MMBT589LT1G

MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications www.onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 STYLE 6 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector −Emitter Voltage VCEO −30 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −1.0 Adc ICM −2.0 A Collector Current − Continuous Collector Current − Peak COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol Max Unit 310 2.5 mW mW/°C PD Thermal Resistance Junction−to−Ambient (Note 1) RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance Junction−to−Ambient (Note 2) RqJA PDsingle Junction and Storage Temperature TJ, Tstg 1 °C/W 403 710 5.7 Total Device Dissipation (Ref. Figure 8) (Single Pulse < 10 sec.) G3 M G G mW mW/°C °C/W 176 575 mW −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ Minimum Pad 2. FR− 4 @ 1.0 X 1.0 inch Pad G3 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBT589LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVMMBT589LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1998 October, 2016 − Rev. 7 1 Publication Order Number: MMBT589LT1/D MMBT589LT1G, NSVMMBT589LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO | −30 − Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −50 − Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − − −0.1 − −0.1 − −0.1 100 100 80 40 − 300 − − − − − −0.25 −0.30 −0.65 − −1.2 − −1.1 100 − − 15 Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −30 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (Figure 1) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = 2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 3) (Figure 3) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = 0.1 A) (IC = −2.0 A, IB = −0.2 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (Figure 2) (IC = −1.0 A, IB = −0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) − V V V fT Output Capacitance (f = 1.0 MHz) MHz Cobo pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% www.onsemi.com 2 MMBT589LT1G, NSVMMBT589LT1G 200 230 210 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = -2.0 V 100 50 VCE = -1.0 V 125°C 190 170 150 25°C 130 110 90 -55°C 70 0 50 0.01 0.001 0.1 1.0 10 1000 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain versus Collector Current Figure 2. DC Current Gain versus Collector Current VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 1.0 0.9 VBE(sat) 0.8 V, VOLTAGE (VOLTS) 100 IC, COLLECTOR CURRENT (AMPS) 1.0 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 0 1.0 100 10 0.8 0.75 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.6 1000 mA 0.4 100 mA 50 mA 10 mA 0 0.1 IC/IB = 10 IC, COLLECTOR CURRENT (mA) 0.8 0.01 0.9 0.85 1000 1.0 0.2 0.95 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 1.0 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current www.onsemi.com 3 10 MMBT589LT1G, NSVMMBT589LT1G IC , COLLECTOR CURRENT (AMPS) 10 SINGLE PULSE TEST AT Tamb = 25°C 1s 10 ms 100 ms 1 ms 100 ms 1.0 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 0.2 0.1 1.0E+00 0.05 0.02 D = 0.01 Rthja , (t) 1.0E-01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response www.onsemi.com 4 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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