FCPF16N60

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP16N60 / FCPF16N60 N-Channel SuperFET® MOSFET 600 V, 16 A, 260 mΩ Features Description • 650V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 55 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 110 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply D GD S TO-220 G G D S TO-220F S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage FCP16N60 FCPF16N60 600 (Note 1) Unit V 16 10.1 16* 10.1* A A 48 48* A ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C (TC = 25°C) - Derate Above 25°C 167 1.33 37.9 0.3 W W/°C *Drain current limited by maximum junction temperature. Thermal Characteristics FCP16N60 FCPF16N60 Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter 0.75 3.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 1 www.fairchildsemi.com FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET August 2014 Part Number FCP16N60 Top Mark FCP16N60 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF16N60 FCPF16N60 TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC 600 - - V ID = 250 μA, VGS = 0 V, TJ = 150oC - 650 - V ID = 250 μA, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 16 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 8 A - 0.55 0.26 Ω gFS Forward Transconductance VDS = 40 V, ID = 8 A - 11.5 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 1730 2250 pF - 960 1150 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 85 - Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 45 60 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 110 - pF Qg Total Gate Charge at 10V 55 70 nC Gate to Source Gate Charge VDS = 480 V, ID = 16 A, VGS = 10 V - Qgs - 10.5 13 nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) - 28 - nC f = 1 MHz - 1.7 - Ω - 42 85 ns VDD = 300 V, ID = 16 A, VGS = 10 V, RG = 25 Ω - 130 270 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) - 165 340 ns - 90 190 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 16 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 16 A - - 1.4 V trr Reverse Recovery Time - 435 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 16 A, dIF/dt = 100 A/μs - 7.0 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: IAS = 8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 2 www.fairchildsemi.com FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 1 10 150°C 25°C -55°C 0 10 ♦Note ♦ Notes : 1. 250μS Pulse Test 2. TC = 25°C -1 0 10 1. VDS = 40V 2. 250μs Pulse Test 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 0.1 1 10 150°C 0 10 25°C ♦ Notes : 1. VGS = 0V 2. 250 μs Pulse Test ♦ Note : TJ = 25 °Cٛ 0.0 0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Crss = Cgd 5000 Coss 4000 ♦ Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 2000 1000 0 -1 10 Crss 0 10 1.4 1.6 10 VDS = 100V 10 VDS = 250V VDS = 480V 8 6 4 2 ♦ Note : ID = 16A 0 1 0 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 6000 1.0 Figure 6. Gate Charge Characteristics 7000 3000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 10 10 IDR , Reverse Drain Current [A] RDS(ON) [O ], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.6 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 ♦ Notes : 0.9 1. VGS = 0 V 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 ♦ Notes : 1. VGS = 10 V 0.5 2. ID = 8 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 o TJ, Junction Temperature [ C] ID, Drain Current [A] ID, Drain Current [A] 10 us DC 0 10 ? Notes : o 1. TC = 25 C -1 10 100 us 1 ms 1 10 10 ms 100 ms 0 10 DC ? Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 -2 10 200 Operation in This Area is Limited by R DS(on) 2 1 ms 1 150 10 10 us 100 us 10 100 Figure 9-2. Maximum Safe Operating Area for FCPF16N60 Operation in This Area is Limited by R DS(on) 2 50 o Figure 9-1. Maximum Safe Operating Area for FCP16N60 10 0 TJ, Junction Temperature [ C] 0 10 1 2 10 10 3 10 0 1 10 10 2 10 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature [°C] ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 4 www.fairchildsemi.com FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics (Continued) FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics (Continued) ZθJC Thermal Response [oC/W] Z (t),(t), Thermal Response Figure 11-1. Transient Thermal Response Curve for FCP16N60 10 0 D = 0 .5 ? 0 .2 10 -1 N o te s : 1 . Z ? J C (t) = 0 .7 5 ? /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 0 .1 3 . T JM - T C = P DM * Z ? JC (t) 0 .0 5 0 .0 2 PDM ? JC 0 .0 1 10 t1 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 ,t1S, qRectangular u a re W a v ePulse P u ls Duration e D u ra tio[sec] n [s e c ] 10 1 10 0 D = 0 .5 0 .2 ? 0 .1 10 -1 3 . T J M - T C = P D M * Z ? J C (t) 0 .0 2 0 .0 1 10 PDM t1 s in g le p u ls e -2 10 N o te s : 1 . Z ? J C (t) = 3 .3 ? /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 ?JC o ZθJC Z (t), (t),Thermal ThermalResponse Response[ C/W] Figure 11-2. Transient Thermal Response Curve for FCPF16N60 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1t,1,SRectangular q u a re W a vPulse e P u lsDuration e D u ra tio n [s e c ] [sec] ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 5 www.fairchildsemi.com FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 6 www.fairchildsemi.com FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. C0 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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