FDMQ86530L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 60 V, 8 A, 17.5 mΩ Features General Description This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. „ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A „ Substantial efficiency benefit in PD solutions Applications „ RoHS Compliant „ Active bridge „ Diode Bridge replacement in 24V & 48V AC systems Bottom Top G4 D1/D4 D3/S4 G3 S3 S3 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 D1/D4 D3/ S4 S1/ D2 G1 G4 D1/D4 S1/D2 D1/D4 Q1 Q4 G2 G3 S2 S2 D3/S4 S3 Q2 Q3 S3 MLP 4.5x5 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG Units V ±20 V 8 (Note 1a) -Pulsed PD Ratings 60 8 A 50 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 22 (Note 1a) Operating and Storage Junction Temperature Range 1.9 -55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 135 °C/W Package Marking and Ordering Information Device Marking FDMQ86530L Device FDMQ86530L ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 Package MLP 4.5x5 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 60 V 27 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1 1.8 mV/°C VGS = 10 V, ID = 8 A 12 17.5 VGS = 6 V, ID = 7 A 15 23 VGS = 4.5 V, ID = 6.5 A 20 25 VGS = 10 V, ID = 8 A, TJ = 125 °C 18 26 VDS = 5 V, ID = 8 A 28 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 30 V, VGS = 0 V, f = 1 MHz 1725 2295 pF 299 400 pF 10 15 pF Switching Characteristics td(on) Turn-On Delay Time 8.8 18 ns tr Rise Time 3.8 10 ns td(off) Turn-Off Delay Time 22 35 ns tf Fall Time 2.8 10 ns nC VDD = 30 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V 23 33 Qg Total Gate Charge 11 16 Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 30 V, ID = 8 A Qgd Gate to Drain “Miller” Charge nC 5.1 nC 2.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 IF = 8 A, di/dt = 100 A/μs V 27 43 ns 12 22 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4. b. 135 °C/W when mounted on a minimum pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 2 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 4.5 V VGS = 6 V 40 VGS = 5 V VGS = 4 V 30 20 VGS = 3.5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 5 VGS = 3.5 V 3 VGS = 4.5 V VGS = 5 V 2 1 VGS = 6 V 0 1.5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 8 A VGS = 10 V 40 50 ID = 8 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 30 TJ = 125 oC 20 10 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 30 TJ = 150 oC TJ = 25 TJ = -55 2 3 oC oC 4 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 8 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 6 Figure 4. On-Resistance vs Gate to Source Voltage 50 20 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 30 50 1.6 1 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 40 VGS = 4 V 4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ID = 8 A Ciss VDD = 20 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10000 10 VDD = 30 V 6 VDD = 40 V 4 1000 Coss 100 Crss 10 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 1 0.1 25 1 Figure 7. Gate Charge Characteristics 3000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 60 Figure 8. Capacitance vs Drain to Source Voltage 70 10 1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W 1s 10 s DERIVED FROM TEST DATA 0.01 TA = 25 oC 0.005 0.01 0.1 1 DC 10 100 300 SINGLE PULSE RθJA = 135 oC/W 1000 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) 2 1 0.1 -2 10 -1 10 1 1000 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 135 C/W 0.001 0.0001 -4 10 100 10 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJA 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 4 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 4.45 2.22 5.00 A 0.10 C (0.40) B 2X 1.78 12 (0.50) 2.17 7 (0.50)2X 1.00(2X) 2.50 4.50 (0.50) 4.80 PIN#1 IDENT AREA 2.40 (0.65) 0.10 C TOP VIEW 1 2X 0.80 0.80 MAX 0.40 6 (12X) RECOMMENDED LAND PATTERN 0.10 C (0.20) 0.08 C 0.05 0.00 NOTES: A. THIS MKT. DWG. DOES NOT FULLY CONFORM TO JEDEC MO-229 REGISTRATION B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. D. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY. E. DRAWING FILENAME: MKT-MLP12FRev1. C SIDE VIEW SEATING PLANE 1 1.75 1.65 5.00 ? .10 4.35 4.25 2.15 2.05 (0.35) 6 PIN#1 IDENT 1.05 (2X) 0.95 4.50 ? . 10 2.55 2.45 (0.50) 2.25 0.55 0.45 (0.50)2X 0.10 0.05 12 0.80 C A B C 7 (0.50) 0.35(12X) 0.25 2.50 BOTTOM VIEW ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 5 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 6 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® AX-CAP * PowerTrench FRFET SM BitSiC™ Global Power Resource PowerXS™ TinyBoost™ Build it Now™ Green Bridge™ Programmable Active Droop™ TinyBuck™ CorePLUS™ Green FPS™ QFET® TinyCalc™ CorePOWER™ Green FPS™ e-Series™ QS™ TinyLogic® CROSSVOLT™ Gmax™ Quiet Series™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® and Better™ EcoSPARK® SignalWise™ TriFault Detect™ MegaBuck™ SmartMax™ EfficentMax™ TRUECURRENT®* MICROCOUPLER™ SMART START™ ESBC™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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