FDB8453LZ

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G-S zener has been added to enhance ESD voltage level. HBM ESD protection level of 7.6kV typical (note 4) Fast Switching Applications RoHS Compliant Inverter Power Supplies D D G G S TO-263AB FDB Series S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) T C = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range (Note 1a) (Note 3) (Note 1a) Ratings 40 ±20 50 74 16.1 100 253 66 3.1 -55 to +150 Units V V A mJ W °C Thermal Characteristics R R JC Thermal Resistance, Junction to Case JA Thermal Resistance, Junction to Ambient 1.88 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDB8453LZ Device FDB8453LZ ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 Package TO-263AB 1 Reel Size 330mm Tape Width 24mm Quantity 800 units www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET August 2007 Symbol TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0V 40 ID = 250 A, referenced to 25°C V 36 VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V mV/°C 1 ±10 A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 A 1.0 1.8 3.0 ID = 250 A, referenced to 25°C -6.0 VGS = 10V, ID = 17.6A VGS = 4.5V, ID = 14.9A VGS = 10V, ID = 17.6A, TJ = 125°C VDS = 5V, ID = 17.6A 6.3 7.3 7.0 9.0 9.9 11 V mV/°C 84 m S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 2665 3545 pF 325 200 2.2 430 295 pF pF 11 6 37 5 47 25 7 9 20 13 60 11 66 35 ns ns ns ns nC nC nC nC 0.7 0.8 24 15 1.2 1.3 38 27 Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 20V, ID = 17.6A, VGS = 10V, RGEN = 6 VGS = 0V to 10V VGS = 0V to 5V VDD = 20V, ID = 17.6A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.6A VGS = 0V, IS = 17.6A (Note 2) (Note 2) IF = 17.6A, di/dt = 100A/ s V ns nC Notes: 1: R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R JA is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 62.5°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V. 4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 2 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Electrical Characteristics PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 4.5V 80 VGS = 4V 60 VGS = 3.5V 40 20 VGS = 3V 0 0.0 0.4 0.8 1.2 1.6 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 VGS = 3.5V 2.5 2.0 VGS = 4V 1.5 1.0 0.5 2.0 VGS = 4.5V 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) SOURCE ON-RESISTANCE (m ) rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 21 1.4 1.2 1.0 0.8 0.6 -75 -50 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 150oC TJ = 25oC TJ = -55oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 12 TJ = 125oC 9 TJ = 25oC 6 2 4 6 8 10 VGS = 0V 10 TJ = 150oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 15 100 60 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5V 40 100 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 80 ID = 17.6A 18 3 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 100 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 17.6A VGS = 10V 1.6 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.8 40 VGS = 10V 3 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 ID = 17.6A Ciss 8 VDD = 15V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 20V 4 VDD = 25V 2 0 1000 Coss Crss f = 1MHz VGS = 0V 0 10 20 30 40 100 0.1 50 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 2 10 Ig, GATE LEAKAGE CURRENT(uA) IAS, AVALANCHE CURRENT(A) 10 TJ = 25oC TJ = 125oC 1 0.01 VGS = 0V 1 10 0 10 TJ = 150oC -1 10 TJ = 25oC -2 10 -3 10 -4 0.1 1 10 100 10 1000 0 5 10 15 20 VGS, GATE TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 80 200 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 10 Figure 8. Capacitance vs Drain to Source Voltage 20 60 VGS = 10V 40 VGS = 4.5V Limited by Package 20 R 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 100us 10 THIS AREA IS LIMITED BY rDS(on) 1 R o JC = 1.88 C/W 50 75 100 o 125 TC, CASE TEMPERATURE ( C) 0.1 0.1 150 JC TC 10ms DC o = 1.88 C/W = 25oC 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 1ms SINGLE PULSE TJ = MAX RATED 4 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 8000 VGS =10V SINGLE PULSE 1000 R JC o = 1.88 C/W o TC = 25 C 100 50 -5 10 -4 -3 10 -2 10 10 -1 10 0 1 10 10 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, Z JC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JC x R JC + TC SINGLE PULSE R JC o = 1.88 C/W -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 5 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 6 www.fairchildsemi.com FDB8453LZ N-Channel PowerTrench® MOSFET TRADEMARKS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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