PZT651T1G

DATA SHEET www.onsemi.com NPN Silicon Planar Epitaxial Transistor PZT651 SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT 4 This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. 1 2 3 SOT−223 CASE 318E−04 STYLE 1 COLLECTOR 2, 4 Features • • • • • High Current The SOT−223 Package can be Soldered Using Wave or Reflow PNP Complement is PZT751T1G S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant BASE 1 EMITTER 3 MARKING DIAGRAM AYW 651 G G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage Rating VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD Storage Temperature Range Junction Temperature Thermal Resistance from Junction−to−Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) W 0.8 6.4 mW/°C Tstg −65 to 150 °C TJ 150 °C Symbol Max Unit RqJA 156 °C/W TL 260 °C 10 Sec THERMAL CHARACTERISTICS Characteristic 1 ORDERING INFORMATION Package Shipping† PZT651T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SPZT651T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum recommended footprint. © Semiconductor Components Industries, LLC, 2011 June, 2022 − Rev. 11 1 Publication Order Number: PZT651T1/D PZT651 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Max 60 − 80 − 5.0 − − 0.1 − 100 75 75 75 40 − − − − − − 0.5 0.3 − 1.0 − 1.2 75 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base−Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Collector−Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE Collector−Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) Current−Gain — Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT − Vdc Vdc Vdc MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0% www.onsemi.com 2 PZT651 TYPICAL CHARACTERISTICS 2.0 300 270 TJ = 125°C 1.6 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 240 1.8 VCE = 2.0 V 210 180 25°C 150 120 90 -55°C 1.4 1.2 1.0 VBE(on) @ VCE = 2.0 V 0.6 60 0.4 30 0.2 0 10 VBE(sat) @ IC/IB = 10 0.8 VCE(sat) @ IC/IB = 10 0 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) 50 10 1.0 0.9 0.8 TJ = 25°C 0.7 0.6 0.5 0.4 0.3 200 500 1.0 A IC, COLLECTOR CURRENT (mA) IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A 0.2 0.1 0 0.05 0.1 0.2 4.0 A 50 100 200 500 10 ms, 1 ms 100 ms 1 ms 1 10 ms 100 ms 0.1 1s 0.01 0.001 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 2.0 A Figure 2. On Voltages IC, COLLECTOR CURRENT (A) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Typical DC Current Gain 100 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Collector Saturation Region Figure 4. Safe Operating Area www.onsemi.com 3 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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