EFC2K107NUZTCG

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. EFC2K107NUZ MOSFET – Power, Dual, N-Channel, for 1-Cell Lithium-ion Battery Protection www.onsemi.com 12 V, 2.85 mW, 20 A This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1−cell lithium-ion battery applications. VSSS RSS(ON) MAX IS MAX 12 V 2.85 mW @ 4.5 V 20 A 3.1 mW @ 3.8 V Features • • • • 4.7 mW @ 3.1 V 2.5 V Drive Common-Drain Type ESD Diode−Protected Gate This device is Pb−Free, Halogen Free and RoHS Compliance 6.8 mW @ 2.5 V ELECTRICAL CONNECTION 6, 7, 9, 10 Applications • 1−Cell Lithium-ion Battery Charging and Discharging Switch Specifications 1: Source1 2: Source1 3: Gate1 4: Source1 5: Source1 6: Source2 7: Source2 8: Gate2 9: Source2 10: Source2 8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Source to Source Voltage VSSS 12 V Gate to Source Voltage VGSS ±8 V IS 20 A Parameter Source Current (DC) Source Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% ISP 80 A Total Dissipation (Note 1) PT 1.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 1, 2, 4, 5 N-Channel PIN ASSIGNMENT 2 5 WLCSP10 (1.84 x 1.96 x 0.13) CASE 567VW Parameter 3 7 10 4 6 8 9 MARKING DIAGRAM THERMAL RESISTANCE RATINGS Junction to Ambient (Note 1) 1 Symbol Value Unit RθJA 69.4 °C/W NY AYWZZ 1. Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm). NY A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 July, 2019 − Rev. 0 1 Publication Order Number: EFC2K107NUZ/D EFC2K107NUZ ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol V(BR)SSS Conditions Min Source to Source Breakdown Voltage IS = 1 mA, VGS = 0 V Typ Max 12 Unit V ISSS Zero-Gate Voltage Source Current VSS = 10 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±8 V, VSS = 0 V ±1 mA VGS(th) Gate Threshold Voltage VSS = 6 V, IS = 1 mA 0.4 1.3 V RSS(on) Static Source to Source On-State Resistance IS = 5 A, VGS = 4.5 V 1.5 2.2 2.85 mW IS = 5 A, VGS = 3.8 V 1.65 2.4 3.1 mW IS = 5 A, VGS = 3.1 V 1.9 2.8 4.7 mW IS = 5 A, VGS = 2.5 V 2.0 3.3 6.8 mW td(on) tr VSS = 5 V, VGS = 3.8 V, IS = 5 A Rg = 10 kW Switching Test Circuit Turn-ON Delay Time Rise Time td(off) tf Qg VF(S−S) 11 ms 36 ms Turn-OFF Delay Time 95 ms Fall Time 70 ms 30 nC Total Gate Charge VSS = 5 V, VGS = 3.8 V, IS = 5 A Forward Source to Source Voltage IS = 3 A, VGS = 0 V 0.75 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. td(on), tr, td(off), tf S2 RL G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. Rg V G1 VSS S1 Figure 1. Switching Test Circuit ORDERING INFORMATION Device Marking Package Shipping† (Qty / Packing) EFC2K107NUZTCG NY WLCSOP10, 1.84 x 1.96 x 0.13 (Pb-Free / Halogen Free) 5,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 EFC2K107NUZ TYPICAL CHARACTERISTICS 10 4.5 V TA = 25°C Single Pulse 5 VGS = 2.5 V 4 3 3.1 V 2 VSS = 6 V 9 Source Current, IS (A) Source Current, IS (A) 6 3.8 V 1 8 7 TA = 75°C 6 5 25°C 4 3 −25°C 2 1 0 0 0.005 0.001 0.015 0 0.02 0.0 Source-to-Source Voltage, VSS (V) Static Source-to-Source On-State Resistance, RSS(on) (mW) Static Source-to-Source On-State Resistance, RSS(on) (mW) IS = 5 A Single Pulse 4.0 25°C 3.0 TA = 75°C 2.5 2.0 −25°C 1.5 1.0 1 2 3 4 5 6 7 0.9 1.2 1.5 1.8 Figure 3. Transfer Characteristics 5.0 3.5 0.6 Gate-to-Source Voltage, VGS (V) Figure 2. On-Region Characteristics 4.5 0.3 8 5.0 VGS = 2.5 V, IS = 5 A Single Pulse 4.5 4.0 VGS = 3.1 V, IS = 5 A 3.5 3.0 2.5 VGS = 4.5 V, IS = 5 A 2.0 VGS = 3.8 V, IS = 5 A 1.5 1.0 −60 −40 −20 Gate-to-Source Voltage, VGS (V) 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA (5C) Figure 4. On-Resistance vs. Gate-to-Source Voltage Figure 5. On-Resistance vs. Temperature VGS = 0 V Single Pulse Switching Time, S/W (ms) Source Current, IS (A) 10 1 TA = 75°C 25°C 0.1 −25°C 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 td(off) tf tr 1 1.0 VSS = 5 V, VGS = 3.8 V IS = 5 A 100 1 td(on) 10 Gate Resistance, Rg (kW) Forward Source-to-Source Voltage, VF(S-S) (V) Figure 6. Forward Source-to-Source Voltage vs. Current Figure 7. Switching Time vs. Gate Resistance www.onsemi.com 3 EFC2K107NUZ 4.5 VSS = 5 V IS = 5 A 4.0 3.5 100 Source Current, IS (A) Gate-to-Source Voltage, VGS (V) TYPICAL CHARACTERISTICS 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 25 30 35 100 ms 10 1 ms DC Operation 1 0.1 10 ms Operation in this area is limited by RSS(on) 100 ms TA = 25°C Single Pulse When mounted on ceramic substrate (5000 mm2 × 0.8 mm) 0.01 0.01 40 10 ms IS = 20 A 0.5 0.0 ISP = 80 A (PW ≤ 10 ms) Total Gate Charge, Qg (nC) 0.1 1 10 Source-to-Source Voltage, VSS (V) Figure 8. Gate-to-Source Voltage vs. Total Charge Figure 9. Safe Operating Area 2.0 Total Dissipation, PT (W) 1.8 Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA (5C) Figure 10. Total Dissipation vs. Temperature Thermal Resistance, RqJA (5C/W) 100 Duty Cycle − 50% 20% 10 10% 5% 2% 1 1% Single Pulse Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Time, PT (s) Figure 11. Thermal Response Note on Usage: Since the EFC2K107NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP10 1.84x1.96x0.13 CASE 567VW ISSUE O DATE 28 FEB 2018 GENERIC MARKING DIAGRAM* XXXXXX AYWZZ DOCUMENT NUMBER: DESCRIPTION: A Y W ZZ = Assembly Location = Year = Work Week = Assembly Lot 98AON83924G WLCSP10 1.84x1.96x0.13 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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