ISL9V3040P3

DATA SHEET www.onsemi.com ECOSPARK Ignition IGBT COLLECTOR 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 R1 GATE R2 EMITTER General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D−Pak (TO−252), as well as the industry standard D2−Pak (TO−263), and TO−262 and TO−220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. ECOSPARK devices can be custom made to specific clamp voltages. Contact your nearest onsemi sales office for more information. Formerly Developmental Type 49362. DPAK3 CASE 369AS D2PAK−3 CASE 418AJ Features • • • • • Space Saving D−Pak Package Availability SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices TO−220−3LD CASE 340AT MARKING DIAGRAMS AYWW XXX XXXXXG Applications • Automotive Ignition Coil Driver Circuits • Coil−On Plug Application A Y WW XXXX ZZ G AYWWZZ XXXXX = Assembly Location = Year = Work Week = Device Code = Assembly Lot Number = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2004 November, 2021 − Rev. 4 1 Publication Order Number: ISL9V3040P3/D ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) Parameter 430 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 14.2 A, L = 3.0 mHy 300 mJ ESCIS150 At Starting TJ = 150°C, ISCIS = 10.6 A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 150 W Power Dissipation Derating TC > 25°C 1.0 W/°C Operating Junction Temperature Range −40 to 175 °C Storage Junction Temperature Range −40 to 175 °C TJ TSTG Max Lead Temp for Soldering (Leads at 1.6 mm from Case for 10 s) 300 °C Tpkg TL Max Lead Temp for Soldering (Package Body for 10 s) 260 °C ESD Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Units RqJC 1.0 °C/W Thermal Resistance Junction Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage IC = 2 mA, VGE = 0 V, RG = 1 kW, See Figure 15 TJ = −40 to 150°C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage IC = 10 mA, VGE = 0 V, RG = 0, See Figure 15 TJ = −40 to 150°C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage IC = −75 mA, VGE = 0 V, TC = 25°C 30 − − V BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 − V ICER Collector to Emitter Leakage Current VCER = 250 V RG = 1 kW See Figure 11 TC = 25°C − − 25 mA TC = 150°C − − 1 mA VEC = 24 V, See Figure 11 TC = 25°C − − 1 mA TC = 150°C − − 40 − 70 − W 10K − 26K W IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ON CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage IC = 6 A, VGE = 4 V TC = 25°C, See Figure 3 − 1.25 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 10 A, VGE = 4.5 V TC = 150°C, See Figure 4 − 1.58 1.80 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15 A, VGE = 4.5 V TC = 150°C − 1.90 2.20 V www.onsemi.com 2 ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ. Max. Units − 17 − nC TC = 25°C 1.3 − 2.2 V TC = 150°C 0.75 − 1.8 VCE = 12 V, IC = 10 A − 3.0 − V VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 1 kW, TJ = 25°C, See Figure 12 − 0.7 4 ms − 2.1 7 VCE = 300 V, L = 500 mH, VGE = 5 V, RG = 1 kW, TJ = 25°C, See Figure 12 − 4.8 15 − 2.8 15 TJ = 25°C, L = 3.0 mH, VGE = 5 V, RG = 1 kW, See Figure 1 and Figure 2 − − 300 DYNAMIC CHARACTERISTICS QG(ON) Gate Charge IC = 10 A, VCE = 12 V, VGE = 5 V See Figure 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0 mA VCE = VGE See Figure 10 VGEP Gate to Emitter Plateau Voltage SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL SCIS Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive Self Clamped Inductive Switching ms mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 TYPICAL CHARACTERISTICS Figure 2. Self Clamped Inductive Switching Current vs. Inductance Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp Figure 3. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 4. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 5. Collector to Emitter On−State Voltage vs. Collector Current Figure 6. Collector to Emitter On−State Voltage vs. Collector Current www.onsemi.com 4 ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 TYPICAL CHARACTERISTICS (continued) Figure 7. Collector to Emitter On−State Voltage vs. Collector Current Figure 8. Transfer Characteristics Figure 10. Threshold Voltage vs. Junction Temperature Figure 9. DC Collector Current vs. Case Temperature Figure 12. Switching Time vs. Junction Temperature Figure 11. Leakage Current vs. Junction Temperature www.onsemi.com 5 ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 TYPICAL CHARACTERISTICS (continued) Figure 13. Capacitance vs. Collector to Emitter Voltage Figure 14. Gate Charge Figure 15. Breakdown Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 6 ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 TEST CIRCUIT AND WAVEFORMS Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.com 7 ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 PACKAGE MARKING AND ORDERING INFORMATION Device Package Shipping† ISL9V3040D3ST DPAK (Pb−Free) 2500 Units/Tape & Reel ISL9V3040S3ST D2PAK (Pb−Free) 800 Units/Tape & Reel ISL9V3040P3 TO220 (Pb−Free) 50 Units/Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE A DATE 28 SEP 2022 GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AYWWZZ XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code DOCUMENT NUMBER: DESCRIPTION: *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 98AON13810G DPAK3 (TO−252 3 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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