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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