Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCP7N60 / FCPF7N60
N-Channel SuperFET® MOSFET
600 V, 7 A, 600 mΩ
Features
• 650 V @ TJ =
Description
150oC
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
• Typ. RDS(on) = 530 mΩ
• Ultra Low Gate Charge (Typ. Qg = 23 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• LCD/LED/PDP TV
• Solar Inverter
• AC-DC Power Supply
D
D
GD
S
TO-220
G
D
S
G
TO-220F
G
TO-220F
Y-formed
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
FCPF7N60 /
FCPF7N60YDTU
FCP7N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
600
(Note 1)
Unit
V
7
4.4
7*
4.4*
A
A
21
21*
A
± 30
V
230
mJ
IAR
Avalanche Current
(Note 1)
7
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
4.5
V/ns
83
0.67
31
0.25
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FCP7N60
FCPF7N60 /
FCPF7N60YDTU
RθJC
Thermal Resistance, Junction-to-Case, Max.
1.5
4.0
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
62.5
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
1
Unit
°C/W
www.fairchildsemi.com
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
November 2013
Part Number
FCP7N60
Top Mark
FCP7N60
FCPF7N60
FCPF7N60YDTU
Package
TO220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
FCPF7N60
TO220F
Tube
N/A
N/A
50 units
FCPF7N60
TO-220F
(Y-formed)
Tube
N/A
N/A
50 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 250 μA, TJ = 25°C
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA, TJ = 150°C
--
650
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
0.6
--
V/°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 7 A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.5 A
--
0.53
0.6
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 3.5 A
--
6
--
S
VDS = 25 V, VGS = 0 V,
f = 1 MHz
--
710
920
pF
--
380
500
pF
--
34
--
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1 MHz
--
22
29
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
--
60
--
pF
VDD = 300 V, ID = 7 A,
VGS = 10 V, RG = 25 Ω
--
35
80
ns
--
55
120
ns
--
75
160
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4)
VDS = 480 V, ID = 7 A,
VGS = 10 V
(Note 4)
--
32
75
ns
--
23
30
nC
--
4.2
5.5
nC
--
11.5
--
nC
7
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
21
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 7 A
--
--
1.4
V
trr
Reverse Recovery Time
360
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 7 A,
dIF/dt =100 A/μs
--
Qrr
--
4.5
--
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 3.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
2
www.fairchildsemi.com
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
0
10
Notes :
1. 250μs Pulse Test
2. TC = 25°C
-1
10
ID , Drain Current [A]
ID, Drain Current [A]
1
10
150°C
25°C
0
10
-55°C
Note
1. VDS = 40V
2. 250μs Pulse Test
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
1.8
1.6
1.4
VGS = 10V
1.2
1.0
0.8
0.6
VGS = 20V
0.4
0.2
0.0
1
10
0
10
150°C
25°C
Notes :
1. VGS = 0V
2. 250μs Pulse Test
Note : TJ = 25°C
-1
0
5
10
15
10
20
0.2
0.4
0.6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3000
0.8
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Coss
Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
Crss
10
10
VDS = 250V
10
VDS = 400V
8
6
4
2
Note : ID = 7A
0
1
0
5
10
15
20
25
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
1.6
VDS = 100V
2000
0
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)
Crss = Cgd
0
-1
10
1.2
Figure 6. Gate Charge Characteristics
Coss = Cds + Cgd
1000
1.0
VSD , Source-Drain Voltage [V]
3
www.fairchildsemi.com
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 3.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
for FCP7N60
2
2
10
Operation in This Area
is Limited by R DS(on)
100 us
1
10
1 ms
10 ms
DC
0
10
Notes :
1. TC = 25°C
-1
10
100
150
200
Operation in This Area
is Limited by R DS(on)
100 us
1
10
1 ms
10 ms
100 ms
0
10
DC
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
2. TJ = 150°C
3. Single Pulse
3. Single Pulse
-2
10
50
Figure 9-2. Maximum Safe Operating Area
for FCPF7N60
ID, Drain Current [A]
ID, Drain Current [A]
10
0
TJ, Junction Temperature [°C]
-2
0
1
10
2
10
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10.0
ID, Drain Current [A]
7.5
5.0
2.5
0.0
25
50
75
100
125
150
TC, Case Temperature [? ]
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
4
www.fairchildsemi.com
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
10
0
D = 0 .5
0 .2
N o te s :
1 . Z θ J C (t) = 1 .5 ° C /W M a x.
0 .1
10
-1
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 5
3 . T JM - T C = P D M * Z θ J C (t)
0 .0 2
0 .0 1
PDM
θJC
o
ZθJC
Z (t),
(t),Thermal
ThermalResponse
Response[ C/W]
Figure 11-1. Transient Thermal Response Curve for FCP7N60
10
-2
10
t1
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
D = 0 .5
10
0
0 .2
0 .1
N o te s :
1 . Z θ J C (t) 4 .0 ° C /W M a x.
0 .0 5
10
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
-1
0 .0 1
PDM
θJC
ZθJC
Response
[oC/W]
Z (t),(t),Thermal
Thermal
Response
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
t1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
5
www.fairchildsemi.com
50KΩ
200nF
12V
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
V
10V
GS
GS
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
6
www.fairchildsemi.com
FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
7
www.fairchildsemi.com
A
B
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
6.88
6.48
1 X 45°
B
16.00
15.60
1
R0.30
3
2.96
2.56
R0.30
1.47
1.24
10.45
9.45
B
2.14
16.07
15.67
B
10.00
9.00
0.90
0.70
0.50 M
2.54
A
B
2.54
B
4.00 MIN
B
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220Q03REV2
0.60
0.45
6.00
4.00
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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