BGU8L1UKAZ

%* 8 / 8 . BGU8L1UK SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 19 May 2015 Product data sheet 1. Product profile 1.1 General description The BGU8L1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8L1UK requires one external matching inductor. The BGU8L1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 16 dB gain at a noise figure of 0.7 dB. During high power levels, it temporarily increases its bias current to improve sensitivity. The BGU8L1UK is optimized for 728 MHz to 960 MHz. 1.2 Features and benefits „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ Operating frequency from 728 MHz to 960 MHz Noise figure (NF) = 0.7 dB Gain = 16 dB High input 1 dB compression point of 6 dBm High in band IP3i of 2 dBm Supply voltage 1.5 V to 3.1 V Self shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 4.7 mA Power-down mode current consumption < 1 PA Integrated temperature stabilized bias for easy design Require only one input matching inductor Output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Extremely small Wafer Level Chip Scale Package (WLCSP) 0.65 u 0.44 u 0.2 mm; 6 solder bumps; 0.22 mm bump pitch „ 180 GHz transit frequency - SiGe:C technology 1.3 Applications „ LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules. BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE 1.4 Quick reference data Table 1. Quick reference data f = 882 MHz; VCC = 2.8 V; VI(ENABLE) t 0.8 V; Tamb = 25 qC; input matched to 50 : using a 18 nH inductor; unless otherwise specified. Symbol Parameter VCC ICC Min Typ Max Unit supply voltage 1.5 - 3.1 V supply current - 4.7 - mA [1] - 16.0 - dB [1][2] - 0.7 dB - 6 - dBm - 2 - dBm Gp power gain NF noise figure Conditions Pi(1dB) input power at 1 dB gain compression [1] IP3i input third-order intercept point [1] [1] E-UTRA operating band 5 (869 MHz to 894 MHz). [2] PCB losses are subtracted. - 2. Pinning information Table 2. Pinning Pin Description 1 ENABLE 2 RF_IN 3 GND_RF Simplified outline Graphic symbol   4 RF_OUT 5 VCC 6 GND           DDD Bump side view 3. Ordering information Table 3. Ordering information Type number BGU8L1UK Package Name Description Version WLCSP6 wafer level chip-size package; 6 balls; 0.65 u 0.44 u 0.29 mm WLCSP6 4. Marking Table 4. Type number Marking code BGU8L1UK single character, indicating assembly month.[1] [1] BGU8L1UK Product data sheet Marking codes Month code see Table 5. All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE Table 5. Calender marking month code Asterisk (*) in Figure 1 is replaced by character in table. Year [1] Month J F 2014 Y Z b d f 2015 A B C D E 2016 M N O P Q R [1] M A M J J A S O N D h 3 4 5 6 7 9 F G H I J K L S T U V W X Rotates every 3 years. DDD Pin 1 location: the marking stripes below character indicate the side where pin 1 is located. Fig 1. Marking code description example 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCC supply voltage RF input AC coupled VI(ENABLE) input voltage on pin ENABLE VI(RF_IN) input voltage on pin RF_IN VI(RF_OUT) input voltage on pin RF_OUT Pi input power Ptot total power dissipation Min Max Unit [1] 0.5 +5.0 V VI(ENABLE) < VCC + 0.6 V [1][2] 0.5 +5.0 V DC, VI(RF_IN) < VCC + 0.6 V [1][2] 0.5 +5.0 V [1][2][3] 0.5 +5.0 V - 10 dBm - 55 mW DC, VI(RF_OUT) < VCC + 0.6 V [1] Tsp d 130 qC Tstg storage temperature 65 +150 qC Tj junction temperature - 150 qC VESD electrostatic discharge voltage Human Body Model (HBM) According to ANSI/ESDA/JEDEC standard JS-001 - r2 kV Charged Device Model (CDM) According to JEDEC standard JESD22-C101C - r1 kV [1] Stressed with pulses of 200 ms in duration. [2] Warning: due to internal ESD diode protection, the applied DC voltage shall not exceed VCC + 0.6 V and shall not exceed 5.0 V in order to avoid excess current. [3] The RF output is AC coupled through internal DC blocking capacitors. BGU8L1UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE 6. Recommended operating conditions Table 7. Operating conditions Symbol Parameter VCC supply voltage Conditions Tamb ambient temperature VI(ENABLE) input voltage on pin ENABLE Min Typ Max Unit 1.5 - 3.1 V 40 +25 +85 qC OFF state - - 0.3 V ON state 0.8 - - V 7. Thermal characteristics Table 8. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 225 K/W 8. Characteristics Table 9. Characteristics at VCC = 1.8 V 728 MHz d f d 960 MHz; VCC = 1.8 V; VI(ENABLE) t 0.8 V; Tamb = 25 qC; input matched to 50 : using a 18 nH inductor; unless otherwise specified. Symbol Parameter ICC supply current Gp power gain Conditions Min Typ Max Unit VI(ENABLE) t 0.8 V - 4.3 - VI(ENABLE) d 0.3 V RLin RLout ISL NF Pi(1dB) input return loss output return loss isolation noise figure input power at 1 dB gain compression BGU8L1UK Product data sheet mA - - 1 PA f =740 MHz [1] - 16.5 - dB f = 882 MHz [2] - 16.0 - dB f = 943 MHz [3] - 15 - dB f =740 MHz [1] - 8 - dB f = 882 MHz [2] - 9 - dB f = 943 MHz [3] - 8 - dB f =740 MHz [1] - 12 - dB f = 882 MHz [2] - 12 - dB f = 943 MHz [3] - 12 - dB f =740 MHz [1] - 25 - dB f = 882 MHz [2] - 25 - dB f = 943 MHz [3] - 25 - dB f =740 MHz [1][4] - 0.7 - dB f = 882 MHz [2][4] - 0.7 - dB f = 943 MHz [3][4] - 0.8 - dB f =740 MHz [1] - 12 - dBm f = 882 MHz [2] - 10 - dBm f = 943 MHz [3] - 9 - dBm All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE Table 9. Characteristics at VCC = 1.8 V …continued 728 MHz d f d 960 MHz; VCC = 1.8 V; VI(ENABLE) t 0.8 V; Tamb = 25 qC; input matched to 50 : using a 18 nH inductor; unless otherwise specified. Symbol Parameter Conditions IP3i f =740 MHz [1] - 6 - dBm f = 882 MHz [2] - 4 - dBm f = 943 MHz [3] - 3 - dBm input third-order intercept point Min Typ Max Unit K Rollett stability factor 1 - - ton turn-on time time from VI(ENABLE) ON, to 90 % of the gain - - 3 Ps toff turn-off time time from VI(ENABLE) OFF, to 10 % of the gain - - 1 Ps [1] E-UTRA operating band 17 (734 MHz to 746 MHz). [2] E-UTRA operating band 5 (869 MHz to 894 MHz). [3] E-UTRA operating band 8 (925 MHz to 960 MHz). [4] PCB losses are subtracted BGU8L1UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE Table 10. Characteristics at VCC = 2.8 V 728 MHz d f d 960 MHz; VCC = 2.8 V; VI(ENABLE) t 0.8 V; Tamb = 25 qC; input matched to 50 : using a 18 nH inductor; unless otherwise specified. Symbol Parameter supply current ICC power gain Gp RLin RLout ISL input return loss output return loss isolation NF noise figure Pi(1dB) input power at 1 dB gain compression input third-order intercept point IP3i Conditions Min Typ Max Unit VI(ENABLE) t 0.8 V - 4.7 - mA VI(ENABLE) d 0.3 V - - 1 PA f =740 MHz [1] - 16.5 - dB f = 882 MHz [2] - 16.0 - dB f = 943 MHz [3] - 15.5 - dB f =740 MHz [1] - 8 - dB f = 882 MHz [2] - 10 - dB f = 943 MHz [3] - 8 - dB f =740 MHz [1] - 12 - dB f = 882 MHz [2] - 12 - dB f = 943 MHz [3] - 12 - dB f =740 MHz [1] - 25 - dB f = 882 MHz [2] - 25 - dB f = 943 MHz [3] - 25 - dB f =740 MHz [1][4] - 0.7 - dB f = 882 MHz [2][4] - 0.7 - dB f = 943 MHz [3][4] - 0.8 - dB f =740 MHz [1] - 7 - dBm f = 882 MHz [2] - 6 - dBm f = 943 MHz [3] - 5 - dBm f =740 MHz [1] - 1 - dBm f = 882 MHz [2] - 2 - dBm f = 943 MHz [3] - 1 - dBm K Rollett stability factor 1 - - ton turn-on time time from VI(ENABLE) ON, to 90 % of the gain - - 3 Ps toff turn-off time time from VI(ENABLE) OFF, to 10 % of the gain - - 1 Ps [1] E-UTRA operating band 17 (734 MHz to 746 MHz). [2] E-UTRA operating band 5 (869 MHz to 894 MHz). [3] E-UTRA operating band 8 (925 MHz to 960 MHz). [4] PCB losses are subtracted BGU8L1UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE 9. Package outline :/&63ZDIHUOHYHOFKLSVL]HSDFNDJHEDOOV[[PP $ ' %*8/8. % $ EDOO$ LQGH[DUHD $ ( $ GHWDLO; H & H Y Z E & $ % & \ & \ % H $ EDOO$ LQGH[DUHD    ;  PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ PD[  QRP  PLQ  $ $ E          ' ( H H H Y Z \ \              ZOFVSBEJXOXNBSR 2XWOLQH YHUVLRQ 5HIHUHQFHV ,(& -('(& -(,7$ ,VVXHGDWH   %*8/8. Fig 2. (XURSHDQ SURMHFWLRQ Package outline BGU8L1UK (WLCSP6) BGU8L1UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 7 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 11. Abbreviations Acronym Description ESD ElectroStatic Discharge E-UTRA Evolved Universal Terrestrial Radio Access HBM Human Body Model LTE Long Term Evolution MMIC Monolithic Microwave Integrated Circuit PCB Printed Circuit Board SiGe:C Silicon Germanium Carbon 12. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BGU8L1UK v.1 20150519 Product data sheet - - BGU8L1UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 8 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BGU8L1UK Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 9 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE Bare die — All die are tested on compliance with their related technical specifications as stated in this data sheet up to the point of wafer sawing and are handled in accordance with the NXP Semiconductors storage and transportation conditions. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post-packing tests performed on individual die or wafers. NXP Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, NXP Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. All die sales are conditioned upon and subject to the customer entering into a written die sale agreement with NXP Semiconductors through its legal department. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGU8L1UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 10 of 11 BGU8L1UK NXP Semiconductors SiGe:C Low Noise Amplifier MMIC for LTE 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Handling information. . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2015. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 May 2015 Document identifier: BGU8L1UK