FDMQ8205

DATA SHEET www.onsemi.com GreenBridget2 Series of High-Efficiency Bridge Rectifiers FDMQ8205 WDFN12 5x4.5, 0.8P CASE 511CS General Description FDMQ8205 is GreenBridge 2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high−efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205 is configured with low RDS(on) dual P−ch MOSFETs and N−ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205 enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications. FDMQ8205 GreenBridge 2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification requirement as well as small backfeed voltage. Features • • • • • • • • MARKING DIAGRAM $Y&Z&2&K FDMQ 8205 FDMQ8205 = Specific Device Code $Y = onsemi Logo &Z = Assembly plant code &2 = Date Code format(Year and Week) &K = Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. Low Power Loss GreenBridge Replaces Diode Bridge Self Driving Circuitry for MOSFETs Low RDS(on) 80 V Rated MOSFETs Maximizing Available Power and Voltage Eliminating Thermal Design Problems IEEE802.3at Compatible ♦ Meet Detection and Classification Requirement ♦ Work with 2 and 4−pair Architecture ♦ Small Backfeed Voltage Compact MLP 4.5 x 5 Package These Device is Pb−Free and Halogen Free. Applications • Power over Ethernet (PoE) Power Device (PD) ♦ ♦ ♦ ♦ ♦ ♦ IP Phones Network Cameras Wireless Access Points Thin Clients Microcell Femtocell © Semiconductor Components Industries, LLC, 2021 April, 2022 − Rev. 2 1 Publication Order Number: FDMQ8205/D FDMQ8205 TYPICAL APPLICATION RJ45 Connector 1 POUT G3 G2 FDMQ8205 2 VOUTP INPUT1 INPUT2 3 0.1 mF TVS G1 G4 6 PoE PD Interface 22 mF NOUT 4 VOUTN POUT 5 G3 G2 FDMQ8205 7 INPUT1 INPUT2 8 G1 G4 NOUT Figure 1. Typical Application of Power Device for Power over Ethernet BLOCK DIAGRAM OUTP OUTP Q3 G3 Q2 Gate Gate driven driven Q4 G4 G2 Q1 Gate Gate driven driven OUTN INPUT2 INPUT1 OUTN Figure 2. Block Diagram www.onsemi.com 2 G1 Isolated DC/DC Converter VOUT+ VOUT− FDMQ8205 PIN CONFIGURATION 1 G1 2 OUTN 10 3 OUTN G3 9 4 G2 OUTP 8 5 OUTP 6 OUTP G4 12 OUTN 11 OUTN OUTP INPUT2 INPUT1 (16) (13) INPUT2 INPUT1 (15) (14) 7 MLP 4.5x5 Figure 3. Pin Assignment (Bottom View) PIN DESCRIPTION Pin No. Name Description 1 G1 Gate of Q1 N−ch MOSFET 4 G2 Gate of Q2 P−ch MOSFET 9 G3 Gate of Q3 P−ch MOSFET 12 G4 Gate of Q4 N−ch MOSFET 13, 14 INPUT1 Input1 of GreenBridge 15, 16 INPUT2 Input2 of GreenBridge 2, 3, 11, 10 OUTN Negative Output of GreenBridge 5, 6, 7, 8 OUTP Positive Output of GreenBridge 1. Show the feature that provides orientation or pin 1 location. www.onsemi.com 3 FDMQ8205 ABSOLUTE MAXIMUM RATINGS Min Max Unit INPUT1, INPUT2 to OUTN − 80 V OUTP to INPUT1, INPUT2 − 80 V INPUT1 to INPUT2 − 80 V INPUT2 to INPUT1 − 80 V OUTP to OUTN − 80 V G1, G2, G3, G4 to OUTN − 70 V OUTP to G1, G2, G3, G4 − 70 V VG_TRANSIENT Transient Gate Voltage, Pulse Width < 200 ms, Duty Cycle < 0.003% − 100 V Continuous IINPUT (GreenBridge Current, Q1 + Q3 or Q2 + Q4) TA = 25°C (Note 2a) − 3.0 A TA = 25°C (Note 2b) − 1.7 A Pulsed IINPUT (Q1 + Q3 or Q2 + Q4) Pulse Width < 300 ms, Duty Cycle < 2% (Note 3) − 58 A PD (Power Dissipation, Q1 + Q3 or Q2 + Q4) TA = 25°C (Note 2a) − 2.5 W TA = 25°C (Note 2b) − 0.78 W − 150 °C Max Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper, the board designed Q1 + Q3 or Q2 + Q4. b. 160°C/W when mounted on a minimum pad of 2 oz copper, the board designed Q1 + Q3 or Q2 + Q4. OUTP S OUTP F OUTN S OUTN F OUTP S OUTP F OUTN S OUTN F 3. Pulse Id measured at td ≤ 300 ms, refer to SOA graph for more details. THERMAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit °C/W RqJC Thermal Resistance, Junction to Case − 5.1 − RqJA Thermal Resistance, Junction to Ambient (Note 2a) − 50 − RqJA Thermal Resistance, Junction to Ambient (Note 2b) − 160 − www.onsemi.com 4 FDMQ8205 RECOMMENDED OPERATING CONDITIONS Symbol Min Max Unit Input Voltage of Bridge INPUT1 to INPUT2 or INPUT2 to INPUT1 − 57 V Gate Voltage of MOSFETs G1, G4 to OUTN G2, G3 to OUTP − 57 V Input Current of Bridge Bridge Current through Q2 and Q4 or (Q3 and Q1) − 1.7 A Ambient Operation Temperature (TA) −40 85 °C Junction Operating Temperature (TJ) (Note 4) −40 125 °C VINPUT VG IINPUT Parameter Conditions Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 4. Backfeed Voltage can not be guaranteed for junction temperature in excess of 85°C. See VBF in Electrical Characteristics Table. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol VINPUT Parameter Conditions Min Typ Max Unit Input Voltage of Bridge At INPUT1 to INPUT2 or INPUT2 to INPUT1 − − 57 V VG Gate Voltage of MOSFETs At G1, G4 to OUTN and G2, G3 to OUTP − − 57 V IQ Quiescent Current Detection Mode 1.5 V < VINPUT = VG < 10.1 V (Note 5) − − 5 mA Classification Mode 10.2 V < VINPUT = VG < 23.9 V (Note 5) − − 400 mA Power On Mode Maximum VINPUT = VG = 57 V (Note 5) − − 3.2 mA VTURN_ON Turn−On Voltage of MOSFETs Turn−On of MOSFETs while VG Increases (Note 4) 32 − 36 V ILEAKAGE Turn−Off Leakage Current VOUTP = 57 V, VOUTN = 0 V TJ = −40°C to 85°C (Note 5) − − 700 mA Backfeed Voltage VOUTP = 57 V, VOUTN = 0 V, 100 kW between INPUT1 and INPUT2 TJ = −40°C to 85°C (Note 5) − − 2.7 V N−ch MOSFET VG = 42 V, IINPUT = 1.5 A, TA = 25°C − 35 51 mW VG = 48 V, IINPUT = 1.5 A, TA = 25°C − 29 44 mW VG = 57 V, IINPUT = 1.5 A, TA = 25°C − 26 37 mW VG = −42 V, IINPUT = −1.5 A, TA = 25°C − 95 147 mW VG = −48 V, IINPUT = −1.5 A, TA = 25°C − 83 125 mW VG = −57 V, IINPUT = −1.5 A, TA = 25°C − 76 107 mW VBF RDS(on) P−ch MOSFET Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. INPUT1 is connected to G3 and G4 and also INPUT2 is connected to G1 and G2 like below. VOUT+ OUTP G2 G3 FDMQ8205 INPUT2 INPUT1 INPUT2 G1 G4 OUTN INPUT1 VOUT+ www.onsemi.com 5 FDMQ8205 TYPICAL CHARACTERISTICS (Q1 OR Q4 N−CHANNEL) 2.0 IS, REVERSE DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE (TJ = 25°C unless otherwise noted.) ID = 1.7 A VGS = 57 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 10 1 10 −1 10 −2 10 −3 10 −4 10 −5 Ig, GATE LEAKAGE CURRENT (A) 10 −2 10 −3 10 −4 10 −5 10 −6 10 −7 10 −8 10 −9 TJ = 125°C TJ = 25°C 10 20 30 40 50 TJ = 25°C TJ = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5. Source to Drain Diode Forward Voltage vs. Source Current VDS = 0 V 0 TJ = 150°C VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 4. Normalized On Resistance vs. Junction Temperature −1 VGS = 0 V 10 TJ, JUNCTION TEMPERATURE (°C) 10 2 70 60 VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Gate Leakage Current vs. Gate to Source Voltage www.onsemi.com 6 FDMQ8205 TYPICAL CHARACTERISTICS (Q2 OR Q3 P−CHANNEL) 1.8 −IS, REVERSE DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE (TJ = 25°C unless otherwise noted.) ID = −1.7 A 1.6 VGS = −57 V 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 10 1 −Ig, GATE LEAKAGE CURRENT (A) 10 −2 10 −3 10 −4 10 −5 10 −6 10 −7 10 −8 10 −9 10 10 −2 10 −3 10 −4 10 −5 TJ = 125°C TJ = 25°C 10 20 30 40 50 60 TJ = 25°C TJ = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 Figure 8. Source to Drain Diode Forward Voltage vs. Source Current VDS = 0 V 0 TJ = 150°C −1 −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Normalized On Resistance vs. Junction Temperature −1 VGS = 0 V 10 TJ, JUNCTION TEMPERATURE (°C) 10 2 70 −VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs. Gate to Source Voltage www.onsemi.com 7 FDMQ8205 TYPICAL CHARACTERISTICS (Q1 + Q3 OR Q2 + Q4 IN SERIAL) ID, DRAIN CURRENT (A) 100 THIS AREA IS LIMITED BY rDS(on) 10 P(PK), PEAK TRANSIENT POWER (W) (TJ = 25°C unless otherwise noted.) 100 ms 1 ms 1 10 ms 100 ms 0.1 0.01 0.001 0.01 1s 10 s DC SINGLE PULSE TJ = MAX RATED RqJA = 160°C/W TA = 25°C 0.1 1 10 100 400 2000 1000 100 VDS, DRAIN TO SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 −1 10 −2 10 −3 10 −4 10 1 0.1 10−4 SINGLE PULSE RqJA = 160°C/W TA = 25°C 10−3 10−2 10−1 1 ILEAKAGE, LEAKAGE CURRENT (mA) 103 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJA (t) = r(t) x RqJA RqJA = 160°C/W DUTY FACTOR: D = t1 / t2 TJ − TA = PDM x ZqJA (t) SINGLE PULSE −4 −3 10 10 −2 −1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) 0.6 0.5 0.4 0.3 TJ = 85°C 0.2 TJ = 25°C 0.1 TJ = −40°C 0 102 Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Junction−to−Ambient Transient Thermal Response Curve 0 10 t, PULSE WIDTH (sec) Figure 10. Forward Bias Safe Operating Area 2 1 10 15 30 45 60 OUTP to OUTN (V) Figure 13. Leakage vs. Output Voltage Curve www.onsemi.com 8 100 1000 FDMQ8205 ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† FDMQ8205 FDMQ8205 MLP4.5x5 13" 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. StaGreenBridge is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN12 5x4.5, 0.8P CASE 511CS ISSUE O 5.00 0.10 C DATE 31 AUG 2016 A 2X B 12 4.45 (0.40) (0.25) 2.10(4X) 7 1.00(4X) 4.50 PIN#1 IDENT AREA 3.50 4.80 (0.50) (0.50)2X 0.10 C TOP VIEW 2X (0.65) 1 0.80 0.40 (12x) 6 RECOMMENDED LAND PATTERN 0.80 MAX 0.10 C (0.20) 0.08 C 0.05 0.00 SEATING PLANE C SIDE VIEW 5.00±0.05 1.95 (4X) 1.85 1 6 (0.35)4X NOTES: A. PACKAGE DOES NOT FULLY CONFORM TO JEDEC MO−229 REGISTRATION B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. (0.50)2X PIN#1 IDENT (0.50)2X 4.50±0.05 1.05 (4X) 0.95 0.55 0.45 0.10 0.05 12 0.80 2.40 C A B C 7 0.35 (12X) 0.25 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13607G WDFN12 5X4.5, 0.8P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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