FDMC6675BZ

FDMC6675BZ P-Channel POWERTRENCH) MOSFET −30 V, −20 A, 14.4 mW Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection. www.onsemi.com VDS RDS(on) MAX ID MAX −30 V 14.4 mW @ 10 V −20 A Features • • • • • • • Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A HBM ESD Protection Level of 8 kV Typical (Note 3) Extended VGSS Range (−25 V) for Battery Applications High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant P−Channel S 1 8 D S 2 7 D S 3 6 D G 4 5 D Typical Applications Pin 1 • Load Switch in Notebook and Server • Notebook Battery Pack Power Management SS S G D DD D Bottom Top WDFN8 3.3x3.3, 0.65P CASE 511DR MARKING DIAGRAM $Y&Z&2&K FDMC 6675BZ $Y &Z &2 &K FDMC6675BZ = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 September, 2018 − Rev. 4 1 Publication Order Number: FDMC6675BZ/D FDMC6675BZ MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified) Parameter Symbol Ratings Unit VDS Drain to Source Voltage −30 V VGS Gate to Source Voltage ±25 V A ID Drain Current − Continuous TC = 25°C −20 − Continuous TA = 25°C (Note 1a) −9.5 −32 − Pulsed PD TJ, TSTG Power Dissipation TC = 25°C 36 Power Dissipation TA = 25°C (Note 1a) 2.3 W °C −55 to +150 Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit °C/W RqJC Thermal Resistance, Junction to Case 3.4 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 53 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping (Qty / Packing)† FDMC6675BZ FDMC6675BZ WDFN8 3.3x3.3, 0.65P (MLP) (Pb−Free/Halogen Free) 13″ 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit −30 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C − −20 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V VDS = −24 V, VGS = 0 V, TJ = 125°C − − − − −1 −100 mA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V − − ±10 mA −1.0 −1.9 −3.0 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA DV GS(th) DT J Gate to Source Threshold Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C − −6.0 − mV/°C RDS(on) Static Drain to Source On Resistance VGS = −10 V, ID = −9.5 A − 10.7 14.4 mW VGS = −4.5 V, ID = −6.9 A − 17.4 27.0 VGS = −10 V, ID = −9.5 A, TJ = 125°C − 15.2 20.5 VDD = −5 V, ID = −9.5 A − 28 − gFS Forward Transconductance www.onsemi.com 2 S FDMC6675BZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss VDS = −15 V, VGS = 0 V, f = 1 MHz − 2154 2865 pF Output Capacitance − 392 525 pF Reverse Transfer Capacitance − 349 525 pF − 11 20 ns SWITCHING CHARACTERISTICS td(on) tr Turn−On Delay Time Rise Time td(off) tf VDD = −15 V, ID = −9.5 A, VGS = −10 V, RGEN = 6 W − 10 20 Turn−off Delay Time − 44 71 Fall Time − 26 42 Qg Total Gate Charge VGS = 0V to −10 V, VDD = −15 V, ID = −9.5 A − 46 65 nC Qg Total Gate Charge VGS = 0V to −5 V, VDD = −15 V, ID = −9.5 A − 26 37 nC Qgs Gate to Source Charge VDD = −15 V, ID = −9.5 A − 6.4 − nC Qgd Gate to Drain ”Miller” Charge VDD = −15 V, ID = −9.5 A − 13 − nC Source to Drain Diode Forward Voltage VGS = 0 V, IS = −9.5 A (Note 2) − −0.89 −1.3 V VGS = 0 V, IS = −1.6 A (Note 2) − −0.73 −1.2 V trr Reverse Recovery Time IF = −9.5 A, di/dt = 100 A/ms − 24 38 ns Qrr Reverse Recovery Charge − 15 27 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a) 53°C/W when mounted on a 1 in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 FDMC6675BZ TYPICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) 5.0 VGS = −4.5 V 24 VGS = −6 V VGS = −10 V 16 VGS = −3.5 V 8 Pulse Duration = 80 μs Duty Cycle = 0.5% Max 0 0.0 Pulse Duration = 80 μs Duty Cycle = 0.5% Max 4.5 VGS = −4 V Normalized Drain to Source On−resistance ID, Drain Current [A] 32 VGS = −3.5 V 4.0 3.5 VGS = −4 V 3.0 2.5 VGS = −4.5 V 2.0 VGS = −6 V 1.5 1.0 VGS = −10 V 0.5 0.5 1.0 1.5 2.0 2.5 0 3.0 8 VDS, Drain-Source Voltage [V] 16 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage 1.6 50 Pulse Duration = 80 μs Duty Cycle = 0.5% Max VGS = −10 V rDS(on) Drain to Source On−resistance Normalized Drain to Source On−resistance ID = −9.5 A 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 40 ID = −9.5 A 30 TJ = 125 oC 20 10 TJ = 25 oC 0 75 100 125 150 2 tAV, Time in Avalanche (ms) 4 6 8 10 VGS, Gate to Source Voltage [V] Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On−Resistance vs Gate to Source Voltage 100 32 IS, Reverse Drain Current (A) Pulse Duration = 80 μs Duty Cycle = 0.5% Max ID, Drain Current (A) 32 ID, Drain Current (A) Figure 1. On-Region Characteristics 1.4 24 24 VDS = −5 V 16 TJ = 150 oC TJ = 25 oC 8 TJ = −55 oC 1 2 3 4 10 TJ = 150 oC TJ = 25 oC 0.1 TJ = −55oC 0.01 0.2 0 0 VGS = 0 V 5 VGS, Gate to Source Voltage (V) 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 FDMC6675BZ TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 10 5000 ID = −9.5 A 8 Capacitance (pF) VGS, Gate to Source Voltage (V) (TJ = 25 °C unless otherwise noted) VDD = −10 V 6 VDD = −15 V 4 VDD = −20 V Ciss 1000 Coss 2 0 0 10 20 30 40 100 0.1 50 1 Qg, Gate Charge [nC] 30 Figure 8. Capacitance vs Drain to Source Voltage 50 50 ID, Drain Current (A) IAS, Avalanche Current (A) 10 VDS, Drain to Source Voltage Figure 7. Gate Charge Characteristics TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 40 VGS = −10 V VGS = −4.5 V 30 20 Limited by Package 10 o RqJC = 3.4 C/W 1 0.001 0.01 0.1 1 10 0 100 25 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature (5C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature −4 70 10 Ig, Gate Leakage Current (A) ID, Drain Current (A) Crss f = 1 MHz VGS = 0 V 10 1 ms 10 ms 1 THIS AREA IS LIMITED BY r DS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RqJA = 125 oC/W 10 s DC TA = 25 oC VGS = 0V −5 10 TJ = 150oC −6 10 −7 10 TJ = 25oC −8 10 −9 0.01 10 0.01 0.1 1 10 100 0 VDS, Drain to Source Voltage (V) 5 10 15 20 25 VGS, Gate to Source Voltage (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Igss vs Vgss www.onsemi.com 5 30 FDMC6675BZ TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (TJ = 25 °C unless otherwise noted) P(PK) , Peak Transient Power (W) 1000 VGS = − 10 V 100 SINGLE PULSE RθJA = 125°C/W 10 TA = 25°c 1 0.3 −3 10 −2 −1 10 10 11 0 100 1000 t, Pulse Width (sec) Figure 13. Single Pulse Maximum Power Dissipation r(t), Normalized Effective Transient Thermal Resistance 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 Notes: ZqJA(t) = r(t) × RqJA RqJA = 125°C/W Peak TJ = PDM × ZqJA(t) + TC Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 −3 10 −2 10 −1 10 11 0 100 t, Rectangular Pulse Duration (s) Figure 14. Junction−to−Ambient Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC and/or other countries. www.onsemi.com 6 t2 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DR ISSUE B GENERIC MARKING DIAGRAM* XXXX AYWWG G DOCUMENT NUMBER: DESCRIPTION: XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 98AON13650G WDFN8 3.3x3.3, 0.65P DATE 02 FEB 2022 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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