FDMQ8403

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH), GreenBridget Series of High-Efficiency Bridge Rectifiers VDSS RDS(ON) MAX ID MAX 100 V 110 W @ 10 V 6A Pin 1 G4 D1/D4 D3/S4 G3 S3 S3 100 V, 6 A, 110 mW WDFN12 5 x 4.5, 0.8P (MLP 4.5 x 5) CASE 511CR FDMQ8403 General Description MARKING DIAGRAM This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features • • • • $Y&Z&2&K FDMQ 8403 Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A Substantial Efficiency Benefit in PD Solutions This Device is Pb−Free, Halid Free and is RoHS Compliant FDMQ8403 = Specific Device Code $Y = onsemi Logo &Z = Assembly plant code &2 = Date Code format (Year and Week) &K = Lot Run Traceability Code Applications • High−Efficiency Bridge Rectifiers MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID PD TJ, TSTG G1 D1/D4 S1/D2 G2 S2 S2 Drain Current − Continuous (Package Limited) − Continuous (Silicon Limited) − Continuous (Note 1a.) − Pulsed TC = 25°C TC = 25°C TA = 25°C 6 9 3.1 12 Power Dissipation TC = 25°C 17 Power Dissipation (Note 1a.) TA = 25°C 1.9 Operating and Storage Junction Temperature Range A PIN CONNECTION S3 7 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Q2 6 S2 8 5 S2 G3 9 4 G2 S3 D3/S4 10 W Q3 D1/D4 11 G4 12 Q4 Q1 3 S1/D2 2 D1/D4 1 G1 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL CHARACTERISTICS Symbol Rating Value Unit °C/W RqJA Thermal Resistance, Junction to Ambient (Note 1a.) 65 RqJA Thermal Resistance, Junction to Ambient (Note 1b.) 135 © Semiconductor Components Industries, LLC, 2012 July, 2022 − Rev. 3 1 Publication Order Number: FDMQ8403/D FDMQ8403 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit 100 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 mA DBV DSS Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 72 − mV/°C IDSS Zero Gate Voltage Drain Current VGS = 0 V, VDS = 80 V − − 1 nA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 mA DT J OFF CHARACTERISTICS VGS(th) Drain to Source Breakdown Voltage VGS = VDS, ID = 250 mA 2 2.8 4 V DV GS(th) Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − −8 − mV/°C Static Drain to Source On Resistance VGS = 10 V, ID = 3 A − 85 110 mW VGS = 6 V, ID = 2.4 A − 115 175 VGS = 10 V, ID = 3 A, TJ = 125°C − 147 191 VDS = 10 V, ID = 3 A − 6 − S VDS = 50 V, VGS = 0 V, f = 1 MHz − 162 215 pF DT J rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 43 60 pF Crss Reverse Transfer Capacitance − 2.6 5 pF − 4.1 10 ns − 1.2 10 ns Turn−Off Delay Time − 7.2 15 ns Fall Time − 1.8 10 ns − 3 5 nC − 1.7 3 nC DYNAMIC CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time VDD = 50 V, ID = 3 A, VGS = 10 V, RGEN = 6 W VDD = 50 V, ID = 3 A Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge 0.9 − nC Gate to Drain “Miller” Charge VDD = 50 V, ID = 3 A − Qgd − 0.8 − nC Source to Drain Diode Forward Voltage VGS = 0 V, IS = 3 A (Note 2) − 0.86 1.3 V trr Reverse Recovery Time IF = 3 A, di/dt = 100 A/ms − 33 53 ns Qrr Reverse Recovery Charge − 23 37 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 65°C/W when mounted on a 1 in2 pad of 2 oz copper, the board designed Q1 + Q3 or Q2 + Q4. b. 135°C/W when mounted on a minimum pad of 2 oz copper, the board designed Q1 + Q3 or Q2 + Q4. 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. www.onsemi.com 2 FDMQ8403 ID, DRAIN CURRENT (A) 12 VGS = 10 V VGS = 8 V VGS = 7 V 9 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted. VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 1 0 2 3 4 5 5 4 VGS = 6 V 3 2 VGS = 7 V 1 0 0 3 1.6 1.4 1.2 1.0 0.8 −25 0 25 50 75 100 125 300 200 TJ = 125°C 100 0 150 TJ = 25°C 4 TJ, JUNCTION TEMPERATURE (°C) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V TJ = 150°C 6 TJ = 25°C 3 TJ = −55°C 3 4 5 6 6 8 7 9 10 Figure 4. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 2 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature 9 12 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX ID = 3 A rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 400 ID = 3 A 1.8 VGS = 10 V −50 9 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 2.0 0 6 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 0.6 −75 VGS = 10 V VGS = 8 V VDS, DRAIN TO SOURCE VOLTAGE (V) 12 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VGS = 5 V 20 10 1 TJ = 150°C TJ = 25°C 0.1 0.01 0.001 0.2 7 VGS = 0 V TJ = −55°C 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDMQ8403 1000 10 ID = 3 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLATGE (V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) VDD = 75 V 6 4 Ciss 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0.5 0 1.0 2.0 1.5 2.5 3.0 1 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 20 10 100 ms 1 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED RqJA = 135°C/W TA = 25°C 1 1s 10 s DC 10 100 300 500 100 10 1 SINGLE PULSE RqJA = 135°C/W TA = 25°C 0.5 10−4 10−3 10−2 Figure 9. Forward Bias Safe Operating Area ZQJA, NORMALIZED THERMAL IMPEDANCE 10−1 1 10 100 1000 t, PULSE WIDTH (s) VDS, DRAIN TO SOURCE VOLTAGE (V) 2 100 Figure 8. Capacitance vs. Drain to Source Voltage Figure 7. Gate Charge Characteristics 0.01 0.005 0.1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.1 Crss 1 0.1 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE−DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM × ZqJA × RqJA+ TA 0.01 SINGLE PULSE RqJA = 135°C/W 0.001 10−4 10−3 10−2 10−1 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Junction−to−Ambient Transient Thermal Response Curve www.onsemi.com 4 100 1000 FDMQ8403 ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† FDMQ8403 FDMQ8403 WDFN12 (Pb−Free) 13" 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. GreenBridge is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN12 5x4.5, 0.8P CASE 511CR ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13606G WDFN12 5X4.5, 0.8P DATE 21 MAR 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative