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BSV52
BSV52
C
E
SOT-23
B
Mark: B2
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
12
V
Collector-Base Voltage
20
V
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
VCEO
Collector-Emitter Voltage
VCES
VEBO
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
Max
Units
*BSV52
225
1.8
556
mW
mW/°C
°C/W
(continued)
Electrical Characteristics
Symbol
BSV52
NPN Switching Transistor
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
12
V
V(BR)CES
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 10 V, IE = 0
VCB = 10 V, IE = 0, TA = 125°C
100
5.0
nA
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 0.3 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
25
40
25
0.7
120
0.3
0.25
0.4
0.85
1.2
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Transition Frequency
Ccb
Collector-Base Capacitance
IC = 10 mA, VCE = 10 V,
f = 100 MHz
IE = 0, VCB = 5.0 V, f = 1.0 MHz
Ceb
Emitter-Base Capacitance
IC = 0, VEB = 1.0 V, f = 1.0 MHz
400
MHz
4.0
pF
4.5
pF
SWITCHING CHARACTERISTICS
ts
Storage Time
IB1 = IB2 = IC = 10 mA
13
ns
ton
Turn-On Time
12
ns
toff
Turn-Off Time
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA, IB2 = 1.5 mA
18
ns
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
3
(continued)
VC E = 1.0V
150
125 ° C
100
25 ° C
50
- 40 °C
h
FE
- DC CURRENT GAIN
200
0.01
100
Base-Emitter Saturation
Voltage vs Collector Current
1.4
β = 10
1.2
1
0.8
0.6
0.4
- 40 °C
25 °C
125 °C
0.1
IC
1
10
100
- COLLE CTOR CURRENT ( mA)
300
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.4
0.3
25 °C
0.2
0.1
125 °C
- 40 °C
0
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
1
- 40°C
0.8
25 °C
125 °C
0.6
0.4
0.2
0.1
V CE= 1.0V
1
10
I C - COLLECTOR CURRENT (mA)
600
V CB = 20V
100
10
1
25
500
Base-Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA)
V BESAT- BASE -EMITTER VOLTAG E (V)
IC
0.1
1
10
- COLLECTOR CURRENT (mA)
V BE(O N) - BASE-E MITTER ON VOLTAGE (V)
DC Current Gain
vs Collector Current
V CESAT - COLLE CTOR-EMITTER VOLTAGE (V)
Typical Characteristics
50
75
100
125
T A - AMBIENT TE MPERATURE (°C)
150
100
BSV52
NPN Switching Transistor
(continued)
Typical Characteristics
(continued)
Output Capacitance vs
Reverse Bias Voltage
Switching Times vs
Collector Current
5
100
SWITCHING TIMES (ns)
4
C ibo
3
C obo
2
1
12
S WITCHING TIMES ( ns)
tsf
10
tss
8
6
tsd
4
tsr
I C= 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA, VCC = 3.0 V
0
25
T
A
50
75
- AMBIENT TE MPERATURE (°C)
100
Storage Time vs Turn On
and Turn Off Base Currents
-12
I C = 10 mA
VCC = 3.0 V
-10
-8
t s= 3.0 ns
-6
4.0 ns
-4
-2
0
20
tsr
10
t sf
5
2
6.0 ns
0
2
4
6
8
I B1 - TURN ON BASE CURRENT (mA)
10
tss
ts d
2
50
I B2 - TURN OFF BASE CURRENT (mA)
0.5
1
5
10
REVERSE BIAS VOLTAGE (V)
Switching Times vs
Ambient Temperature
2
VCC = 3.0 V
I C = 10 I B1 = I B2 = 10
50
1
0
0.1
I B2 - TURN OFF BASE CURRENT (mA)
CAPACITANCE (pF)
F = 1.0MHz
I B2 - TURN OFF BASE CURRENT (mA)
BSV52
NPN Switching Transistor
5
10
20
50
100
I C - COLLECTOR CURRENT (mA)
300
Storage Time vs Turn On
and Turn Off Base Currents
-12
I C = 10 mA
VCC = 3.0 V
-10
3
-8
t s= 3.0 ns
-6
4.0 ns
-4
-2
0
6.0 ns
0
2
4
6
8
I B1 - TURN ON BASE CURRENT (mA)
10
Storage Time vs Turn On
and Turn Off Base Currents
-30
I = 100 mA
C
-25
VCC = 3.0 V
-20
t S= 3.0 ns
4.0 ns
8.0 ns
6.0 ns
-15
-10
16.0 ns
-5
0
0
5
10
15
20
25
I B1 - TURN ON BASE CURRENT (mA)
30
(continued)
-6
I C = 10 mA
VCC = 3.0 V
-5
8.0 ns
-4
t f = 7.0 ns
-3
-2
10 ns
-1
0
0
2
I B2 - TURN OFF BASE CURRENT (mA)
10
Fall Time vs Turn On
and Turn Off Base Currents
-30
I C = 100 mA
3.0 ns
VCC = 3.0 V
-25
-20
4.0 ns
t f = 2.0 ns
8.0 ns
-15
12.0 ns
-10
-5
0
0
5
10
15
20
25
I B1 - TURN ON BASE CURRENT (mA)
30
Fall Time vs Turn On
and Turn Off Base Currents
-12
I C = 30 mA
VCC = 3.0 V
-10
-8
ft
50
= 2.0 ns
5.0 ns
-4
-2
0
0
2
4
6
8
10
I B1 - TURN ON BASE CURRENT (mA)
5.0 ns
1
0
1
12
Delay Time vs Base-Emitter OFF
Voltage and Turn On Base Current
-6
I C = 10 mA
V CC = 3.0 V
-5
t d = 8.0 ns
-4
5.0 ns
-3
4.0 ns
-2
3.0 ns
-1
0
1
2
5
10
20
I B1 - TURN ON BASE CURRENT (mA)
50
350
t r= 2.0 ns
10 ns
4.0 ns
Power Dissipation vs
Ambient Temperature
VCC = 3.0 V
10
3.0 ns
-6
Rise Time vs. Turn On Base
Current and Collector Current
P D - POWER DISSIPATION (mW)
- TURN ON BASE CURRENT (mA)
B1
4
6
8
- TURN ON BASE CURRENT (mA)
I B2 - TURN OFF BASE CURRENT (mA)
I B2 - TURN OFF BASE CURRENT (mA)
Fall Time vs Turn On
and Turn Off Base Currents
I B1
I
(continued)
V BE(O)- BASE-EMITTER OFF VOLTAGE (V)
Typical Characteristics
20 ns
10
100
I C - COLLECTOR CURRENT (mA)
500
300
250
SOT-23
200
150
100
50
0
0
25
50
75
100
TEMPERATURE ( oC)
125
150
BSV52
NPN Switching Transistor
(continued)
BSV52
NPN Switching Transistor
Test Circuits
890 Ω
'A'
VIN
0
0.1 µF
+6V
Ω
1 KΩ
500 Ω
56 Ω
- 4V
VOUT
91 Ω
- 10
10%
0.0023µ
µF
+
10 µF
10 µF
VOUT
ts
0.0023µ
µF
11 V
10% Pulse waveform
at point ' A'
0
500 Ω
VIN
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
0.1 µF
+
10 V
FIGURE 1: Charge Storage Time Measurement Circuit
VOUT
220 Ω
VIN
VIN
0
10%
VIN
Ω
3.3 KΩ
10%
0
VOUT
90%
t on
ton
VBB = - 3.0 V
VIN = + 15.25 V
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
50 Ω
50 Ω
Ω
3.3 KΩ
90%
VOUT
toff
0.0023µ
µF
0.05 µ F
0.05 µ F
0.0023µ
µF
t off
VBB = 12 V
VIN = - 20.9 V
To sampling oscilloscope input
impedance = 50Ω
Rise Time ≤ 1 ns
VBB
0.1 µ F
0.1 µ F
VCC = 3.0 V
FIGURE 2: tON, tOFF Measurement Circuit
3
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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