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FDD8770/FDU8770
N-Channel PowerTrench® MOSFET
25V, 35A, 4.0mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V
Low gate resistance
LE
RoHS Compliant
AD
F RE E I
MENTA TIO
LE
N
MP
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
D
G
S
Short Lead I-PAK
I-PAK
G D S
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous (Package Limited)
35
ID
-Continuous (Die Limited)
210
-Pulsed
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
(Note 1)
(Note 2)
A
407
113
mJ
115
W
-55 to 175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
1.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
100
°C/W
52
°C/W
RθJA
2
Thermal Resistance, Junction to Ambient TO-252,1in copper pad area
Package Marking and Ordering Information
Device Marking
FDD8770
Device
FDD8770
Package
TO-252AA
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
FDU8770
FDU8770
TO-251AA
N/A(Tube)
N/A
75 units
FDU8770
FDU8770_F071
TO-251AA
N/A(Tube)
N/A
75 units
©2006 Fairchild Semiconductor Corporation
FDD8770/FDU8770 Rev. 1.2
1
www.fairchildsemi.com
FDD8770/FDU8770 N-Channel PowerTrench® MOSFET
March 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20V,
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V
25
V
mV/°C
13.6
1
TJ = 150°C
250
µA
±100
nA
2.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-5.9
VGS = 10V, ID = 35A
3.3
4.0
VGS = 4.5V, ID = 35A
4.0
5.5
VGS = 10V, ID = 35A
TJ = 175°C
4.8
5.9
2795
3720
pF
685
915
pF
450
675
pF
rDS(on)
Drain to Source On Resistance
1.2
1.6
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
Ω
1.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
VDD = 13V, ID = 35A
VGS = 10V, RGS = 5Ω
VDD = 13V
ID = 35A
Ig = 1.0mA
10
20
ns
12
22
ns
49
78
ns
25
40
ns
52
73
nC
29
41
nC
8.1
nC
11
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 35A
0.84
1.25
VGS = 0V, IS = 15A
0.79
1.0
IF = 35A, di/dt = 100A/µs
32
48
ns
IF = 35A, di/dt = 100A/µs
25
38
nC
V
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V.
2
FDD8770/FDU8770 Rev. 1.2
www.fairchildsemi.com
FDD8770/FDU8770 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = 10V
ID, DRAIN CURRENT (A)
100
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
VGS = 3.5V
80
VGS = 3V
60
40
20
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
3
VGS = 3.5V
2
VGS = 4.5V
1
VGS = 10V
0
0
20
40
60
80
ID, DRAIN CURRENT(A)
100
120
12
1.8
ID = 35A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 35A
10
8
TJ = 175oC
6
4
TJ = 25oC
2
2
Figure 3. Normalized On Resistance vs Junction
Temperature
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
120
IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
100
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
rDS(on), ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
4
80
TJ = 175oC
60
40
TJ = 25oC
TJ = -55oC
20
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
10
1
TJ = 175oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
FDD8770/FDU8770 Rev. 1.2
VGS = 0V
www.fairchildsemi.com
FDD8770/FDU8770 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
6000
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 10V
6
VDD = 13V
4
VDD = 16V
2
0
0
10
20
30
40
50
Coss
1000
Crss
f = 1MHz
VGS = 0V
100 0.1
60
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
30
250
TJ = 25oC
10
TJ = 125oC
TJ = 150oC
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
10us
100
100us
10
1ms
LIMITED BY
PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
10ms
DC
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
VGS = 4.5V
100
o
RθJC = 1.3 C/W
50
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
20000
10000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 – T C
----------------------150
I = I25
1000
SINGLE PULSE
100
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
FDD8770/FDU8770 Rev. 1.2
VGS = 10V
150
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
P(PK), PEAK TRANSIENT POWER (W)
600
200
0
25
100 300
Figure 9. Unclamped Inductive Switching
Capability
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain to Source Voltage
50
0.1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
www.fairchildsemi.com
FDD8770/FDU8770 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 13. Transient Thermal Response Curve
5
FDD8770/FDU8770 Rev. 1.2
www.fairchildsemi.com
FDD8770/FDU8770 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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