FGH50N3

IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor’s planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. www.onsemi.com Features • • • • • • C Low Saturation Voltage: VCE(sat) = 1.4 V Max Low EOFF = 6.6 uJ/A SCWT = 8 s @ = 125°C 300 V Switching SOA Capability Positive Temperature Coefficient above 50 A This is a Pb−Free Device G E Applications • SMPS E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH50N3 $Y &Z &3 &K FGH50N3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 February, 2020 − Rev. 3 1 Publication Order Number: FGH50N3/D FGH50N3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous TC = 25°C Symbol Ratings Unit BVCES 300 V IC 75 A 75 A TC = 110°C Collector Current Pulsed (Note 1) ICM 240 A Gate to Emitter Voltage Continuous VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C, Figure 2 SSOA 150 A at 300 V Single Pulse Avalanche Energy, ICE = 30 A, L = 1.78 mH, VDD = 50 V EAS 800 mJ Single Pulse Reverse Avalanche Energy, IEC = 30 A, L = 1.78 mH, VDD = 50 V EARV 800 mJ PD 463 W 3.7 W/°C TJ −55 to +150 °C TSTG −55 to +150 °C tSC 8 s Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range Storage Temperature Range Range Short Circuit Withstand Time (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 180 V, TJ = 125°C, VGE = 12 Vdc, RG = 5  PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tape Width Quantity FGH50N3 FGH50N3 TO−247 N/A 30 THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction−Case Symbol RJC Test Conditions TO−247 Min Typ Max Unit − − 0.27 °C/W Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions OFF STATE CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES ICE = 250 A, VGE = 0 V, 300 − − V Emitter to Collector Breakdown Voltage BVECS IEC = 10 mA, VGE = 0 V 15 − − V TJ = 25°C − − 250 A TJ = 125°C − − 2.0 mA − − ±250 nA TJ = 25°C − 1.30 1.4 V TJ = 125°C − 1.25 1.4 V VGE = 15 V − 180 − nC VGE = 20 V − 228 − nC Collector to Emitter Leakage Current Gate to Emitter Leakage Current ICES IGES VCE = 300 V VGE = ±20 V ON STATE CHARACTERISTICs Collector to Emitter Saturation Voltage VCE(SAT) ICE = 30 A, VGE = 15 V DYNAMIC CHARACTERISTICS Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage QG(ON) ICE = 30 A, VCE = 150 V VGE(TH) ICE = 250 A, VCE= VGE 4.0 4.8 5.5 V VGEP ICE = 30 A, VCE = 150 V − 7.0 − V www.onsemi.com 2 FGH50N3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit 150 − − A − 20 − ns − 15 − ns − 135 − ns − 12 − ns − 130 − J − 92 120 J − 19 − ns − 13 − ns − 155 190 ns − 7 15 ns − 225 270 J − 135 200 J SWITCHING CHARACTERISTICS Switching SOA SSOA TJ = 150°C, RG = 5  VGE = 15 V, L = 25 H, VCE = 300 V Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 25°C, ICE = 30 A, VCE = 180 V, VGE = 15 V, RG = 5  , L = 100 H, Test Circuit − Figure 20 Current Rise Time Current Turn−Off Delay Time Current Fall Time trI td(OFF)I tfI Turn−On Energy (Note 3) EON2 Turn−Off Energy Loss (Note 4) EOFF Current Turn−On Delay Time td(ON)I Current Rise Time Current Turn−Off Delay Time Current Fall Time trI td(OFF)I tfI Turn−On Energy (Note 3) EON2 Turn−Off Energy (Note 4) EOFF IGBT and Diode at TJ = 125°C, ICE = 30 A, VCE = 180 V, VGE = 15 V, RG = 5  , L = 100 H, Test Circuit − Figure 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. EON2 is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 4. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. www.onsemi.com 3 FGH50N3 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 175 VGE = 15 V ICE, Collector to Emitter Current (A) ICE, DC Collector Current (A) 200 160 120 80 Package Limited 40 0 50 25 75 100 125 TJ = 150°C, RG = 5 , VGE = 15 V, L = 25 H 150 125 100 75 50 25 0 150 0 TC, Case Temperature (°C) tsc, Short Circuit Withstand Time (s) fMAX, Operating Frequency (kHz) VGE = 15 V 200 VGE = 10 V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD − PC) / (EON2 + EOFF) PC = Conduction Dissipation (Duty Factor = 50%) RJC = 0.27°C/W, See Notes 60 10 20 2 30 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) TJ = 150°C 10 TJ = 125°C 1.0 1.25 1.5 1.75 600 500 10 400 5 300 60 TJ = 25°C 0.75 tsc 0 9 10 11 12 13 14 15 200 16 VGE, Gate to Emitter Voltage (V) 30 0.5 700 Isc Figure 4. Short Circuit Withstand Time 40 0 0.25 800 15 200 Duty Cycle < 0.5%, VGE = 10 V Pulse Duration = 250 s 20 350 VCE = 180 V, RG = 5 , TJ = 125°C 20 ICE, Collector to Emitter Current (A) 50 300 250 25 Figure 3. Operating Frequency vs. Collector to Emitter Current 60 200 Figure 2. Minimum Switching Safe Operating Area TJ = 125°C, RG = 5 , L = 100 H, VCE = 180 V, TC = 75°C 300 150 50 Duty Cycle < 0.5%, VGE = 15 V Pulse Duration = 250 s 40 30 TJ = 25°C 20 TJ = 150°C 10 0 0.25 2.0 VCE, Collector to Emitter Voltage (V) TJ = 125°C 0.5 0.75 1.0 1.25 1.5 1.75 VCE, Collector to Emitter Voltage (V) Figure 5. Collector to Emitter On−State Voltage Figure 6. Collector to Emitter On−State Voltage www.onsemi.com 4 Isc, Peak Short Circuit Current (A) 400 100 VCE, Collector to Emitter Voltage (V) Figure 1. DC Collector Current vs. Case Temperature 500 50 FGH50N3 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued) 400 RG = 5 , L = 100 H, VCE = 180 V 1.2 EOFF, Turn−Off Energy Loss (J) EON2, Turn−On Energy Loss (mJ) 1.4 TJ = 25°C, TJ = 125°C, VGE = 10 V 1.0 0.8 0.6 0.4 0.2 0 TJ = 25°C 0 TJ = 125°C, VGE = 15 V 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) trI, Rise Time (ns) td(ON)I, Turn−On Delay Time (ns) 150 100 50 0 TJ = 25°C, VGE = 10 V, VGE = 15 V 60 10 20 30 40 50 ICE, Collector to Emitter Current (A) RG = 5 , L = 100 H, VCE = 180 V 80 TJ = 25°C, TJ = 125°C, VGE = 10 V 20 TJ = 25°C, TJ = 125°C, VGE = 10 V 60 40 20 TJ = 25°C, TJ = 125°C, VGE = 15 V 0 10 20 30 40 50 ICE, Collector to Emitter Current (A) 0 60 170 24 RG = 5 , L = 100 H, VCE = 180 V 160 TJ = 25°C, TJ = 125°C, VGE = 15 V 0 10 20 30 40 50 ICE, Collector to Emitter Current (A) 60 Figure 10. Turn−On Rise Time vs. Collector to Emitter Current Figure 9. Turn−On Delay Time vs. Collector to Emitter Current RG = 5 , L = 100 H, VCE = 180 V 20 150 tfI, Fall Time (ns) td(OFF), Turn−Off Delay Time (ns) 200 100 RG = 5 , L = 100 H, VCE = 180 V 25 TJ = 25°C, TJ = 125°C, VGE = 15 V 140 130 120 TJ = 25°C, VGE = 10 V, 15 V 16 12 8 4 110 100 250 Figure 8. Turn−Off Energy Loss vs. Collector to Emitter Current 30 15 TJ = 125°C, VGE = 10 V, VGE = 15 V 300 0 Figure 7. Turn−On Energy Loss vs. Collector to Emitter Current 35 RG = 5 , L = 100 H, VCE = 180 V 350 TJ = 25°C, TJ = 125°C, VGE = 10 V 0 10 20 30 40 50 0 60 ICE, Collector to Emitter Current (A) TJ = 125°C, VGE = 10 V, 15 V 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) Figure 12. Fall Time vs. Collector to Emitter Current Figure 11. Turn−Off Delay Time vs. Collector to Emitter Current www.onsemi.com 5 FGH50N3 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued) 16 Duty Cycle < 0.5%, VCE = 10 V Pulse Duration = 250 s 200 VGE, Gate to Emitter Voltage (V) ICE, Collector to Emitter Current (A) 250 150 TJ = 25°C 100 TJ = 125°C 50 0 TJ = −55°C 10 8 9 6 7 VGE, Gate to Emitter Voltage (V) 5 IG(REF) = 1 mA, RL = 5 , TJ = 25°C 14 12 VCE = 300 V 10 8 6 VCE = 200 V 4 VCE = 100 V 2 0 11 0 25 Figure 14. Gate Charge 1.2 ETOTAL, Total Switching Energy Loss (mJ) ETOTAL, Total Switching Energy Loss (mJ) Figure 13. Transfer Characteristics RG = 5 , L = 100 H, VCE = 180 V, VGE = 15 V 1.0 ETOTAL = EON2 + EOFF ICE = 60 A 0.8 0.6 ICE = 30 A 0.4 ICE = 15 A 0.2 0 25 50 75 100 125 150 40 TJ = 125°C, L = 100 H, VCE = 180 V, VGE = 15 V ETOTAL = EON2 + EOFF 10 ICE = 60 A 1 ICE = 30 A ICE = 15 A 0.1 10 100 RG, Gate Resistance () 1 TC, Case Temperature (°C) VCE, Collector to Emitter Voltage (V) C, Capacitance (nF) 3.5 Frequency = 1 MHz CIES 1.0 COES CRES 0.1 0.05 0 1000 Figure 16. Total Switching Loss vs. Gate Resistance Figure 15. Total Switching Loss vs. Case Temperature 10 50 75 100 125 150 175 200 QG, Gate Charge (nC) 10 20 30 40 50 60 70 80 90 100 VCE, Collector to Emitter Voltage (V) Duty Cycle < 0.5% Pulse Duration = 250 s, TJ = 25°C 3.0 ICE = 60 A 2.5 ICE = 30 A 2.0 ICE = 15 A 1.5 1.0 6 7 8 9 10 11 12 13 14 15 16 VGE, Gate to Emitter Voltage (V) Figure 18. Collector to Emitter On−State Voltage vs. Gate to Emitter Voltage Figure 17. Capacitance vs. Collector to Emitter Voltage www.onsemi.com 6 FGH50N3 ZJC, Normalized Thermal Response TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued) 100 0.50 0.20 10−1 t1 0.10 PD t2 0.05 Duty Factor, D = t1/t2 Peak TJ = (PD x ZJC x RJC) + TC 0.02 0.01 10−2 10−5 Single Pulse 10−3 10−2 10−1 t1, Rectangular Pulse Duration (s) 10−4 100 101 Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case FFH30US30S Diode 49449 90% 10% VGE L = 100 H EON2 EOFF VCE RG = 5  + FGH50N3 − 90% VDD = 180 V ICE 10% td(OFF)I tfI trI td(ON)I Figure 21. Switching Test Waveforms Figure 20. Inductive Switching Test Circuit www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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