FDD8453LZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ Features General Description „ Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. „ Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level >7kV typical (Note 4) „ RoHS Compliant Applications „ Inverter „ Synchronous Rectifier D D G G S D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 50 75 (Note 1a) 16.4 (Note 3) 253 -Pulsed A 100 Single Pulse Avalanche Energy EAS Ratings 40 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 65 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.9 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD8453LZ Device FDD8453LZ ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1 Package D-PAK (TO-252) 1 Reel Size 13’’ Tape Width 16mm Quantity 2500 units www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±10 µA 3.0 V 36 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.0 VGS = 10V, ID = 15A 5.8 6.7 VGS = 4.5V, ID = 13A 6.8 8.7 VGS = 10V, ID = 15A, TJ = 125°C 9.1 10.6 VDS = 5V, ID = 15A 77 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 1.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 2640 3515 pF 320 425 pF 190 285 pF Ω 2.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 20V, ID = 15A, VGS = 10V, RGEN = 6Ω VDD = 20V, ID = 15A 11 19 ns 6 12 ns 37 58 ns 5 10 ns 46 64 nC 24 33 nC 7 nC 8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.0A (Note 2) 0.7 1.2 VGS = 0V, IS = 15A (Note 2) 0.8 1.3 25 40 ns 20 32 nC IF = 15A, di/dt = 100A/µs V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper b) 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V. 4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1 2 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 4.5V 80 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 100 VGS = 4V 60 VGS = 3.5V 40 20 VGS = 3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 VGS = 3.5V 2.5 2.0 VGS = 4V 1.5 1.0 VGS = 4.5V 0.5 0 0.0 0.4 0.8 1.2 1.6 0 2.0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 21 ID = 15A VGS = 10V ID = 15A 18 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 15 12 TJ = 125oC 9 TJ = 25oC 6 3 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 80 ID, DRAIN CURRENT (A) 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -75 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.6 40 VGS = 10V VDS = 5V 60 40 TJ = 150oC TJ = 25oC 20 TJ = -55oC 0 1 2 3 4 VGS = 0V 10 TJ = 150oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1 3 1.2 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 ID = 15A Ciss 8 VDD = 15V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 20V 4 VDD = 25V 1000 Coss Crss 2 f = 1MHz VGS = 0V 100 0.1 0 0 10 20 30 40 50 1 40 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 4 10 Ig, GATE LEAKAGE CURRENT(uA) IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC 1 0.01 VGS = 0V 3 10 2 10 TJ = 150oC 1 10 0 10 TJ = 25oC -1 10 -2 10 -3 10 -4 0.1 1 10 100 10 1000 0 5 tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability 15 20 25 ID, DRAIN CURRENT (A) 200 100 60 VGS = 10V 40 VGS = 4.5V Limited by Package 20 100us 10 THIS AREA IS LIMITED BY rds(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms DC o RθJC = 1.9 C/W o RθJC = 1.9 C/W 0 25 30 Figure 10. Gate Leakage Current vs Gate to Source Voltage 80 ID, DRAIN CURRENT (A) 10 VGS, GATE TO SOURCE VOLTAGE (V) 50 TC 75 100 125 0.1 0.1 150 o TC, CASE TEMPERATURE ( C) 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1 = 25oC Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDD8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 8000 P(PK), PEAK TRANSIENT POWER (W) VGS =10V FOR TEMPERATURES SINGLE PULSE ABOVE 25oC DERATE PEAK 1000 o JC = 1.9 C/W CURRENT ASRθFOLLOWS: o 150 TC –= T25 CC -----------------------I = I25 125 TC = 25oC 100 50 -5 10 -4 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 10 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 o RθJC = 1.9 C/W 0.005 -5 10 -4 -3 10 -2 10 10 -1 10 0 1 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 40 C/W 0.01 0.005 (Note 1a) -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1 5 www.fairchildsemi.com 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 96 C/W (Note 1b) 0.002 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 16. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1 6 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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