FDD86113LZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. „ Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A „ Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A „ HBM ESD protection level > 6 kV typical (Note 4) „ High performance trench technology for extremely low rDS(on) Application „ High power and current handling capability in a widely used surface mount package „ DC-DC conversion „ 100% UIL Tested „ RoHS Compliant D D G G S D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 °C TA = 25 °C -Continuous TJ, TSTG ±20 V (Note 1a) 4.2 A 15 Single Pulse Avalanche Energy PD Units V 5.5 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 12 29 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 4.3 (Note 1a) 96 °C/W Package Marking and Ordering Information Device Marking FDD86113LZ Device FDD86113LZ ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. 1.3 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units www.fairchildsemi.com FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 3 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1 1.5 -5 mV/°C VGS = 10 V, ID = 4.2 A 87 104 VGS = 4.5 V, ID = 3.4 A 116 156 VGS = 10 V, ID = 4.2 A,TJ = 125 °C 142 170 VDS = 5 V, ID = 4.2 A 9 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 213 285 pF 55 75 pF 2.4 5 pF Ω 1.4 Switching Characteristics 3.6 10 1.3 10 ns ns 9.7 20 ns 1.6 10 ns 3.7 6 nC 1.9 3 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 50 V, ID = 4.2 A 0.6 nC Qgd Gate to Drain “Miller” Charge 0.7 nC VDD = 50 V, ID = 4.2 A, VGS = 10 V, RGEN = 6 Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.2 A (Note 2) 0.88 1.3 VGS = 0 V, IS = 1.7 A (Note 2) 0.80 1.2 31 49 ns 20 33 nC IF = 4.2 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 96 °C/W when mounted on a minimum pad of 2 oz copper a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 90 V, VGS = 10 V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. 1.3 2 www.fairchildsemi.com FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 VGS = 4.5 V 12 VGS = 3.5 V 9 VGS = 3 V 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 VGS = 2.5 V 0 0 1 2 3 4 5 VGS = 2.5 V VGS = 3 V 3 VGS = 3.5 V 2 VGS = 4.5 V 1 0 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 400 ID = 4.2 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 IS, REVERSE DRAIN CURRENT (A) 12 VDS = 5 V 9 6 TJ = 25 oC TJ = -55 oC 0 1 2 3 4 5 200 TJ = 125 oC 100 TJ = 25 oC 2 4 6 8 10 20 10 VGS = 0 V 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. 1.3 300 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) 15 TJ = 150 oC ID = 4.2 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On-Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 6 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 1000 ID = 4.2 A VDD = 25 V Ciss CAPACITANCE (pF) 8 VDD = 50 V 6 VDD = 75 V 4 100 10 2 0 Coss Crss f = 1 MHz VGS = 0 V 0 1 2 3 1 0.1 4 Figure 7. Gate Charge Characteristics 10 12 o RθJC = 4.3 C/W ID, DRAIN CURRENT (A) 5 IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 6 4 TJ = 25 oC 3 TJ = 100 oC 2 TJ = 125 oC 10 VGS = 10 V 8 VGS = 4.5 V 6 4 Limited by Package 2 1 0.01 0.1 1 0 25 2 75 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature -1 10 20 VGS = 0 V -2 10 10 -3 ID, DRAIN CURRENT (A) 10 -4 10 TJ = 125 oC -5 10 -6 10 TJ = 25 oC -7 10 -8 10 -9 100 μs 1 THIS AREA IS LIMITED BY rDS(on) 0.1 10 -10 10 50 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Ig, GATE LEAKAGE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0 5 10 15 20 25 30 0.05 0.1 35 1 ms RθJC = 4.3 oC/W 10 ms TC = 25 oC 1 DC 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. 1.3 SINGLE PULSE TJ = MAX RATED Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o 1000 RθJC = 4.3 C/W o TC = 25 C 100 10 -5 10 -4 -3 10 -2 10 -1 10 10 1 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 4.3 C/W 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Case Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. 1.3 5 www.fairchildsemi.com FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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