SS8050CTA

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark Package Packing Method SS8050BBU S8050 TO-92 3L Bulk SS8050CBU S8050 TO-92 3L Bulk SS8050CTA S8050 TO-92 3L Ammo SS8050DBU S8050 TO-92 3L Bulk SS8050DTA S8050 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature -65 to 150 °C © 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0 www.fairchildsemi.com SS8050 — NPN Epitaxial Silicon Transistor November 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD Parameter Value Power Dissipation 1 W Derate Above 25°C 8 mW/°C 125 °C/W Thermal Resistance, Junction-to-Ambient RθJA Unit Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 40 V BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0 25 V BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V ICBO Collector Cut-Off Current VCB = 35 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 100 nA 100 nA VCE = 1 V, IC = 5 mA 45 DC Current Gain VCE = 1 V, IC = 100 mA 85 VCE = 1 V, IC = 800 mA 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 1.2 V VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 10 mA 1 V Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Current Gain Bandwidth Product VCE = 10 V, IC = 50 mA hFE1 hFE2 hFE3 Cob fT 300 9.0 pF 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 © 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0 www.fairchildsemi.com 2 SS8050 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) 1000 0.5 0.4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 1V IB = 3.0mA IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 Figure 1. Static Characteristic 100 1000 Figure 2. DC Current Gain 10000 100 IC = 10 IB VCE = 1V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) 1000 100 VCE(sat) 10 0.1 1 10 100 10 1 0.1 0.0 1000 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 4. Base-Emitter On Voltage Figure 3. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 1000 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz Cob [pF], CAPACITANCE 1 100 10 1 1 10 100 10 1 100 1 VCB [V], COLLECTOR-BASE VOLTAGE 10 100 400 IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance © 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0 VCE = 10V Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 3 SS8050 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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