FGH40T65SH_F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SH Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applica−tions where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant G E E C G TO−247−3LD CASE 340CH Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC MARKING DIAGRAM $Y&Z&3&K FGH40T65 SH $Y &Z &3 &K FGH40T65SH = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December, 2020 − Rev. 3 1 Publication Order Number: FGH40T65SH/D FGH40T65SH ABSOLUTE MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted) Symbol FGH40T65SH Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±30 V 80 A 40 A ILM 120 A ICM 120 A PD 268 W 134 W Description Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current (Note 1) TC = 25°C IC Pulsed Collector Current (Note 2) Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 41,6 , Inductive Load 2. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol FGH40T65SH Unit Thermal Resistance, Junction to Case, Max. RJC 0.56 °C/W Thermal Resistance, Junction to Ambient, Max. RJA 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Top Mark Part Number Package Reel Size Tape Width Quantity FGH40T65SH FGH40T65SH−F155 TO−247−3LD − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max − − Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 1 mA 650 IC = 1 mA, Reference to 25°C 0.6 V V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 4.0 5.5 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.6 2.1 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.14 − V ON CHARACTERISTICS www.onsemi.com 2 FGH40T65SH ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 1995 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 70 − pF Reverse Transfer Capacitance Cres − 23 − pF − 19.2 − ns − 34.4 − ns td(off) − 65.6 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 25°C tf − 9.6 − ns Turn−On Switching Loss Eon − 1010 − J Turn−Off Switching Loss Eoff − 297 − J Total Switching Loss Ets − 1307 − J Turn−On Delay Time td(on) − 18.4 − ns − 32.8 − ns td(off) − 71.2 − ns tf − 14.4 − ns Turn−On Switching Loss Eon − 1390 − J Turn−Off Switching Loss Eoff − 541 − J Total Switching Loss Ets − 1931 − J Total Gate Charge Qg − 72.2 − nC Gate to Emitter Charge Qge − 13.5 − nC Gate to Collector Charge Qgc − 28.5 − nC Rise Time Turn−Off Delay Time Fall Time tr VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 175°C VCC = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T65SH TYPICAL PERFORMANCE CHARACTERISTICS TC = 25°C 120 20 V 12 V 90 10 V 60 VGE = 8 V 30 0 0 1 2 3 4 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) 30 0 60 1 2 3 VCE, Collector−Emitter Voltage (V) 30 4 40 A 80 A 4 IC = 20 A 8 12 16 3 4 5 Common Emitter VGE = 15 V 2 40 A IC = 20 A 1 −100 50 0 20 12 4 2 50 100 150 200 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter TC = 25°C 16 1 TC, Case Temperature (°C) VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 20 0 0 80 A Figure 3. Typical Saturation Voltage Characteristics 8 VGE = 8 V 3 60 0 10 V Figure 2. Typical Output Characteristics Common Emitter VGE = 15 V TC = 25°C TC = 175°C 90 12 V VCE, Collector−Emitter Voltage (V) Figure 1. Typical Output Characteristics 120 15 V 90 0 5 20 V TC = 175°C 15 V IC, Collector Current (A) IC, Collector Current (A) 120 16 12 40 A 8 80 A 4 0 20 VGE, Gate−Emitter Voltage (V) Common Emitter TC = 175°C IC = 20 A 4 8 12 16 VGE, Gate−Emitter Voltage (V) 20 Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 FGH40T65SH TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10000 VGE, Gate−Emitter Voltage (V) 15 Capacitance (pF) Cies 1000 Coes 100 10 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C Cres 1 10 Common Emitter TC = 25°C 12 VCC = 200 V 400 V 9 6 3 0 30 0 20 VCE, Collector−Emitter Voltage (V) 40 80 Qg, Gate Charge (nC) 100 1000 tr td(off) Switching Time (ns) Switching Time (ns) 60 Figure 8. Gate Charge Characteristics Figure 7. Capacitance Characteristics td(on) Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 5 300 V 0 10 20 30 40 100 tf 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 1 50 0 RG, Gate Resistance () 10 20 30 40 50 RG, Gate Resistance () Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance 5000 100 Switching Time (ns) Switching Loss (J) tr Eon 1000 Eoff 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 0 10 20 30 40 td(on) Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 10 5 50 RG, Gate Resistance () Figure 11. Switching Loss vs. Gate Resistance 20 60 40 IC, Collector Current (A) 80 Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGH40T65SH TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10000 td(off) 100 Switching Loss (J) Switching Time (ns) 500 tf 10 1 Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 20 40 60 Eon 1000 Eoff Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 100 20 80 40 IC, Collector Current (A) 300 Square Wave TJ ≤ 175°C, D = 0.5, VCE = 400 V VGE = 15/0 V, RG = 6  IC, Collector Current (A) 100 TC = 25°C 150 TC = 75°C 100 50 0 1k TC = 100°C 10k 100k 100 s 1 ms 10 10 ms 1 0.1 1M 10 s DC *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 f, Switching Frequency (Hz) 100 1000 10 VCE, Collector−Emitter Voltage (V) Figure 16. SOA Characteristics Figure 15. Load Current vs. Frequency 0.6 Thermal Response (Zjc) IC, Collector Current (A) 200 0.5 0.1 0.2 0.1 0.05 0.02 PDM 0.01 0.01 10−4 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC Single Pulse 0.005 10−5 80 Figure 14. Switching Loss vs. Collector Current Figure 13. Turn−Off Characteristics vs. Collector Current 250 60 IC, Collector Current (A) 10−3 10−2 10−1 Rectangular Pulse Duration (sec) Figure 17. Transient Thermal Impedance of IGBT www.onsemi.com 6 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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