FCPF7N60

FCP7N60 / FCPF7N60 600V N-Channel MOSFET July 2005 SuperFET FCP7N60 / FCPF7N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra low gate charge (typ. Qg = 25nC) • Low effective output capacitance (typ. Coss.eff = 60pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G GDS TO-220 GD S TO-220F S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCP7N60 600 7 4.4 21 FCPF7N60 7* 4.4* 21* ± 30 230 7 8.3 4.5 Unit V A A A V mJ A mJ V/ns 83 0.67 -55 to +150 300 31 0.25 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCP7N60 1.5 62.5 FCPF7N60 4.0 62.5 Unit °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP7N60 / FCPF7N60 Rev. A1 FCP7N60 / FCPF7N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCP7N60 FCPF7N60 Device FCP7N60 FCPF7N60 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C ID = 250µA, Referenced to 25°C VGS = 0V, ID = 7A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 3.5A VDS = 40V, ID = 3.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5) Typ -650 0.6 700 -----0.53 6 710 380 34 22 60 35 55 75 32 23 4.2 11.5 ---360 4.5 Max Units ----1 10 100 -100 5.0 0.6 -920 500 -29 -80 120 160 75 30 5.5 -7 21 1.4 --V V V/°C V µA µA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC A A V ns µC On Characteristics Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 7A RG = 25Ω Switching Characteristics --------- VDS = 480V, ID = 7A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7A VGS = 0V, IS = 7A dIF/dt =100A/µs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCP7N60 / FCPF7N60 Rev. A1 2 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics ID, Drain Current [A] 10 1 ID , Drain Current [A] 10 1 150°C 25°C -55°C Note 1. VDS = 40V 2. 250µs Pulse Test -1 10 0 10 0 10 -1 Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 Note : TJ = 25°C IDR , Reverse Drain Current [A] Drain-Source On-Resistance 1.8 10 1 RDS(ON) [Ω], VGS = 10V 10 0 VGS = 20V 150°C 25°C Notes : 1. VGS = 0V 2. 250µs Pulse Test 15 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V Capacitance [pF] 2000 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 8 6 1000 Ciss Crss 4 2 Note : ID = 7A 0 -1 10 10 0 10 1 0 VDS, Drain-Source Voltage [V] 0 5 10 15 20 25 QG, Total Gate Charge [nC] FCP7N60 / FCPF7N60 Rev. A1 3 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.5 1.1 RDS(ON), (Normalized) 2.0 1.0 1.5 0.9 Notes : 1. VGS = 0 V 2. ID = 250µA 1.0 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area for FCP7N60 10 2 Figure 9-2. Maximum Safe Operating Area for FCPF7N60 10 2 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 10 ms DC ID, Drain Current [A] 10 1 100 us 10 1 100 us 1 ms 10 ms 100 ms DC Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 10 0 10 0 10 -1 Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 10 -1 10 -2 10 0 10 1 10 2 10 3 10 -2 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10.0 7.5 ID, Drain Current [A] 5.0 2.5 0.0 25 50 75 100 125 150 TC, Case Temperature [? ] FCP7N60 / FCPF7N60 Rev. A1 4 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FCP7N60 10 0 D = 0 .5 0 .2 0 .1 N o te s : 1 . Z θ JC ( t) = 1 .5 ° C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ JC ( t) ZθJC(t), Thermal Response 10 -1 0 .0 5 0 .0 2 0 .0 1 PDM 10 -2 s in g le p u ls e t1 t2 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FCPF7N60 D = 0 .5 ZθJC(t), Thermal Response 10 0 0 .2 0 .1 0 .0 5 N o te s : 1 . Z θ JC ( t) 4 .0 ° C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ JC ( t) 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 -2 t1 t2 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCP7N60 / FCPF7N60 Rev. A1 5 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time FCP7N60 / FCPF7N60 Rev. A1 6 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FCP7N60 / FCPF7N60 Rev. A1 7 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FCP7N60 / FCPF7N60 Rev. A1 8 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FCP7N60 / FCPF7N60 Rev. A1 9 15.87 ±0.20 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 10 FCP7N60 / FCPF7N60 Rev. A1 www.fairchildsemi.com