FCPF600N60Z

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP600N60Z / FCPF600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 510 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Applications • LCD / LED / PDP TV and Monitor Lightning • Solar Inverter • AC-DC Power Supply D GD S G G D S TO-220 TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCP600N60Z FCPF600N60Z 600 Unit V ±20 V - DC - AC (f > 1 Hz) - Continuous (TC = 25oC) ±30 V 7.4 7.4* 4.7 4.7* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 1.5 A EAR Repetitive Avalanche Energy (Note 1) 0.89 mJ dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 22.2* A 135 MOSFET dv/dt mJ 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL 22.2 A - Derate Above 25oC V/ns 20 89 28 W 0.71 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP600N60Z FCPF600N60Z RθJC Thermal Resistance, Junction to Case, Max. 1.4 4.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 1 Unit oC/W www.fairchildsemi.com FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET December 2014 Part Number FCP600N60Z Top Mark FCP600N60Z Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF600N60Z FCPF600N60Z TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain to Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ID = 10 mA, Referenced to 25oC - 0.67 - V/oC VGS = 0 V, ID = 7.4 A - 700 - V VDS = 600 V, VGS = 0 V V - - 1 VDS = 480 V, TC = 125oC - 1.32 - VGS = ±20 V, VDS = 0 V - - ±10 2.5 - 3.5 V - 0.51 0.6 Ω - 6.7 - S - 840 1120 pF - 630 840 pF pF μA uA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 3.7 A VDS = 20 V, ID = 3.7 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 30 45 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 16.5 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 74 - pF Qg(tot) Total Gate Charge at 10V 20 26 nC Gate to Source Gate Charge VDS = 380 V, ID = 3.7 A, VGS = 10 V - Qgs - 3.4 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25 V, VGS = 0 V, f = 1 MHz (Note 4) - 7.5 - nC f = 1 MHz - 2.89 - Ω - 13 36 ns VDD = 380 V, ID = 3.7 A, VGS = 10 V, RG = 4.7 Ω - 7 24 ns - 39 88 ns - 9 28 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 7.4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22.2 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.7 A - - 1.2 V trr Reverse Recovery Time - 200 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.7 A, dIF/dt = 100 A/μs - 2.3 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 3.7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 2 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 20 VGS = 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain Current[A] ID, Drain Current[A] 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 10 o 25 C o o 150 C 1 -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.4 0.2 1 10 VDS , Drain to Source Voltage [V] VDS , Drain-Source Voltage[V] 0.2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 8 IS, Reverse Drain Current [A] VGS = 10V 0.6 VGS = 20V 10 o 150 C *Note: TC = 25 C 0 5 10 15 ID, Drain Current [A] *Notes: 1. VGS = 0V 1 0.4 20 Figure 5. Capacitance Characteristics o 25 C o 2. 250μs Pulse Test 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10000 VGS, Gate to Source Voltage [V] 10 Ciss 1000 Capacitances [pF] 7 50 0.9 0.3 6 VV , Gate to Source Voltage [V] GS GS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 RDS(ON) [Ω], Drain to Source On-Resistance 2 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.5 0.1 1 10 100 VDS, Drain to Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 Coss VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 Crss 0 600 3 *Note: ID = 3.7A 0 5 10 15 20 Qg, Total Gate Charge [nC] 25 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 3.7A 0.5 Operation in This Area is Limited by R DS(on) *Notes: o 1. TC = 25 C 10 ID, Drain Current [A] 10μs 100μs 1ms 10ms 10μs 100μs 1ms 1 Operation in This Area is Limited by R DS(on) o o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1000 Figure 11. Maximum Drain Current vs. Case Temperature 1 10 100 VDS, Drain to Source Voltage [V] 1000 Figure 12. Eoss vs. Drain to Source Voltage 8 4 6 3 EOSS, [μJ] ID, Drain Current [A] DC 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain to Source Voltage [V] 10ms *Notes: 0.1 DC o 4 2 0 25 200 50 10 0.1 0.1 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area for FCPF600N60Z 50 ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area for FCP600N60Z 1 2.5 2 1 50 75 100 125 o TC, Case Temperature [ C] ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 0 150 4 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve for FCP600N60Z o ZθJC(t), Thermal Response [ C/W] 2 1 0.5 PDM t1 0.2 0.1 t2 *Notes: 0.05 o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 Single pulse 0.1 -5 10 -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] -1 0 10 10 Figure 14. Transient Thermal Response Curve for FCPF600N60Z 0.5 θJC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 5 1 0.2 PDM 0.1 0.05 0.02 0.01 Single pulse t1 t2 *Notes: o 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 -5 10 ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 -4 10 -3 -2 -1 0 10 10 10 10 Duration[sec] [sec] t1Rectangular , Rectangular Pulse Pulse Duration 5 1 10 100 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET IG = const. Figure 15. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 16. Resistive Switching Test Circuit & Waveforms VGS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 6 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z — N-Channel SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C4 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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