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PBSS4350D,125

PBSS4350D,125

  • 厂商:

    NXP(恩智浦)

  • 封装:

    SOT-457

  • 描述:

    TRANS NPN 50V 3A 6TSOP

  • 数据手册
  • 价格&库存
PBSS4350D,125 数据手册
PBSS4350D 50 V low VCEsat NPN transistor 9 November 2023 Product data sheet 1. General description NPN low VCEsat transistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D 2. Features and benefits • • • • • Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. AEC-Q101 qualified 3. Applications • • • • • Supply line switching circuits Battery management applications DC/DC convertor applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V ICM peak collector current single pulse; tp ≤ 1 ms - - 5 A RCEsat collector-emitter saturation resistance IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 110 145 mΩ 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 C collector 2 C collector 3 B base 4 E emitter 5 C collector 6 C collector Simplified outline 6 5 Graphic symbol C 4 B 1 2 3 TSOP6 (SOT457) E sym014 PBSS4350D Nexperia 50 V low VCEsat NPN transistor 6. Ordering information Table 3. Ordering information Type number Package PBSS4350D Name Description Version TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PBSS4350D 43 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 6 V IC collector current - 3 A ICM peak collector current - 5 A IBM peak base current - 1 mA Ptot total power dissipation [1] - 600 mW [2] - 750 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] single pulse; tp ≤ 1 ms Tamb ≤ 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) [1] [2] Conditions thermal resistance from in free air junction to ambient Min Typ Max Unit [1] - - 208 K/W [2] - - 160 K/W 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . PBSS4350D Product data sheet All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 2/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 50 V; IE = 0 A; Tj = 150 °C - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 500 mA; Tamb = 25 °C 200 - - VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 200 - - VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 100 - - IC = 500 mA; IB = 50 mA; Tamb = 25 °C - - 90 mV IC = 1 A; IB = 50 mA; Tamb = 25 °C - - 170 mV IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - 290 mV - 110 145 mΩ - - 1.2 V VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - 1.1 V fT transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C 100 - - MHz Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 30 pF mgw175 600 hFE 500 (1) mgw176 1.2 VBE (V) 1.0 (1) 400 0.8 (2) 300 (2) 0.6 (3) 200 0.4 (3) 100 0 10- 1 0.2 1 10 102 0 10- 1 103 104 IC (mA) VCE = 2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 1. Product data sheet 10 102 103 104 IC (mA) VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 C (3) Tamb = 150 °C DC current gain; typical values PBSS4350D 1 Fig. 2. Base-emitter voltage as a function of collectorcurrent; typical values All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 3/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor mgw181 103 mgw178 1.2 VBEsat (V) 1.0 VCEsat (mV) 102 (1) 0.8 (2) (1) 0.6 (2) (3) (3) 0.4 10 0.2 1 10- 1 1 10 102 0 10- 1 103 104 IC (mA) 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. 1 Collector-emitter saturation as a function of collector current; typical values. Fig. 4. mgw179 1200 IC (mA) mgw180 5 (1) IC (A) (1) 1000 Base-emitter saturation voltage as a function of collector current; typical values (2) 4 (3) (8) (4) 800 (2) (3) (4) (5) (6) (7) (5) 3 (9) (6) 600 (7) (10) 2 (8) 400 (9) (10) 200 1 (11) (12) 0 0 0.4 0.8 1.2 0 1.6 2 VCE (V) Tamb = 25 °C (1) IB = 3.96 mA (2) IB = 3.63 mA (3) IB = 3.30 mA (4) IB = 2.97 mA (5) IB = 2.64 mA (6) IB = 2.31 mA (7) IB = 1.98 mA (8) IB = 1.65 mA (9) IB = 1.32 mA (10) IB = 0.99 mA (11) IB = 0.66 mA (12) IB = 0.33 mA Fig. 5. Product data sheet 0.4 0.8 1.2 1.6 2 VCE (V) Tamb = 25 °C (1) IB = 150 mA (2) IB= 135 mA (3) IB = 120 mA (4) IB = 105 mA (5) IB = 90 mA (6) IB = 75 mA (7) IB = 60 mA (8) IB = 45 mA (9) IB = 30 mA (10) IB = 15 mA Fig. 6. Collector current as a function of collectoremitter voltage; typical values PBSS4350D 0 Collector current as a function of collectoremitter voltage; typical values. All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 4/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor mgw182 103 RCEsat (Ω) 102 10 1 (1) (2) (3) 10- 1 10- 2 10- 1 1 102 10 103 104 IC (mA) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 7. Collector-emitter equivalent on-resistance as a function of collector current; typical values 11. Test information Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.95 1.9 0.40 0.25 Dimensions in mm Fig. 8. 0.26 0.10 18-03-11 Package outline TSOP6 (SOT457) PBSS4350D Product data sheet All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 5/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 Fig. 9. sot457_fr Reflow soldering footprint for TSOP6 (SOT457) 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 10. Wave soldering footprint for TSOP6 (SOT457) PBSS4350D Product data sheet All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 6/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS4350D v.3 20231109 Product data sheet - PBSS4350D v.2 Modifications: • • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. PBSS4350D v.2 20010613 Product data sheet - PBSS4350D v.1 PBSS4350D v.1 20010126 Product data sheet - - PBSS4350D Product data sheet All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 7/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or PBSS4350D Product data sheet All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 8/9 PBSS4350D Nexperia 50 V low VCEsat NPN transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................1 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 2 10. Characteristics............................................................ 3 11. Test information.......................................................... 5 12. Package outline.......................................................... 5 13. Soldering..................................................................... 6 14. Revision history..........................................................7 15. Legal information........................................................8 © Nexperia B.V. 2023. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 9 November 2023 PBSS4350D Product data sheet All information provided in this document is subject to legal disclaimers. 9 November 2023 © Nexperia B.V. 2023. All rights reserved 9/9
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