2SD1819G0L

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1218G ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the magazine pacing. • Code SMini3-F2 • Marking Symbol: Z • Pin Name 1: Base 2: Emitter 3: Collector di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V 100 mA 200 mA 150 mW 150 °C −55 to +150 °C Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol ce /D isc on tin Parameter Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 2 mA 160 hFE2 VCE = 2 V, IC = 100 mA 90 VCE(sat) IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF Ma int en an Collector-base voltage (Emitter open) Collector-emitter saturation voltage Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob V 0.1 µA 100 µA 460  0.3 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S No rank hFE1 160 to 260 210 to 340 290 to 460 160 to 460 Marking symbol ZQ ZR ZS Z Product of no-rank is not classified and have no marking symbol for rank. Publication date: May 2007 SJC00372AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1819G PC  Ta IC  VCE 1 200 Ta = 25°C VCE = 10 V Ta = 25°C IB = 160 µA 1 000 50 120 40 120 µA 100 µA 30 80 µA Base current IB (µA) 140 µA Collector current IC (mA) 160 800 600 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) IB  VBE 60 200 80 10 80 120 160 IC  VBE VCE = 10 V 8 120 25°C Ta = 75°C −25°C 80 40 VCE = 10 V Ta = 25°C 160 120 80 40 0.4 0.8 1.2 1.6 2.0 hFE  IC 600 int Ma 300 Ta = 75°C 25°C −25°C 200 100 1 10 Collector current IC (mA) 100 200 400 600 800 1 000 0 fT  I E VCB = 10 V Ta = 25°C 240 180 120 60 0 − 0.1 −1 −10 Emitter current IE (mA) SJC00372AED 0.2 0.4 0.6 0.8 −100 1.0 Base-emitter voltage VBE (V) VCE(sat)  IC 100 IC / IB = 10 10 1 25°C 0.1 0.01 0.1 Ta = 75°C −25°C 1 10 Collector current IC (mA) Base current IB (µA) 300 Transition frequency fT (MHz) en an VCE = 10 V 500 0 0.1 0 ce /D isc on tin Base-emitter voltage VBE (V) 400 0 ue 0 0 10 240 Collector current IC (mA) Collector current IC (mA) 6 200 160 Forward current transfer ratio hFE 4 IC  I B 200 2 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 0 0 Collector-emitter saturation voltage VCE(sat) (V) 40 200 20 µA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 0 400 40 µA 40 0 60 µA 20 100 +0.05 ±0.050 0.30 −0.02 3 2 (0.65) 0.13 −0.02 1.30 ±0.10 ea 0.90 ±0.10 ±0.10 pla nc 2.10 ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan win(5°)g ww wi co on ce c fo .se ng ntin tin ty e ty ur 0.425 mi UR ue ued pe pe Pro d L co du n.p abo typ type ct life an ut e d as lat cy on es cle t i c.c in sta (0.49) o.j for ge p/e ma . n/ tio n. 1.25 ±0.10 2.00 ±0.20 Pl di ue isc on tin (5°) /D (0.65) (0.89) ce an 1 0 to 0.10 en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm +0.05 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.