FCPF600N65S3R0L

FCPF600N65S3R0L N‐Channel SUPERFET) III Easy‐Drive MOSFET 650 V, 6 A, 600 mW Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 600 mW @ 10 V 6A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 474 mW Ultra Low Gate Charge (Typ. Qg = 11 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S N-Channel MOSFET Applications • Computing / Display Power Supplies • Telecom / Server Power Supply • Industrial Power Supplies G D S TO−220F CASE 340BF MARKING DIAGRAM $Y&Z&3&K FCPF600 N65S3R0 $Y &Z &3 &K FCPF600N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2018 − Rev. 2 1 Publication Order Number: FCPF600N65S3R0L/D FCPF600N65S3R0L ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 6 (Note 4) A Continuous (TC = 100°C) 3.8 (Note 4) Pulsed (Note 1) IDM Drain Current 15 (Note 4) A EAS Single Pulsed Avalanche Energy (Note 2) 24 mJ IAS Avalanche Current (Note 2) 1.6 A EAR Repetitive Avalanche Energy (Note 1) 0.24 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 24 W 0.19 W/°C −55 to +150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 3 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. 4. Drain current limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FCPF600N65S3R0L RqJC Thermal Resistance, Junction to Case, Max. 5.29 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 Unit _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF600N65S3R0L FCPF600N65S3R0 TO−220F Tube N/A N/A 50 Units www.onsemi.com 2 FCPF600N65S3R0L ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.66 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 0.3 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.5 − 4.5 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.6 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3 A − 474 600 mW Forward Transconductance VDS = 20 V, ID = 3 A − 3.6 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 465 − pF − 10 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 127 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 17 − pF Total Gate Charge at 10V VDS = 400 V, ID = 3 A, VGS = 10 V (Note 5) − 11 − nC − 3 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 4.9 − nC f = 1 MHz − 0.9 − W VDD = 400 V, ID = 3 A, VGS = 10 V, Rg = 4.7 W (Note 5) − 11 − ns − 9 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 29 − ns Turn-Off Fall Time − 14 − ns Maximum Continuous Source to Drain Diode Forward Current − − 6 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 15 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 3 A − − 1.2 V trr Reverse Recovery Time − 198 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3 A, dIF/dt = 100 A/ms − 1.6 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCPF600N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS 30 *Notes: 1. VDS = 20V 2. 250m s Pulse Test 10 ID, Drain Current[A] 10 ID, Drain Current[A] 20 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 1 0.1 o 150 C o 25 C 1 o −55 C *Notes: 1. 250m s Pulse Test o 2. TC = 25 C 0.01 0.2 1 VDS, Drain−Source Voltage[V] 0.1 10 3 Figure 1. On−Region Characteristics VGS = 20V 0.4 3 6 9 ID, Drain Current [A] o 0.1 o −55 C 0.01 0.001 12 Capacitances [pF] VGS, Gate−Source Voltage [V] Ciss 1000 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = C gs + Cgd (C ds = shorted) Coss = C ds + Cgd Crss = Cgd 1 10 100 VDS, Drain−Source Voltage [V] Crss 0.0 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature *Note: ID = 3A 8 VDS = 130V VDS = 400V 6 4 2 0 1000 o 25 C 10 0.1 0.1 9 150 C 1 10000 1 8 2. 250m s Pulse Test 10 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10 7 *Notes: 1. VGS = 0V VGS = 10V 0 6 100 o *Note: TC = 25 C 0.8 0.0 5 VGS, Gate−Source Voltage[V] Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain−Source On−Resistance W [] 1.2 4 Figure 5. Capacitance Characteristics 0 3 6 9 Qg, Total Gate Charge [nC] 12 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCPF600N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 *Notes: 1. VGS = 0V 2. ID = 10mA 1.1 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 2.0 1.5 1.0 0.5 0.0 150 o TJ, Junction Temperature [ C] 2.5 100 o 150 30m s 100m s ID, Drain Current [A] ID, Drain Current [A] 50 8 10 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C 2. TJ = 150oC 3. Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 2.5 2.0 1.5 1.0 0.5 130 260 390 520 VDS, Drain to Source Voltage [V] 4 2 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 3.0 0 6 0 1000 Figure 9. Maximum Safe Operating Area EOSS [m J] 0 Figure 8. On−Resistance Variation vs. Temperature 30 0 −50 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature 0.01 *Notes: 1. VGS = 10V 2. ID = 3A 650 Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 FCPF600N65S3R0L r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 5.29 oC/W Peak T J = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 10 −2 −1 10 10 0 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 10 2 10 FCPF600N65S3R0L VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCPF600N65S3R0L + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dt/dt Test Circuit & Waveforms www.onsemi.com 8 FCPF600N65S3R0L PACKAGE DIMENSIONS TO−220 FULLPAK 3LD CASE 340BF ISSUE O 10.30 9.80 A 2.90 2.50 3.40 3.00 6.60 6.20 3.00 2.60 B 19.00 17.70 1 X 45° B 15.70 15.00 3.30 B 2.70 1 2.14 10.70 10.30 1.20 1.00 3 2.70 2.30 1.20(2X) 0.90 B 0.60 0.40 0.90 (3X) 0.50 0.50 M A NOTES: 2.74 (2X) 2.34 A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS E. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. 4.60 4.30 www.onsemi.com 9 FCPF600N65S3R0L SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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