FDC6561AN

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. SuperSOTTM-6 SOT-23 SuperSOTTM-8 Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-223 SO-8 SOIC-16 D2 S1 1 .56 D1 4 3 5 2 6 1 G2 S2 SuperSOT TM-6 pin 1 Absolute Maximum Ratings Symbol Parameter VDSS G1 TA = 25°C unless otherwise note Ratings Units Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous 2.5 A PD Maximum Power Dissipation - Pulsed TJ,TSTG 10 (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) 0.7 Operating and Storage Temperature Range W -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W © 1999 Fairchild Semiconductor Corporation FDC6561AN Rev.C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV/oC 23.6 TJ = 55 oC 1 µA 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold VoltageTemp.Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5 A TJ = 125 C VGS = 4.5 V, ID = 2.0 A On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 2.5 A 3 V mV/oC -4 o ID(on) 1.8 0.082 0.095 0.122 0.152 0.113 0.145 10 Ω A 5 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 220 pF Coss Output Capacitance f = 1.0 MHz 50 pF Crss Reverse Transfer Capacitance 25 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = 5 V, ID = 1 A, 6 12 ns tr Turn - On Rise Time VGS = 10 V, RGEN = 6 Ω 10 18 ns tD(off) Turn - Off Delay Time 12 22 ns tf Turn - Off Fall Time 2 6 ns Qg Total Gate Charge VDS = 15 V, ID = 2.5 A 2.3 3.2 nC Qgs Gate-Source Charge VGS = 5 V 0.7 1 nC Qgd Gate-Drain Charge 0.9 1.3 nC 0.75 A 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS IS Continuous Source Diode Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.75 A (Note 2) 0.78 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. a. 130OC/W on a 0.125 in2 pad of 2oz copper. b. 140OC/W on a 0.005 in2 pad of 2oz copper. c. 180OC/W on a minimum pad. FDC6561AN Rev.C Typical Electrical Characteristics 2 8 R DS(ON) , NORMALIZED VGS =10V 6.0V 4.5V 4.0V 6 3.5V 4 2 0 3.0V 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 10 1.8 4.5V 1.4 5.0V 6.0V 1.2 7.0V 10V 1 0.8 4 VGS = 4.0V 1.6 0 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate Voltage. 0.3 R DS(ON) , ON-RESISTANCE (OHM) I D = 2.5 A VGS = 10 V 1.4 1.2 1 0.8 0.6 -50 I D = 1.3A 0.25 0.2 0.1 TA = 25°C 0.05 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with Temperature. 10 VDS = 5V TA = -55°C 8 IS , REVERSE DRAIN CURRENT (A) 10 125°C 25°C 6 4 2 0 TA = 125°C 0.15 Figure 3. On-Resistance Variation ID , DRAIN CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5.Transfer Characteristics. 6 V GS = 0V 1 TA = 125°C 25°C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6561AN Rev.C Typical Electrical Characteristics (continued) 500 ID = 2.5A C iss 8 VDS = 5V 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 10V 4 200 100 C oss 50 20 0 0 1 2 Q g , GATE CHARGE (nC) 3 10 0.1 4 Figure 7. Gate Charge Characteristics. IT LIM 1m s 10m s 100 ms 1s DC 0.3 VGS = 10V SINGLE PULSE RθJA =180°C/W TA = 25°C 0.1 0.03 0.01 0.1 SINGLE PULSE RθJA =180°C/W TA = 25°C 4 0.3 POWER (W) ) ON S( RD 100 us 1 3 2 1 1 3 10 30 0 0.01 50 0.1 Figure 9. Maximum Safe Operating Area. TRANSIENT THERMAL RESISTANCE 1 10 100 300 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE 30 5 10 I D , DRAIN CURRENT (A) 0.5 1 2 5 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 30 3 C rss f = 1 MHz V GS = 0V 2 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA =180°C/W 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.02 0.01 0.0001 t2 TJ - T A = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 Single Pulse 0.001 0.01 0.1 1 10 100 300 t 1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC6561AN Rev.C SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figure 1.0 Customize Label Antistatic Cover Tape Conductive Embossed Carrier Tape F63TNR Label 631 Packaging Option Packaging type Standard (no flow code) TNR Qty per Reel/Tube/Bag 3,000 Reel Size 631 631 D87Z SSOT-6 Unit Orientation TNR 10,000 7” Dia 13” 184x187x47 343x343x64 Max qty per Box 9,000 20,000 Weight per unit (gm) 0.0158 0.0158 Weight per Reel (kg) 0.1440 0.4700 Box Dimension (mm) 631 Pin 1 SSOT-6 Packaging Information 343mm x 342mm x 64mm Intermediate box for D87Z Option F63TNR Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for Standard Option F63TNR Label LOT: CBVK741B019 QTY: 3000 FSID: FDC633N SPEC: D/C1: D9842 D/C2: Trailer SSOT-6 Tape Leader Configuration: Figure 2.0 QTY1: QTY2: SPEC REV: CPN: QARV: (F63TNR)2 Carrier Tape Cover Tape  1998 Fairchild Semiconductor Corporation Trailer Tape 160mm minimum Components Leader Tape 390mm minimum December 1998, Rev. B SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-6 (8mm) 3.23 +/-0.10 3.18 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.00 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.37 +/-0.10 0.255 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7” Diameter Option B Min Dim C See detail AA W3 13” Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 8mm 7” Dia 7.00 177.8 8mm 13” Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) December 1998, Rev. B SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SuperSOT-6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158  1998 Fairchild Semiconductor Corporation September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.