KSC3503DSTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* Symbol TO-126 1 1. Emitter 2.Collector 3.Base Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 300 V BVCEO Collector-Emitter Voltage 300 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 100 mA ICP Collector Current(Pulse) 200 mA PC Total Device Dissipation, TC=25°C TC=125°C 7 1.2 W W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter RθJC Max. Units 17.8 °C/W Thermal Resistance, Junction to Case * Device mounted on minimum pad size hFE Classification Classification C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 www.fairchildsemi.com 1 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor March 2008 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 300 V BVCEO Collecto- Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 200V, IE = 0 0.1 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 0.1 µA hFE DC Current Gain VCE = 10V, IC = 10mA VCE(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 2mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 20mA, IB = 2mA 1 V fT Current Gain Bandwidth Product VCE = 30V, IC = 10mA 150 MHz Cob Output Capacitance VCB = 30V, f = 1MHz 2.6 pF Cre Reverse Transfer Capacitance VCB = 30V, f = 1MHz 1.8 pF 40 320 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Ordering Information Part Number* Marking Package Packing Method Remarks 2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade KSC3503DSTU C3503D TO-126 TUBE hFE1 D grade KSC3503ESTU C3503E TO-126 TUBE hFE1 E grade KSC3503FSTU C3503F TO-126 TUBE hFE1 F grade * 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 www.fairchildsemi.com 2 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted 10 IB = 120µA IB = 60µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 20 IB = 100µA 16 IB = 80µA 12 IB = 60µA 8 IB = 40µA IB = 20µA 4 IB = 50µA 8 IB = 40µA 6 IB = 30µA 4 IB = 20µA 2 IB = 10µA IB = 0 IB = 0 0 0 0 2 4 6 8 10 0 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 10V 100 10 10 100 60 80 100 Figure 2. Static Characteristic 1000 1 40 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 1 0.1 20 1000 10 IC = 10 IB 1 VBE(sat) 0.1 VCE(sat) 0.01 0.1 IC[mA], COLLECTOR CURRENT 1 10 100 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 160 100 VCE = 10V f = 1MHz 120 Cob[pF], CAPACITANCE IC[mA], COLLECTOR CURRENT 140 100 80 60 40 10 1 20 0 0.0 0.2 0.4 0.6 0.8 1.0 0.1 0.1 1.2 Figure 5. Base-Emitter On Voltage 10 100 1000 Figure 6. Collector Output Capacitance © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 1 VCB[V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE www.fairchildsemi.com 3 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Typical Characteristics fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Cre[pF], CAPACITANCE f=1MHz 10 1 0.1 0.1 1 10 100 1000 1000 VCE = 30V 100 10 1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Gandwidth Product 1000 8 PC[W], POWER DISSIPATION 0 50 µs IC MAX. 100 DC c o 25 C) 10 = 25 (T a = D C (T IC[mA], COLLECTOR CURRENT 7 IC MAX. (Pulse) 1ms 10ms o C ) 1 1 10 100 5 o Tc=25 C 4 3 2 o TC=125 C 1 0 1000 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE T[ C], TEMPERATURE Figure 9. Safe Operating Area Figure 10. Power Derating © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 6 www.fairchildsemi.com 4 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Typical Characteristics (Continued) 3.45 3.05 8.30 7.70 4.00 3.80 14.20 MAX 3.20 11.20 10.80 1.95 1.55 1.35 1.70 1.50 D 0.85 0.65 3X #1 2.29 FRONT VIEW NOTES: A. B. C. 0.60 0.45 3X 0.254 M SIDE VIEW TOP VIEW 3° 1.00 E PRODUCTION CODE TSSTU TSTU NONE (STD LENGTH) TERMINAL LENGTH "D" 3.45 - 4.05 2.36 - 2.96 TERMINAL LENGTH "E" 6.45-7.45 5.36-6.36 12.76 - 13.36 15.76-16.76 NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS D FOR TERMINAL LENGTH "D", REFER TO TABLE E F. FOR TERMINAL LENGTH "E", REFER TO TABLE DRAWING FILENAME: MKT-TO126AArev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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