PBSS4350D
50 V low VCEsat NPN transistor
9 November 2023
Product data sheet
1. General description
NPN low VCEsat transistor in a SOT457 (SC-74) plastic package.
PNP complement: PBSS5350D
2. Features and benefits
•
•
•
•
•
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat generation
Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Supply line switching circuits
Battery management applications
DC/DC convertor applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp drivers)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
50
V
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
5
A
RCEsat
collector-emitter
saturation resistance
IC = 2 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
110
145
mΩ
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
C
collector
2
C
collector
3
B
base
4
E
emitter
5
C
collector
6
C
collector
Simplified outline
6
5
Graphic symbol
C
4
B
1
2
3
TSOP6 (SOT457)
E
sym014
PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
PBSS4350D
Name
Description
Version
TSOP6
plastic, surface-mounted package (SC-74; TSOP6); 6
leads
SOT457
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS4350D
43
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
3
A
ICM
peak collector current
-
5
A
IBM
peak base current
-
1
mA
Ptot
total power dissipation
[1]
-
600
mW
[2]
-
750
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
[1]
[2]
Conditions
thermal resistance from in free air
junction to ambient
Min
Typ
Max
Unit
[1]
-
-
208
K/W
[2]
-
-
160
K/W
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
PBSS4350D
Product data sheet
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Nexperia B.V. 2023. All rights reserved
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 50 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
200
-
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
200
-
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
100
-
-
IC = 500 mA; IB = 50 mA; Tamb = 25 °C
-
-
90
mV
IC = 1 A; IB = 50 mA; Tamb = 25 °C
-
-
170
mV
IC = 2 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
290
mV
-
110
145
mΩ
-
-
1.2
V
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation
voltage
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
-
-
1.1
V
fT
transition frequency
VCE = 5 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
-
30
pF
mgw175
600
hFE
500
(1)
mgw176
1.2
VBE
(V)
1.0
(1)
400
0.8
(2)
300
(2)
0.6
(3)
200
0.4
(3)
100
0
10- 1
0.2
1
10
102
0
10- 1
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 1.
Product data sheet
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 C
(3) Tamb = 150 °C
DC current gain; typical values
PBSS4350D
1
Fig. 2.
Base-emitter voltage as a function of collectorcurrent; typical values
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
mgw181
103
mgw178
1.2
VBEsat
(V)
1.0
VCEsat
(mV)
102
(1)
0.8
(2)
(1)
0.6
(2)
(3)
(3)
0.4
10
0.2
1
10- 1
1
10
102
0
10- 1
103
104
IC (mA)
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 3.
1
Collector-emitter saturation as a function of
collector current; typical values.
Fig. 4.
mgw179
1200
IC
(mA)
mgw180
5
(1)
IC
(A)
(1)
1000
Base-emitter saturation voltage as a function of
collector current; typical values
(2)
4
(3)
(8)
(4)
800
(2)
(3)
(4)
(5)
(6)
(7)
(5)
3
(9)
(6)
600
(7)
(10)
2
(8)
400
(9)
(10)
200
1
(11)
(12)
0
0
0.4
0.8
1.2
0
1.6
2
VCE (V)
Tamb = 25 °C
(1) IB = 3.96 mA
(2) IB = 3.63 mA
(3) IB = 3.30 mA
(4) IB = 2.97 mA
(5) IB = 2.64 mA
(6) IB = 2.31 mA
(7) IB = 1.98 mA
(8) IB = 1.65 mA
(9) IB = 1.32 mA
(10) IB = 0.99 mA
(11) IB = 0.66 mA
(12) IB = 0.33 mA
Fig. 5.
Product data sheet
0.4
0.8
1.2
1.6
2
VCE (V)
Tamb = 25 °C
(1) IB = 150 mA
(2) IB= 135 mA
(3) IB = 120 mA
(4) IB = 105 mA
(5) IB = 90 mA
(6) IB = 75 mA
(7) IB = 60 mA
(8) IB = 45 mA
(9) IB = 30 mA
(10) IB = 15 mA
Fig. 6.
Collector current as a function of collectoremitter voltage; typical values
PBSS4350D
0
Collector current as a function of collectoremitter voltage; typical values.
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
mgw182
103
RCEsat
(Ω)
102
10
1
(1)
(2)
(3)
10- 1
10- 2
10- 1
1
102
10
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 7.
Collector-emitter equivalent on-resistance as a function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.95
1.9
0.40
0.25
Dimensions in mm
Fig. 8.
0.26
0.10
18-03-11
Package outline TSOP6 (SOT457)
PBSS4350D
Product data sheet
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
13. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
Fig. 9.
sot457_fr
Reflow soldering footprint for TSOP6 (SOT457)
5.3
1.5
(4×)
1.475
0.45
(2×)
5.05
1.475
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 10. Wave soldering footprint for TSOP6 (SOT457)
PBSS4350D
Product data sheet
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9 November 2023
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Nexperia B.V. 2023. All rights reserved
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4350D v.3
20231109
Product data sheet
-
PBSS4350D v.2
Modifications:
•
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
PBSS4350D v.2
20010613
Product data sheet
-
PBSS4350D v.1
PBSS4350D v.1
20010126
Product data sheet
-
-
PBSS4350D
Product data sheet
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
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15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PBSS4350D
Product data sheet
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PBSS4350D
Nexperia
50 V low VCEsat NPN transistor
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................ 3
11. Test information.......................................................... 5
12. Package outline.......................................................... 5
13. Soldering..................................................................... 6
14. Revision history..........................................................7
15. Legal information........................................................8
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Nexperia B.V. 2023. All rights reserved
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Date of release: 9 November 2023
PBSS4350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 November 2023
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Nexperia B.V. 2023. All rights reserved
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