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N-Channel UniFETTM FRFET® MOSFET
500 V, 11.5 A, 700 m
Description
Features
• RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
D
G
S
G
D2-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
S
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
- Continuous (TC = 25oC)
Unit
V
±30
V
11.5
- Continuous (TC = 100oC)
- Pulsed
FDB12N50FTM-WS
500
A
6.9
(Note 1)
46
A
(Note 2)
456
mJ
IAR
Avalanche Current
(Note 1)
11.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.5
mJ
dv/dt
Peak Diode Recovery dv/dt
20
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
165
W
1.33
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
RJC
RJA
Parameter
FQB12N50FTM_WS
Thermal Resistance, Junction to Case, Max
0.75
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
62.5
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Unit
oC/W
40
Publication Order Number:
FDB12N50F/D
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
FDB12N50F
Device Marking
FDB12N50F
Device
FDB12N50FTM_WS
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 6A
-
0.59
0.7
gFS
Forward Transconductance
VDS = 40V, ID = 6A
-
12
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
1050
1395
pF
-
135
180
pF
-
11
17
pF
-
21
30
nC
-
6
-
nC
-
9
-
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25
(Note 4)
-
21
50
ns
-
45
100
ns
-
50
110
ns
-
35
80
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.5
V
trr
Reverse Recovery Time
134
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/s
-
0.37
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 11.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
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2
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
30
ID,Drain Current[A]
10
ID,Drain Current[A]
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
o
25 C
*Notes:
1. 250s Pulse Test
0.1
* Notes :
1. VDS = 20V
2. 250s Pulse Test
o
0.05
0.1
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
20
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.9
4
5
6
7
VGS,Gate-Source Voltage[V]
100
0.8
0.7
VGS = 10V
VGS = 20V
0.6
o
150 C
10
o
25 C
Notes:
1. VGS = 0V
o
0.5
* Note : TJ = 25 C
0
6
12
ID, Drain Current [A]
1
0.0
18
2. 250s Pulse Test
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
2.0
Figure 6. Gate Charge Characteristics
10
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
* Note:
1. VGS = 0V
2. f = 1MHz
VGS, Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics
2000
1500
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
IS, Reverse Drain Current [A]
RDS(on) [],
Drain-Source On-Resistance
o
150 C
1000
500
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
30
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
0
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3
* Note : ID = 11.5A
0
4
8
12
16
Qg, Total Gate Charge [nC]
20
24
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
Typical Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
100
20s
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
0.9
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
o
1. TC = 25 C
* Notes :
1. VGS = 0V
2. ID = 250A
0.8
-100
100s
o
0.01
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
vs. Case Temperature
12
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve
1
Z
Response
[o]
C/W]
Thermal
Response
[ZJC
JC(t), Thermal
ID, Drain Current [A]
10
0.5
0.2
0.1
0.1
0.05
PDM
0.02
t1
0.01
0.01
Single pulse
0.001
-5
10
t2
*Notes:
o
1. ZJC(t) = 0.75 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
t1, Square Wave Pulse Duration [sec]
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4
1
10
1000
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
Typical Characteristics (Continued)
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
Figure 11. Gate Charge Test Circuit & Waveform
IG = const.
Figure 12. Resistive Switching Test Circuit & Waveforms
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
DUT
VGS
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
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5
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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VDD
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 15. 2LD,TO263, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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