SBAT54XV2T1G

BAT54XV2 Schottky Barrier Diodes These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. www.onsemi.com Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage 2 Symbol Value Unit VR 30 V Symbol Max Unit PD 200 mW 1.57 mW/°C 1 2 ANODE SOD−523 CASE 502 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Thermal Resistance, Junction−to−Ambient RJA 635 °C/W TJ, Tstg −55 to 125 °C Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad. MARKING DIAGRAM 1 JVM G G JV = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAT54XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel BAT54XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel SBAT54XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 February, 2017 − Rev. 11 1 Publication Order Number: BAT54XV2T1/D BAT54XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.3 2.0 A Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF − − − − − 0.22 0.28 0.35 0.39 0.46 0.24 0.32 0.40 0.50 0.80 Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) Figure 1 trr − − 5.0 Reverse Breakdown Voltage (IR = 10 A) V ns 820  +10 V 2k 100 H 0.1 F t IF tp r 0.1 F t IF trr 10% t DUT 50  Output Pulse Generator 50  Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAT54XV2 100 1000 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) TA = 150°C 1 50°C 10 1 25°C 1.0 85°C 25°C 0.1 0.0 0.1 0.2 −40°C 0.3 −55°C 0.4 0.5 100 TA = 125°C 10 TA = 85°C 1.0 0.01 0.6 TA = 25°C 0.1 0 5 VF, FORWARD VOLTAGE (VOLTS) IFSM, FORWARD SURGE MAX CURRENT (A) CT, TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 5 10 15 20 30 25 20 Figure 3. Leakage Current 14 0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage 0 10 25 30 25 Based on square wave currents TJ = 25°C prior to surge 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms) Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 3 1000 BAT54XV2 PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X L 2X 0.40 L2 BOTTOM VIEW 1.80 0.48 PACKAGE OUTLINE 2X MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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