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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDD8453LZ
N-Channel PowerTrench® MOSFET
40V, 50A, 6.7mΩ
Features
General Description
Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A
HBM ESD protection level >7kV typical (Note 4)
RoHS Compliant
Applications
Inverter
Synchronous Rectifier
D
D
G
G
S
D
-PA
K
TO
-2 52
(TO -252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
50
75
(Note 1a)
16.4
(Note 3)
253
-Pulsed
A
100
Single Pulse Avalanche Energy
EAS
Ratings
40
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
65
(Note 1a)
Operating and Storage Junction Temperature Range
3.1
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.9
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD8453LZ
Device
FDD8453LZ
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
Package
D-PAK (TO-252)
1
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
www.fairchildsemi.com
FDD8453LZ N-Channel PowerTrench® MOSFET
March 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
40
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±10
µA
3.0
V
36
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-6.0
VGS = 10V, ID = 15A
5.8
6.7
VGS = 4.5V, ID = 13A
6.8
8.7
VGS = 10V, ID = 15A,
TJ = 125°C
9.1
10.6
VDS = 5V, ID = 15A
77
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.0
1.8
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
2640
3515
pF
320
425
pF
190
285
pF
Ω
2.3
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20V, ID = 15A,
VGS = 10V, RGEN = 6Ω
VDD = 20V,
ID = 15A
11
19
ns
6
12
ns
37
58
ns
5
10
ns
46
64
nC
24
33
nC
7
nC
8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.0A
(Note 2)
0.7
1.2
VGS = 0V, IS = 15A
(Note 2)
0.8
1.3
25
40
ns
20
32
nC
IF = 15A, di/dt = 100A/µs
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V.
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
2
www.fairchildsemi.com
FDD8453LZ N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
VGS = 4.5V
80
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
100
VGS = 4V
60
VGS = 3.5V
40
20
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
VGS = 3V
3.0
VGS = 3.5V
2.5
2.0
VGS = 4V
1.5
1.0
VGS = 4.5V
0.5
0
0.0
0.4
0.8
1.2
1.6
0
2.0
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
21
ID = 15A
VGS = 10V
ID = 15A
18
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15
12
TJ = 125oC
9
TJ = 25oC
6
3
-50
2
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
ID, DRAIN CURRENT (A)
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
0.6
-75
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
1.6
40
VGS = 10V
VDS = 5V
60
40
TJ = 150oC
TJ = 25oC
20
TJ = -55oC
0
1
2
3
4
VGS = 0V
10
TJ = 150oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
3
1.2
www.fairchildsemi.com
FDD8453LZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4000
ID = 15A
Ciss
8
VDD = 15V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = 20V
4
VDD = 25V
1000
Coss
Crss
2
f = 1MHz
VGS = 0V
100
0.1
0
0
10
20
30
40
50
1
40
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
4
10
Ig, GATE LEAKAGE CURRENT(uA)
IAS, AVALANCHE CURRENT(A)
20
10
TJ = 25oC
TJ = 125oC
1
0.01
VGS = 0V
3
10
2
10
TJ = 150oC
1
10
0
10
TJ = 25oC
-1
10
-2
10
-3
10
-4
0.1
1
10
100
10
1000
0
5
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
15
20
25
ID, DRAIN CURRENT (A)
200
100
60
VGS = 10V
40
VGS = 4.5V
Limited by Package
20
100us
10
THIS AREA IS
LIMITED BY rds(on)
1
1ms
SINGLE PULSE
TJ = MAX RATED
10ms
DC
o
RθJC = 1.9 C/W
o
RθJC = 1.9 C/W
0
25
30
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
80
ID, DRAIN CURRENT (A)
10
VGS, GATE TO SOURCE VOLTAGE (V)
50
TC
75
100
125
0.1
0.1
150
o
TC, CASE TEMPERATURE ( C)
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
= 25oC
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDD8453LZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDD8453LZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
8000
P(PK), PEAK TRANSIENT POWER (W)
VGS =10V
FOR TEMPERATURES
SINGLE PULSE
ABOVE 25oC DERATE PEAK
1000
o
JC = 1.9 C/W
CURRENT ASRθFOLLOWS:
o
150
TC –= T25
CC
-----------------------I = I25
125
TC = 25oC
100
50
-5
10
-4
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
10
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
o
RθJC = 1.9 C/W
0.005
-5
10
-4
-3
10
-2
10
10
-1
10
0
1
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 40 C/W
0.01
0.005
(Note 1a)
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
5
www.fairchildsemi.com
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 96 C/W
(Note 1b)
0.002
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 16. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
6
www.fairchildsemi.com
FDD8453LZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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