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FDP045N10A / FDI045N10A
N 沟道 PowerTrench® MOSFET
100 V、 164 A、 4.5 m
特性
说明
• RDS(on) = 3.8 m ( Typ.)@VGS = 10 V, ID = 100 A
此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench® 工
艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓
越开关性能而定制的。
• 快速开关速度
• 低栅极电荷， QG=54 nC （典型值）
• 高性能沟道技术可实现极低的 RDS(on)
应用
• 高功率和高电流处理能力
• 用于 ATX/ 服务器 / 电信 PSU 的同步整流
• 符合 RoHS 标准
• 电池保护电路
• 电机驱动和不间断电源
• 微型光伏逆变器
D
GD
S
G
G
DS
TO-220
I2-PAK
S
MOSFET 最大额定值 TC =25°C 除非另有说明。
VDSS
漏极－源极电压
FDP045N10A_F102
FDI045N10A_F102
100
VGSS
栅极－源极电压
±20
符号
参数
- 连续 （TC=25°C，硅限制）
漏极电流
ID
IDM
漏极电流
EAS
单脉冲雪崩能量
dv/dt
二极管恢复 dv/dt 峰值
- 连续 （TC = 100°C，硅限制）
116
120
V
A
（说明 1）
656
A
（说明 2）
637
mJ
6.0
V/ns
（说明 3）
(TC = 25°C)
263
W
- 降低至 25°C 以上
1.75
W/°C
-55 至 +175
°C
300
°C
FDP045N10A_F102
FDI045N10A_F102
单位
PD
功耗
TJ, TSTG
工作和存储温度范围
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
TL
V
164*
- 连续 （TC=25°C，封装限制）
- 脉冲
单位
* 计算连续电流（基于最高允许结温）。封装限制电流为 120 A。
热性能
符号
参数
RJC
结至外壳热阻最大值
0.57
RJA
结至环境热阻最大值
62.5
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
1
°C/W
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
2014 年 2 月
器件编号
FDP045N10A_F102
顶标
FDP045N10A
封装
TO-220
包装方法
塑料管
卷尺寸
N/A
带宽
N/A
数量
50 个
FDI045N10A_F102
FDI045N10A
I2-PAK
塑料管
N/A
N/A
50 个
电气特性 TC =25°C 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
100
-
-
V
-
0.07
-
V/°C
A
关断特性
BVDSS
BVDSS
/ TJ
漏极－源极击穿电压
ID = 250 A, VGS = 0 V
击穿电压温度系数
ID=250 A，参考温度为 25°C
IDSS
零栅极电压漏极电流
IGSS
VDS = 80 V, VGS = 0 V
-
-
1
VDS = 80 V, TC = 150°C
-
-
500
栅极 - 体漏电流
VGS = ±20 V, VDS = 0 V
-
-
±100
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
2.0
-
4.0
V
漏极至源极静态导通电阻
-
3.8
4.5
m
gFS
正向跨导
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
-
132
-
S
nA
导通特性
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Coss(er)
VDS = 50 V, VGS = 0 V
f = 1 MHz
-
3960
5270
pF
-
925
1230
pF
-
34
-
pF
能量相关输出电容
VDS = 50 V, VGS = 0 V
-
1520
-
pF
Qg(tot)
10 V 的栅极电荷总量
-
54
74
nC
Qgs
栅极 - 源极栅极电荷
VGS = 10 V, VDS = 50 V,
ID = 100 A
nC
Qgs2
栅极平台电荷阈值
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
ESR
等效串联电阻 (G-S)
（说明 4）
f = 1 MHz
-
17
-
-
8
-
nC
-
13
-
nC
-
1.9
-
-
23
56
ns
-
26
62
ns
-
50
110
ns
-
15
40
ns
开关特性
td(on)
导通延迟时间
tr
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 50 V, ID = 100 A,
VGS = 10 V, RG = 4.7
（说明 4）
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
-
-
164*
A
ISM
漏极 - 源极二极管最大正向脉冲电流
-
-
656
A
VSD
漏极 - 源极二极管正向电压
VGS = 0 V, ISD = 100 A
-
-
1.3
V
trr
反向恢复时间
-
75
-
ns
Qrr
反向恢复电荷
VGS = 0 V, VDD = 50 V, ISD = 100 A,
dIF/dt = 100 A/s
-
120
-
nC
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 3 mH， IAS = 20.6 A， RG = 25 ，开始 TJ = 25°C。
3. ISD 100 A， di/dt 200 A/s， VDD BVDSS，开始 TJ=25°C。
4. 本质上独立于工作温度的典型特性。
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
2
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
封装标识与定购信息
图 1. 导通区域特性
图 2. 传输特性
500
500
*Notes:
1. VDS = 10V
2. 250s Pulse Test
100
100
ID, Drain Current[A]
ID, Drain Current[A]
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
o
o
175 C
25 C
10
o
-55 C
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
10
0.1
1
1
VDS, Drain-Source Voltage[V]
2
1
图 3. 导通电阻变化与漏极电流
和栅极电压的关系
6
图 4. 体二极管正向电压变化与源极电流
和温度的关系
500
IS, Reverse Drain Current [A]
4.5
RDS(ON) [m],
Drain-Source On-Resistance
2
3
4
5
VGS, Gate-Source Voltage[V]
VGS = 10V
4.0
VGS = 20V
3.5
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
3.0
0
100
200
300
ID, Drain Current [A]
1
0.0
400
图 5. 电容特性
2. 250s Pulse Test
0.3
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
图 6. 栅极电荷特性
10000
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
1000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
100
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
VDS = 20V
VDS = 50V
VDS = 80V
8
6
4
2
*Note: ID = 100A
0
1
10
VDS, Drain-Source Voltage [V]
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
100
0
3
10
20
30
40
50
Qg, Total Gate Charge [nC]
60
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
典型性能特征
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250A
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
*Notes:
1. VGS = 10V
2. ID = 100A
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
100
10
VGS = 10V
30s
150
100s
125
ID, Drain Current [A]
ID, Drain Current [A]
0.5
175
1ms
Operation in This Area
is Limited by R DS(on)
10ms
*Notes:
o
DC
1. TC = 25 C
2. TJ = 175 C
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
100
75
50
25
o
o
RJC = 0.57 C/W
0
25
100 200
图 11. Eoss 与漏源极电压
50
75
100
125
150
o
TC, Case Temperature [ C]
175
图 12. 非箝位感性开关能力
5
IAS, Avalanche Current [A]
50
4
EOSS, [J]
1.0
图 10. 最大漏极电流与壳温的关系
1000
0.1
0.1
1.5
0.0
-100
200
图 9. 最大安全工作区
1
2.0
3
2
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
o
STARTING TJ = 25 C
10
o
STARTING TJ = 150 C
1
0
0
25
50
75
VDS, Drain to Source Voltage [V]
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
1
0.01
100
4
0.1
1
10
100
tAV, Time In Avalanche [ms]
1000
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
典型性能特性 （接上页）
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
典型性能特性 （接上页）
图 13. 瞬态热响应曲线
ZJC(t)，热响应 [oC/W]
Thermal Response [ZJC]
1
0.5
0.1
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
*Notes:
o
1. ZJC(t) = 0.57 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.001
-5
10
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
-4
10
-3
-2
10
10
Rectangular
Pulse
[sec]
t1，
矩形脉冲持续时间
[ 秒Duration
]
5
-1
10
1
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
IG= 常量
图 14. 栅极电荷测试电路与波形
VDS
RL
VDS
90%
VDD
VGS
RG
V
10V
GS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 15. 阻性开关测试电路与波形
VGS
图 16. 非箝位电感开关测试电路与波形
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
6
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 17. 二极管恢复 dv/dt 峰值测试电路与波形
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
7
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
机械尺寸
图 18. TO-220 模塑 3 引线 Jedec 变体 AB (Delta)
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
8
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
机械尺寸
图 19. TO262 (I2PAK) 模塑 3 引脚 Jedec 变体 AA
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-0I3
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
9
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 飞兆半导体公司
FDP045N10A / FDI045N10A Rev. C1
10
www.fairchildsemi.com
FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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