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NX30P0121UKZ

NX30P0121UKZ

  • 厂商:

    NXP(恩智浦)

  • 封装:

    UFBGA12

  • 描述:

    IC PWR SWITCH N-CHAN 1:1 12WLCSP

  • 数据手册
  • 价格&库存
NX30P0121UKZ 数据手册
NX30P0121UK High-voltage back-to-back OVP switch Rev. 1.0 — 19 June 2019 1 Product data sheet General description The NX30P0121UK is an advanced 3A unidirectional power switch. It includes Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO) in VOUT, OVLO adjustable pin and over-temperature protection circuits. It is designed to automatically isolate the power switch terminals when a fault condition occurs. Both VIN and VOUT pins have 29V tolerance in shutdown mode. The device has a default internal 14.5V overvoltage protection threshold in VOUT and adjustable OVP threshold by resistor divider from VOUT. ISNS pin is current source output proportional to input current from VIN to VOUT when device is enabled. The device is enabled by external EN pin. When EN pin is driven LOW, the device is in shutdown mode where all internal circuitries are off and OVP switch is off. When EN pin is driven HIGH and VIN is valid, the OVP switch soft starts after VIN debounce time to limit the inrush current. NX30P0121UK is offered in a small 12 bumps, 1.65 x 1.25 x 0.525 mm WLCSP package. 2 Features and benefits • • • • • • • • Wide supply voltage range from 2.5V to 20V Switch maximum 3A continuous current 29V tolerance on both VIN and VOUT pin 54mΩ (typical) Low ON resistance Adjustable overvoltage protection threshold, internal 14.5V VOUT OVLO Built in slew rate control for inrush current limit ISNS to monitor input current from VIN to VOUT Protection circuitry – Over-temperature protection – Overvoltage protection – Undervoltage lockout • ESD protection – HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV – CDM (JESD22-C101E) • Specified from -40°C to +85°C 3 Applications • Smartphone • Tablet • Other portable electronic devices NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch 4 Ordering information Table 1. Ordering information Type number NX30P0121UK Topside marking Package Name Description Version N21 WLCSP12 wafer level chip scale package; 12 bumps; 0.4 mm pitch; 1.65 mm x 1.25 mm x 0.525 mm body (backside coating included) SOT1390-8 4.1 Ordering options Table 2. Ordering options Type number Orderable part number Package Packing method Minimum order quantity Temperature NX30P0121UK NX30P0121UKZ WLCSP12 REEL 7" Q1 DP CHIPS 4000 Tamb = -40 °C to +85 °C 5 Functional diagram VIN VOUT ISNS OVLO GND EN aaa-031747 Figure 1. Logic symbol NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 2 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch NX30P0121 VIN VOUT UVLO OVLO OVLO ISNS CONTROL EN SoftStart GND OTP 1 MΩ aaa-031748 Figure 2. Internal block diagram 6 Pinning information 6.1 Pinning Ball A1 mark Ball A1 mark 1 2 3 3 2 1 A OVLO OVL VIN VOUT VOUT VIN OVLO VLO A B EN VIN VOUT VOUT VIN EN B C ISNS VIN VOUT VOUT VIN ISNS C D GND VIN VOUT VOUT VIN GND D Pin map; bump-side down Pin map; bump-side up aaa-031750 Figure 3. NX30P0121 Pin map, WLCSP12 6.2 Pin description Table 3.  Pin description NX30P0121 Product data sheet Symbol Pin Type Description VIN A2, B2, C2, D2 P Input power pin. Connect bypass capacitor 1uF to GND All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 3 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Pin description 7 Symbol Pin Type Description VOUT A3, B3, C3, D3 P Output Power pin, Connect bypass capacitor 1uF to GND EN B1 DIN Enable pin. Drive HIGH to enable device. ISNS C1 AO 1,053:1 current mirror of input current from VIN to VOUT. Must connect a resistor on ISNS pin to GND to monitor the input current. OVLO A1 AIN Adjustable OVLO threshold with external Resistor divider GND D1 P Ground Functional description Table 4. Function table EN VIN VOUT Switch ISNS Operation L X X OFF Hi-Z Shutdown mode H < VINUVLO X OFF Hi-Z Standby mode, Undervoltage lockout H X > VOUTOVLO OFF Hi-Z Standby mode, Overvoltage lockout H > VINUVLO < VOUTOVLO ON ON Switch ON mode 7.1 EN pin When EN is driven LOW, the device enters shutdown mode regardless of VIN and VOUT voltage. All internal circuitries are off to minimize current consumption and OVP switch is OFF. When EN is driven HIGH, the OVP switch is ready to turn on depending on VIN and VOUT condition. if VIN is above VINUVLO and VOUT is lower than VOUTOVLO, the device soft starts after VIN debounce timer is expired, to reduce in-rush current. There is an internal 1MΩ pull-down resistor in EN pin, which secure EN status in case EN pin is float. This pin has +29V tolerance. 7.2 Undervoltage Lockout (UVLO) When EN is driven HIGH and VIN < VINUVLO, the UVLO circuit disables the power MOSFET. Once VIN exceeds VINUVLO and no other protection circuit is active, the channel MOSFET state is controlled by the EN pin. 7.3 Overvoltage Lockout (OVLO) When EN is driven HIGH and VOUT is above VOUTOVLO, the OVLO circuit disables the power MOSFET within tdis(OVP). Once VOUT drops below VOUTOVLO and no other protection circuit is active, the power MOSFET resumes operation. OVLO pin is used to adjust the overvoltage protection threshold. The default overvoltage threshold is 14.5V when OVLO pin is shorted to GND. Connecting a resistor divider to the OVLO pin (see Figure 4) adjusts the overvoltage threshold from 4V to 20V using below equation. VOUTOVLO = Vth(OVLO) X ( R1 + R2 )/(R2) NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 4 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Where Vth(OVLO) = 1.227V R1 is recommended to use 1MΩ resistance. When the voltage on OVLO pin is below 0.1V, the device defaults to the 14.5V OVP threshold. VOUT 1 uF R1 OVLO OVLO R2 0.1 V aaa-031751 Figure 4. External OVLO adjustment 7.4 Over-temperature protection When EN is HIGH and the device temperature exceeds 145°C the Over-Temperature Protection (OTP) circuit disables the power MOSFET. Once the device temperature decreases below 115 °C and no other protection circuit is active, the state of the OVP MOSFET is controlled by the EN pin again. 7.5 ISNS pin The ISNS pin is current source output having 1,053:1 ratio with input current from VIN to VOUT. It requires a resistor from ISNS to GND to monitor input current. When device is disabled, its output is high impedance. The ISNS voltage is determined by below equation. RISNS is recommended to be +/-1% tolerant. VISNS = ( IIN x RISNS ) / 1,053 NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 5 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch 7.6 Timing diagram VIN ten including 5 ms debounce time 0V VIN UVLO 90% ten including 5 ms debounce time 90% VOUT 10% 0V 10% 10% tTLH EN tON tOFF tON aaa-031752 Figure 5. Timing diagram at start up VOUTOVLO VIN tdis(OVP) VINUVLO 0V ten VOUTOVLO VIN 90 % 90 % VOUT 0V EN 10 % tTLH External power is driven on VOUT tON 10 % 10 % tTLH tON tOFF aaa-031753 Figure 6. Timing diagram when VOUT is driven by external power 8 Application diagram The NX30P0121UK is typically used to add wireless charger path in single input switching mode charger application. If wireless charger is used, then NX30P0121UK bridge wireless charger output to the switching mode charger, protecting wireless charger from up to 29V which could be from VBUS. For best performance, it is recommended to keep input and output traces short and wide, and capacitors as close to the device as possible. Regarding thermal performance, it is recommended to increase the PCB area around VIN and VOUT pins. NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 6 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch VOUT VIN Wireless charger CIN NX30P0121 ISNS ILIM EN R3 R1 COUT OVLO GND R2 DC_IN_EN DC_IN_PSNS SW Charger DC_IN_PON USB Con MID_CHG USB_IN VBUS Buck CHG aaa-031757 Figure 7. NX30P0121UK application diagram 9 Limiting values Table 5. Limiting values (absolute maximum ratings) Symbol Parameter VI Conditions Min Max Unit Input voltage (with respect VIN to GND) VOUT -0.5 +29 V -0.5 +29 V OVLO -0.5 VOUT V EN -0.5 +29 V ISNS -0.5 +6 V IIK Input clamping current EN; VI < -0.5 V -50 - mA ISK Switch clamping current VIN, VOUT; VI < -0.5 V -50 - mA ISW Continuous switch current Tamb = 85 °C - +3.0 A Tamb = 105 °C - +3.0 A 130μs pulse, 5% duty cycle at 85 °C - +10 A -65 +150 °C - 1.45 W Peak switch current Tstg Storage temperature Ptot Total power dissipation Tamb = 25 °C 10 Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter Conditions Min Max Unit VI input voltage (with respect to GND) VIN 2.5 20 V VOUT 2.5 20 V EN 0 20 V NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 7 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Symbol Parameter Conditions Min Max Unit ISNS 0 +6 V Tj(max) Maximum junction temperature -40 +125 °C Tamb Ambient temperature -40 +85 °C 11 Thermal characteristics Table 7. Thermal characteristics Symbol Rth(j-a) [1] [2] Parameter Conditions [1] [2] thermal resistance from junction to ambient Typ Unit 70.8 °C/W Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is solely for a thermal performance comparison of one package to another in a standardized specified environment. It is not meant to predict the performance of a package in an application-specific environment Thermal test board meets JEDEC specification for this package (JESD51-9). 12 Electrical characteristics 12.1 Static characteristics Table 8. Static characteristics At recommended input voltages and Tamb = -40°C to +85°C; voltages are referenced to GND (ground = 0 V); unless otherwise specified. Symbol Parameter Tamb = -40 °C to +85 °C Unit Tamb = 25 °C Conditions Min Typ Max Min Max EN = 1.8V, VIN = 5V, IO = 0A - 110 - - 170 μA EN = 1.8V, VIN = 14V, IO = 0A - 140 - - 220 μA VIN shutdown leakage current EN = 0V, VIN = 5.0V; VOUT = 0V - 5 - 2 10 μA VOUT shutdown Leakage current EN = 0V, VOUT= 5.0 V, VIN = 0 V - 1 3 - 5 μA IOVLO OVLO input leakage Current VOVLO=Vth(OVLO) - 0.5 - - 25 nA RON ON resistance VIN = 5.0 V - 54 66 - 79 mΩ VIN = 14 V - 54 66 - 79 mΩ VINUVLO VIN UVLO voltage VIN Rising; EN = 1.8V 2.2 2.37 2.55 2.1 2.6 V VINhys(UVLO) VIN UVLO hysteresis voltage VIN Falling - 110 - - 140 mV VOUTOVLO Default overvoltage VOUT Rising; EN = 1.8V lockout voltage OVLO short to GND - 14.5 - 13.5 15.3 V Iq ISHDN VIN quiescent current NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 8 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Symbol Parameter Tamb = -40 °C to +85 °C Unit Tamb = 25 °C Conditions VOUT Falling; EN = 1.8V OVLO short to GND Min Typ Max Min Max - 14.2 - 13.2 15.0 V 1.163 1.227 1.288 1.16 1.3 V Vth(OVLO) external OVLO set threshold voltage VOUT= 2.5 V to 20 V; EN = 1.8V VIH HIGH-level input voltage EN pin; VIN = 2.5 V to 20 V 1.2 - - 1.2 - V VIL LOW-level input voltage EN pin; VIN = 2.5 V to 20 V - - 0.4 - 0.4 V Rpd pull-down resistance EN - 1 - 0.7 1.4 MΩ CI input capacitance EN pin; VIN = 5V - 2 - - - pF K Current sensing ratio IIN / IISNS , IIN = 1A, VIN = 5V, EN =1.8V 1050 1010 1090 A/A VISNS ISNS voltage IIN = 2A, RISNS = 400Ω, VIN = 5V, VIN > 3.0V 0.762 V VISNS ISNS voltage IIN = 1A, RISNS = 806Ω, VIN = 5V, VIN > 3.0V 0.767 V VISNS ISNS voltage IIN = 0.5A, RISNS = 806Ω, VIN = 5V, VIN > 3.0V 0.384 V Tth(OTP) Over temperature EN = 1.8V shutdown threshold - 145 - - - °C Tth(OTP)Hys Over temperature shutdown threshold EN = 1.8V hysteresis - 30 - - - °C 12.2 Dynamic characteristics Table 9. Dynamic characteristics Symbol ten tTLH Parameter Enable Time VOUT rise time Conditions Min Typ Max Min Max 3.5 5.5 8.0 3.0 11.0 ms VIN = 5 V - 1.8 - - - ms VIN =14 V - 3.0 - - - ms - 70 - - - ns From EN to VOUT = 10% of VIN; VIN = 5 V; COUT =10μF; RLoad = 100Ω includes 2ms VIN debounce time VOUT from 10% to 90% of VIN; COUT = 10μF; ROUT = 100Ω tdis(OVP) OVP turn off time From VOUT > VOUTOVLO to VVIN = 80% of VOUT; Rload_VIN = 100Ω,;CIN = 0uF; VIN = 12V; OVLO pin short to GND ton turn-on time EN to VOUT= 90% of VIN NX30P0121 Product data sheet Tamb = -40 °C to +85 °C Unit Tamb = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 9 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Symbol Parameter Tamb = -40 °C to +85 °C Unit Tamb = 25 °C Conditions Min Typ Max Min Max VIN= 5.0 V - 7.5 - 5.0 10.0 ms VIN = 14.0 V - 9.0 - - - ms VIN = 5.0 V; COUT = 10μF; ROUT = 100Ω - 2.6 4.0 - 4.0 ms VIN = 14 V; COUT = 10μF; ROUT = 100Ω - 2.6 - - - ms EN to VOUT = 10% VIN toff turn-off time 12.3 Graphs 10 IOUT 9 (uA) 8 7 6 5 4 3 2 1 0 aaa-032267 25 20 15 10 0 5 10 15 20 25 30 VOUT[V] VIN = 0V ISNS Accuracy 0 5 10 15 20 25 30 VIN [V] Figure 9. VIN leakage current (EN = 0V) aaa-032269 3% 2% 1% 0% -1% -2% -3% 0.0 0.5 1.0 VIN = 5V 1.5 2.0 IIN [A] VIN = 9V 2.5 3.0 VIN = 12V Figure 10. ISNS accuracy (RISNS = 806Ω) Product data sheet 5 VIN = 5V Figure 8. VOUT leakage current (EN = 0V) NX30P0121 aaa-032268 40 IIN (uA)35 30 aaa-032270 Figure 11. Startup (RISNS = 806Ω) All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 10 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch aaa-032271 Figure 12. ISNS response time on VIN change NX30P0121 Product data sheet aaa-032272 Figure 13. ISNS response time on load change All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 11 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch 13 Package outline Figure 14. Package outline SOT1390-8 (WLCSP12) (1 of 2) NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 12 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Figure 15. Package outline SOT1390-8 (WLCSP12) (2 of 2) NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 13 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch 14 Soldering Figure 16. Reflow soldering footprint for SOT1390-8 NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 14 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Figure 17. Reflow soldering footprint part2 for WLCSP12 (SOT1390-8) NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 15 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Figure 18. Reflow soldering footprint part3 for WLCSP12 (SOT1390-8) NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 16 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch 15 Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes NX30P0121 v.1.0 20190619 Product data sheet - - NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 17 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch 16 Legal information 16.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without NX30P0121 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 18 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. NX30P0121 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 19 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Tables Tab. 1. Tab. 2. Tab. 3. Tab. 4. Tab. 5. Ordering information ..........................................2 Ordering options ................................................2 ............................................................................ 3 Function table ....................................................4 Limiting values (absolute maximum ratings) ......7 Tab. 6. Tab. 7. Tab. 8. Tab. 9. Tab. 10. Recommended operating conditions ................. 7 Thermal characteristics ..................................... 8 Static characteristics ......................................... 8 Dynamic characteristics .................................... 9 Revision history ...............................................17 Fig. 12. Fig. 13. Fig. 14. ISNS response time on VIN change ................11 ISNS response time on load change ...............11 Package outline SOT1390-8 (WLCSP12) (1 of 2) .................................................................12 Package outline SOT1390-8 (WLCSP12) (2 of 2) .................................................................13 Reflow soldering footprint for SOT1390-8 ....... 14 Reflow soldering footprint part2 for WLCSP12 (SOT1390-8) ..................................15 Reflow soldering footprint part3 for WLCSP12 (SOT1390-8) ..................................16 Figures Fig. 1. Fig. 2. Fig. 3. Fig. 4. Fig. 5. Fig. 6. Fig. 7. Fig. 8. Fig. 9. Fig. 10. Fig. 11. Logic symbol ..................................................... 2 Internal block diagram .......................................3 NX30P0121 Pin map, WLCSP12 ...................... 3 External OVLO adjustment ............................... 5 Timing diagram at start up ................................ 6 Timing diagram when VOUT is driven by external power ...................................................6 NX30P0121UK application diagram .................. 7 VOUT leakage current (EN = 0V) ................... 10 VIN leakage current (EN = 0V) ....................... 10 ISNS accuracy (RISNS = 806Ω) ..................... 10 Startup (RISNS = 806Ω) ................................. 10 NX30P0121 Product data sheet Fig. 15. Fig. 16. Fig. 17. Fig. 18. All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 19 June 2019 © NXP B.V. 2019. All rights reserved. 20 / 21 NX30P0121UK NXP Semiconductors High-voltage back-to-back OVP switch Contents 1 2 3 4 4.1 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 8 9 10 11 12 12.1 12.2 12.3 13 14 15 16 General description ............................................ 1 Features and benefits .........................................1 Applications .........................................................1 Ordering information .......................................... 2 Ordering options ................................................ 2 Functional diagram ............................................. 2 Pinning information ............................................ 3 Pinning ............................................................... 3 Pin description ................................................... 3 Functional description ........................................4 EN pin ................................................................4 Undervoltage Lockout (UVLO) ...........................4 Overvoltage Lockout (OVLO) ............................ 4 Over-temperature protection ..............................5 ISNS pin ............................................................ 5 Timing diagram ..................................................6 Application diagram ............................................6 Limiting values .................................................... 7 Recommended operating conditions ................ 7 Thermal characteristics ......................................8 Electrical characteristics ....................................8 Static characteristics ..........................................8 Dynamic characteristics .....................................9 Graphs ............................................................. 10 Package outline .................................................12 Soldering ............................................................14 Revision history ................................................ 17 Legal information .............................................. 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2019. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 June 2019 Document identifier: NX30P0121
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