DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D302
PBSS4350D 50 V low VCEsat NPN transistor
Product data sheet Supersedes data of 2001 Jan 26 2001 Jul 13
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC convertor applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION
handbook, halfpage
PBSS4350D
QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 50 5
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