FDP150N10A_F102

FDP150N10A N-Channel PowerTrench® MOSFET 100 V, 50 A, 15 mΩ Features Description • RDS(on) = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 16.2 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Motor Drives and Uninterruptible Power Supplies • RoHS Compliant • Micro Solar Inverter D GD S G TO-220 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) ±20 V A 36 (Note 1) 200 A (Note 2) 84.6 mJ (Note 3) 6.0 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V 50 - Continuous (TC = 100oC) - Pulsed FDP150N10A_F102 100 - Derate Above 25oC 91 W 0.61 W/oC -55 to +175 oC 300 oC FDP150N10A_F102 Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 1.6 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 1 oC/W www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET November 2013 Part Number FDP150N10A_F102 Top Mark FDP150N10A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.08 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V o ID = 250 μA, Referenced to 25 C VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 2.0 - 4.0 V - 12.5 15.0 mΩ - 40 - S - 1080 1440 pF - 267 355 pF - 11 - pF - 436 - pF - 16.2 21.0 nC - 5.3 - nC - 2.6 - nC - 3.7 - nC - 1.3 - Ω - 13 36 ns - 16 42 ns - 21 52 ns - 5 20 ns μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 50 A VDS = 10 V, ID = 50 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 0 V VDS = 50 V , VGS = 10 V, ID = 50 A (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50 V, ID = 50 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 50 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 200 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 50 A - - 1.3 V trr Reverse Recovery Time - 50 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 50 V, ISD = 50 A, dIF/dt = 100 A/μs - 55 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 2 mH, IAS = 9.2 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 2 www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 400 10 o 175 C o 25 C o -55 C 10 *Notes: 1. 250μs Pulse Test o 4 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 400 30 20 VGS = 10V 10 VGS = 20V 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o 0 *Note: TC = 25 C 0 50 100 150 ID, Drain Current [A] 1 0.0 200 Figure 5. Capacitance Characteristics 1.5 10 VGS, Gate-Source Voltage [V] Ciss 1000 Capacitances [pF] 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 3000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 40 RDS(ON) [mΩ], Drain-Source On-Resistance 2 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 Crss 8 6 4 2 0 100 3 VDS = 20V VDS = 50V VDS = 80V *Note: ID = 50A 0 5 10 15 Qg, Total Gate Charge [nC] 20 www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.08 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.0 *Notes: 1. VGS = 10V 2. ID = 50A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 300 60 100 VGS = 10V 10μs 50 100μs ID, Drain Current [A] ID, Drain Current [A] 1.5 0.5 -100 200 Figure 9. Maximum Safe Operating Area 10 1ms Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: 0.1 o 1. TC = 25 C 0.01 0.1 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 30 20 o RθJC = 1.6 C/W 0 25 100 200 Figure 11. Eoss vs. Drain to Source Voltage IAS, AVALANCHE CURRENT (A) 20 1.2 0.9 0.6 0.3 0 25 50 75 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 1.5 0.0 40 10 o EOSS, [μJ] 2.0 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 100 4 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP150N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve ZθJC(t), Thermal Response [oC/W] Thermal Response [ZθJC] 2 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 o 1. ZθJC(t) = 1.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 t2 *Notes: 0.01 -4 10 -3 -2 10 10 Rectangular Pulse Duration t1, Rectangular Pulse Duration[sec] [sec] 5 -1 10 1 www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 6 www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 7 www.fairchildsemi.com FDP150N10A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3 ©2011 Fairchild Semiconductor Corporation FDP150N10A Rev. C1 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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