FDB8453LZ

FDB8453LZ N-Channel PowerTrench® MOSFET August 2007 FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.0mΩ Features Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A HBM ESD protection level of 7.6kV typical (note 4) Fast Switching RoHS Compliant tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications Inverter Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 40 ±20 50 74 16.1 100 253 66 3.1 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.88 40 °C/W Package Marking and Ordering Information Device Marking FDB8453LZ Device FDB8453LZ Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 1 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V 40 36 1 ±10 V mV/°C µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 17.6A rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 14.9A VGS = 10V, ID = 17.6A, TJ = 125°C VDS = 5V, ID = 17.6A 1.0 1.8 -6.0 6.3 7.3 9.9 84 7.0 9.0 11 S mΩ 3.0 V mV/°C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 2665 325 200 2.2 3545 430 295 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 20V, ID = 17.6A VDD = 20V, ID = 17.6A, VGS = 10V, RGEN = 6Ω 11 6 37 5 47 25 7 9 20 13 60 11 66 35 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.6A VGS = 0V, IS = 17.6A (Note 2) (Note 2) 0.7 0.8 24 15 1.2 1.3 38 27 V ns nC IF = 17.6A, di/dt = 100A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 62.5°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V. 4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 2 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) 4.0 VGS = 10V VGS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4V 3.5 VGS = 3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 80 60 3.0 VGS = 3.5V VGS = 3.5V 2.5 2.0 1.5 1.0 0.5 VGS = 4.5V VGS = 10V VGS = 4V 40 20 VGS = 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 21 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 17.6A VGS = 10V 18 15 12 9 ID = 17.6A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO TJ = 125oC TJ = 25oC 6 3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 0V 80 ID, DRAIN CURRENT (A) 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC VDS = 5V 60 40 20 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 150oC TJ = 25oC TJ = -55oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 3 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 17.6A 4000 Ciss CAPACITANCE (pF) VDD = 15V 8 6 VDD = 20V 1000 Coss 4 VDD = 25V Crss f = 1MHz VGS = 0V 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 100 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT(uA) 2 20 IAS, AVALANCHE CURRENT(A) 10 10 10 10 10 1 VGS = 0V 10 0 TJ = 150oC -1 TJ = 125oC TJ = 25oC TJ = 25oC -2 -3 1 0.01 10 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) -4 0 5 10 15 20 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 80 ID, DRAIN CURRENT (A) Figure 10. Gate Leakage Current vs Gate to Source Voltage 200 100 ID, DRAIN CURRENT (A) 60 VGS = 10V 100us 10 THIS AREA IS LIMITED BY rDS(on) 40 VGS = 4.5V Limited by Package 1ms 10ms DC 1 20 RθJC = 1.88 C/W o SINGLE PULSE TJ = MAX RATED RθJC = 1.88oC/W TC = 25oC 0 25 50 75 100 o 125 150 0.1 0.1 1 10 100 TC, CASE TEMPERATURE ( C) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 4 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 8000 VGS =10V P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE RθJC = 1.88 C/W TC = 25 C o o 1000 100 50 -5 10 -4 -3 -2 -1 0 1 10 10 10 10 10 10 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 0.005 -5 10 SINGLE PULSE RθJC = 1.88 C/W o 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 5 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 6 www.fairchildsemi.com