MMBTA06WT1G

MMBTA06W, SMMBTA06W, Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SC−70 CASE 419 STYLE 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 4.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board TA = 25°C PD Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient Junction and Storage Temperature RqJA TJ, Tstg MARKING DIAGRAM mW 150 GM MG G °C/W 833 1 −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. GM M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBTA06WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SMMBTA06WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SMMBTA06WT3G SC−70 (Pb−Free) 10,000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 4 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTA06WT1/D MMBTA06W, SMMBTA06W, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 80 − 4.0 − − 0.1 − 0.1 100 100 − − − 0.25 − 1.2 100 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) fT MHz 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 OUTPUT +10 V Vin tr = 3.0 ns OUTPUT RB 0 Vin * CS t 6.0 pF 5.0 mF RL RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 300 200 80 VCE = 2.0 V TJ = 25°C C, CAPACITANCE (pF) 40 100 70 Cibo 20 10 8.0 50 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 4.0 0.1 200 2.0 5.0 10 20 Figure 3. Capacitance 1.0 k 700 500 200 100 70 50 10 1.0 Figure 2. Current−Gain — Bandwidth Product ts tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 0.5 VR, REVERSE VOLTAGE (VOLTS) 300 20 0.2 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) TJ = 25°C 60 I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz MMBTA06W, SMMBTA06W, 5.0 7.0 10 tr 50 100 100 ms 1.0 ms 300 1.0 s TC = 25°C 200 TA = 25°C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 10 1.0 500 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Switching Time Figure 5. Active−Region Safe Operating Area 400 1.0 TJ = 25°C TJ = 125°C 0.8 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN VCE = 1.0 V 25°C -55°C 100 80 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 60 40 0.5 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 1.0 2.0 3.0 5.0 10 20 30 50 100 0 0.5 200 300 500 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages http://onsemi.com 3 200 500 1.0 -0.8 R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBTA06W, SMMBTA06W, TJ = 25°C 0.8 -1.2 IC = 250 mA IC = 100 mA IC = 50 mA IC = 500 mA 0.6 -1.6 0.2 RqVB for VBE -2.0 0.4 IC = 10 mA -2.4 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 -2.8 0.5 50 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient http://onsemi.com 4 500 MMBTA06W, SMMBTA06W, PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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