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FDN028N20
N-Channel PowerTrench® MOSFET
20 V, 6.1 A, 28 mΩ
Features
General Description
Max rDS(on) = 28 mΩ at VGS = 4.5 V, ID = 5.2 A
This N-Channel PowerTrench MOSFET is produced using
Fairchild’s advanced PowerTrench® process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
Max rDS(on) = 45 mΩ at VGS = 2.5 V, ID = 4.4 A
High Performance Trench Technology for Extremely Low
rDS(on)
Applications
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
Primary DC-DC Switch
Fast Switching Speed
Load Switch
100% UIL Tested
RoHS Compliant
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
TA = 25°C
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
Ratings
20
Units
V
V
(Note 3)
±12
(Note 1a)
6.1
(Note 5)
52
(Note 4)
6
Power Dissipation
( Note 1a)
1.5
Power Dissipation
(Note 1b)
0.6
Operating and Storage Junction Temperature Range
A
mJ
W
-55 to + 150
°C
(Note 1)
75
°C/W
(Note 1a)
80
°C/W
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
28N
Device
FDN028N20
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
Package
SSOT-3
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDN028N20 N-Channel PowerTrench® MOSFET
September 2016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 12 V, VDS = 0 V
100
nA
1.5
V
20
V
15
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
VGS = 4.5 V, ID = 5.2 A
23
28
Static Drain to Source On Resistance
VGS = 2.5 V, ID = 4.4 A
32
45
VGS = 4.5 V, ID = 5.2 A,
TJ = 125°C
30
41
VDS = 5 V, ID = 5.2 A
28
rDS(on)
gFS
Forward Transconductance
0.5
0.9
-3
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
399
600
91
140
pF
pF
87
130
pF
5
10
ns
2
10
ns
15
29
ns
2
10
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VDD = 10 V, ID = 5.2 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
Total Gate Charge
VGS = 0 V to 4.5 V
Qg(TOT)
Total Gate Charge
VGS = 0 V to 2.5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 10 V,
ID = 5.2 A
4.3
6.0
nC
2.8
3.9
nC
0.7
nC
1.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5.2 A
(Note 2)
IF = 5.2 A, di/dt = 100 A/μs
0.85
1.2
V
13
27
ns
3
10
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 180 °C/W when mounted on a
minimum pad.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
4. EAS of 6 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 2 A, VDD = 20 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 7 A.
5. Pulsed Id please refer to Fig 10 SOA graph for more details.
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
2
www.fairchildsemi.com
FDN028N20 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
4.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
16
VGS = 4.5 V
12
VGS = 3 V
VGS = 2.5 V
VGS = 2 V
8
4
VGS = 1.8 V
0
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
0.0
2.0
rDS(on), DRAIN TO
1.0
0.9
0.8
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.1
12
16
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
8
TJ = 25 oC
4
TJ = 150 oC
1
2
ID = 5.2 A
40
TJ = 125 oC
TJ = 25 oC
20
2.0
2.5
3.0
3.5
4.0
20
10
VGS = 0 V
1
0.1
TJ = 25 oC
TJ = 150
0.01
TJ = -55 oC
0.001
0.0
3
oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
4.5
Figure 4. On-Resistance vs. Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
60
VGS, GATE TO SOURCE VOLTAGE (V)
16
ID, DRAIN CURRENT (A)
8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1.5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
0
4
80
ID = 5.2 A
VGS = 4.5 V
1.2
0
0
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.3
12
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
1.5
0.7
-75
VGS = 4.5 V
VGS = 3 V
VGS = 2.5 V
1.5
Figure 1. On Region Characteristics
1.4
VGS = 2 V
VGS = 1.8 V
3
1.2
www.fairchildsemi.com
FDN028N20 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
1000
ID = 5.2 A
Ciss
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = 8 V
VDD = 12 V
1.5
0.0
0
1
2
3
4
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
5
1
100
TJ =
4
TJ = 125 oC
3
25 oC
TJ = 100 oC
2
THIS AREA IS
LIMITED BY rDS(on)
0.01
0.1
1
100 μs
1
0.1
0.01
0.01
10
10 μs
10
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 180 oC/W
1
0.001
20
Figure 8. Capacitance vs. Drain
to Source Voltage
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
Figure 7. Gate Charge Characteristics
10
9
8
7
6
5
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
CURVE BENT TO
MEASURED DATA
TA = 25 oC
0.1
tAV, TIME IN AVALANCHE (ms)
1s
10 s
DC
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
Figure 9. Unclamped Inductive
Switching Capability
1000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
o
RθJA = 180 C/W
o
100
TA = 25 C
10
1
0.1
-5
10
-4
10
-3
10
-2
-1
10
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
4
www.fairchildsemi.com
FDN028N20 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
0.001
0.0001
-5
10
SINGLE PULSE
-4
10
ZθJA(t) = r(t) x RθJA
RθJA = 180 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
-3
10
-2
-1
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDN028N20 Rev.1.0
5
www.fairchildsemi.com
FDN028N20 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
2.92±0.12
0.95
A
3
1.40
B
1.40±0.12
1
2.20
2
0.508
0.382
(0.29)
0.10
0.95
M
1.00
A B
1.90
1.90
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.12 MAX
0.10
0.00
(0.94)
0.10
C
M
C
2.51±0.20
GAGE PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
0.178
0.102
0.20
0.43
0.33
(0.56)
SCALE: 50:1
SEATING
PLANE
A) NO JEDEC REFERENCE AS OF AUGUST 2003
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 2009.
E) DRAWING FILE NAME: MKT-MA03BREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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