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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2N5401
Amplifier Transistor
Features
• Collector-Emitter Voltage: VCEO = 150V
• Collector Dissipation: PC (max) = 625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
Top Mark
Package
Packing Method
Pack Quantity
2N5401YBU
2N5401
TO-92 3L
Bulk
10000
2N5401YTA
2N5401
TO-92 3L
Ammo
2000
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
-600
mA
-55 to 150
C
IC
TJ, TSTG
Collector Current
Operating and Storage Junction Temperature Range
© 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1
www.fairchildsemi.com
1
2N5401 — Amplifier Transistor
May 2016
Values are at TA = 25C unless otherwise noted.
Symbol
PD
RJA
Parameter
Max.
Total Device Dissipation
625
mW
5
mW/C
200
C/W
Derate above 25C
Thermal Resistance, Junction to Ambient
Unit
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
Parameter
Conditions
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
(2)
Min.
Typ. Max. Unit
IC = -100 A, IE = 0
-160
V
IC = -1 mA, IB = 0
-150
V
-5
Emitter-Base Breakdown Voltage
IE = -10 A, IC = 0
ICBO
Collector Cut-Off Current
VCB = -120 V, IE = 0
-50
A
IEBO
Emitter Cut-Off Current
VEB = -3 V, IC = 0
-50
A
IC = -1 mA, VCE = -5 V
hFE1
DC Current Gain(2)
IC = -10 mA,
VCE = -5 V
Collector-Emitter Saturation Voltage(2)
VBE(sat)
Base-Emitter Saturation Voltage(2)
fT
Cob
NF
Current Gain Bandwidth Product
30
Standard Class
60
240
Y Class
120
240
IC = -50 mA, VCE = -5 V
VCE(sat)
V
50
IC = -10 mA, IB = -1 mA
-0.2
V
IC = -50 mA, IB = -5 mA
-0.5
V
IC = -10 mA, IB = -1 mA
-1.0
V
IC = -50 mA, IB = -5 mA
-1.0
V
400
MHz
IC = -10 mA,
VCE = -10 V, f = 100 MHz
100
Output Capacitance
VCB = -10 V, IE = 0, f = 1 MHz
6
pF
Noise Figure
IC = -250 A, VCE = -5 V,RS = 1 k,
f = 10 Hz to 15.7 kHz
8
dB
Note:
2. Pulse Test: Pulse Width300s, Duty Cycle2%.
© 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1
www.fairchildsemi.com
2
2N5401 — Amplifier Transistor
Thermal Characteristics(1)
2N5401 — Amplifier Transistor
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = -5V
100
10
-1
-10
-100
-1000
-10
IC = 10 IB
VBE(sat)
-1
VCE(sat)
-0.1
-0.01
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
-1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
IC [mA], COLLECTOR CURRENT
VCE = -5V
-100
-10
-1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
10
1
0.1
-1.2
-1
VBE[V], BASE-EMITTER VOLTAGE
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
-1000
Figure 4. Output Capacitance
1000
VCE = -10V
100
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
© 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1
www.fairchildsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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