2N5401U

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE z Switching and amplification in high voltage Applications such as telephony z Low current(max. 500mA) z High voltage(max.160v) MARKING: 5401 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.5 W 250 ℃/W TJ Thermal Resistance From Junction To Ambient Junction Temperature Tstg Storage Temperature RθJA 150 ℃ -55~150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE = -10μA, IC=0 -5 V Collector cut-off current ICBO VCB = -120 V, IE=0 -50 nA Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA hFE(1) VCE= -5V, IC=-1 mA 50 hFE(2) VCE= -5V, IC= -10 mA 60 hFE(3) VCE= -5V, IC=-50 mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat) IC= -10 mA, IB= -1 mA -0.2 V VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V VBE(sat) IC= -10 mA, IB= -1 mA -1 V VBE(sat) IC= -50 mA, IB= -5 mA VCE= -10V, IC= -10mA, f = 100MHz VCB=-10V, IE= 0,f=1MHz VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to15.7kHz -1 V 300 MHz 6 pF 8 dB Transition frequency fT Output Capacitance Cob Noise Figure NF 100 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics - 30 500 COMMON EMITTER Ta=25℃ -200uA DC CURRENT GAIN IC -180uA - 25 COLLECTOR CURRENT -160uA -140uA - 20 -120uA -100uA - 15 -80uA - 10 VCE= -5V o Ta=100 C hFE (mA) hFE —— IC Static Characteristic - 35 o Ta=25 C 100 -60uA -40uA 10 - 5 IB=-20uA 0 0 - 2 - 4 - 10 - 8 -6 - 12 COLLECTOR-EMITTER VOLTAGE VBEsat —— - 1.0 - 14 VCE VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) Ta=25℃ - 0.7 - 0.6 Ta=100℃ - 0.5 - 0.4 - 0.3 -0.1 -1 -10 COLLECTOR CURRENT Cob / Cib —— IC Ta=100℃ Ta=25℃ -0.1 -1 -10 COLLECTOR CURRENT VCB / VEB fT 300 (MHz) f=1MHz IE=0 / IC=0 o Ta=25 C —— -100 IC (mA) IC 250 TRANSITION FREQUENCY C fT (pF) IC -0.1 -0.01 -100 50 CAPACITANCE (mA) β=10 (mA) Cib IC -1 β=10 - 0.8 - 500 - 100 - 10 -1 COLLECTOR CURRENT - 0.9 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 4 - 0.3 - 18 - 16 (V) 10 Cob 200 150 100 50 VCE=-10V o -10 REVERSE VOLTAGE Pc 0.6 COLLECTOR POWER DISSIPATION Pc (W) Ta=25 C 0 1 - 0.5 —— V -0 -5 -10 -15 COLLECTOR CURRENT (V) -20 - IC -25 (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 125 100 Ta 150 (℃ ) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. -30 SOT-89 PACKAGE OUTLINE 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.